Abstract: An anti-reflective film includes a polarizing film and a compensation film, where the polarizing film includes a polymer, and a plurality of dichroic dyes having an absorption wavelength region in a range from about 380 nanometers to about 780 nanometers, and a reflective color of the anti-reflective film is substantially in a range of ?5?a*?5 and ?5?b*?5 in CIE-Lab color coordinates.

Abstract: Disclosed are a polarizing film including a polyolefin and a dichroic dye having a solubility parameter difference between the polyolefin and the dichroic dye is less than 7.4, and a display device including the polarizing film.

Abstract: A composition for a polarizing film including a polyolefin and a dichroic dye represented by Chemical Formula 1: wherein, in Chemical Formula 1, Ar1 to Ar3, R1, R2, and n are defined in the detailed description.

Abstract: A display apparatus and a control method thereof are disclosed. The display apparatus includes a signal processor which processes a video signal; a display which displays an image based on the video signal processed by the signal processor, a light source providing light for displaying the image; and a driving circuit which drives the light source on the basis of a dimming signal having an on-section and an off-section for dimming the light source. The driving circuit includes a protection circuit for performing a protection operation as a result of an abnormal electric current flowing in the light source during the off-section. The display apparatus is protected when a short circuit occurs between the light source and the driving circuit, thereby enhancing the stability and reliability of the apparatus.

Abstract: Disclosed are a polarizing film including a polyolefin and a dichroic dye having a solubility parameter difference between the polyolefin and the dichroic dye is less than 7.4, and a display device including the polarizing film.

Abstract: A composition for a polarizing film including a polyolefin and a dichroic dye represented by Chemical Formula 1: wherein, in Chemical Formula 1, Ar1 to Ar3, R1, R2, and n are defined in the detailed description.

Abstract: A composition for a polarization film including: a transparent resin having a boiling point of greater than or equal to 130° C.

Abstract: A polarization film, including: a hydrophobic polymer resin and a dichroic dye represented by Chemical Formula 1: wherein in Chemical Formula 1, wherein, in Chemical Formula 1, Ar1 is a substituted or unsubstituted C6 to C15 arylene group, Ar2 is a C6 to C15 arylene group substituted with at least one of a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C1 to C20 alkoxy group, a halogen atom and a halogen-containing group, Ar3 is a C6 to C15 arylene group substituted with an amide group, R1 is a substituted or unsubstituted C1 to C20 alkyl group or a substituted or unsubstituted C1 to C20 alkoxy group, R2 and R3 are each independently a substituted or unsubstituted C1 to C20 alkyl group, or R2 and R3 are linked to each other to form a ring, and n is 1 or 2.

Abstract: Disclosed are a polarizing film including a polyolefin and a dichroic dye having a solubility parameter difference between the polyolefin and the dichroic dye is less than 7.4, and a display device including the polarizing film.

Abstract: An anti-reflective film includes a polarizing film and a compensation film, where the polarizing film includes a polymer, and a plurality of dichroic dyes having an absorption wavelength region in a range from about 380 nanometers to about 780 nanometers, and a reflective color of the anti-reflective film is substantially in a range of ?5?a*?5 and ?5?b?*5 in CIE-Lab color coordinates.

Abstract: Disclosed are a polarizing film including a polyolefin and a dichroic dye having a solubility parameter difference between the polyolefin and the dichroic dye is less than 7.4, and a display device including the polarizing film.

Abstract: Provided are methods of forming semiconductor devices. A method may include preparing a semiconductor substrate including a first region and a second region adjacent the first region. The method may also include forming sacrificial pattern covering the second region and exposing the first region. The method may further include forming a capping layer including a faceted sidewall on the first region using selective epitaxial growth (SEG). The faceted sidewall may be separate from the sacrificial pattern. The sacrificial pattern may be removed. Impurity ions may be implanted into the semiconductor substrate.