Abstract: The present disclosure relates to a method for recovering ammonia, the method comprising (a) preparing a gas containing ammonia,(b) supplying the gas containing ammonia to a mixed solution of an aqueous solution of sulfuric acid and a antisolvent of ammonium sulfate, to obtain ammonium sulfate crystals, and (c) separating the ammonium sulfate crystals from the mixed solution, wherein a volume ratio of the antisolvent of ammonium sulfate to the aqueous solution of sulfuric acid is greater than 1.

Abstract: Disclosed herein is a method of preparing an antithrombotic agent from muskrat musk and an antithrombotic agent having a high potency obtained therefrom, wherein the antithrombotic agent is prepared by treating muskrat musk with ethanol to obtain an ethanol extract; carrying out two normal phase column chromatographies while raising the combination ratio of hexane and ethyl acetate to obtain numerous fractions; carrying out thin layer chromatographies and identifying the material patterns of the fractions with UV lamps and 10% sulfuric acid to divide the materials which have a similar moving distance into groups; measuring a thrombin time of each group to isolate a group having a potent antithrombotic activity; carrying out a reverse phase column chromatography while raising the combination ratio of acetonitrile and water to obtain numerous fractions; and isolating an antithrombotic agent material having a high potency therefrom.

Abstract: A non-volatile memory device including a cell array region formed having a plurality of parallel bit lines, a plurality of parallel word lines, a plurality of memory cells, and a plurality of common source lines, the plurality of bit lines being orthogonal to the plurality of word lines, each of the memory cells being connected to a bit line and a word line and having a stacked gate comprised of a floating gate and a control gate and a source/drain region, the plurality of common source lines being parallel to the plurality of bit lines. The non-volatile memory device also includes a peripheral circuit region for driving the memory cells in the cell array region is formed. The cell array region includes one or more bulk bias contact structures for maintaining the voltage of a bulk region in which the cell array region is formed, at or below a predetermined voltage.

Abstract: A method for manufacturing a nonvolatile memory device is provided. After forming an etching damage prevention layer on the entire surface of a stacked gate structure and on the entire surface of a semiconductor substrate, a self-aligned source etching process is performed. Thus, damage to side walls of the stacked gate structure and an active region can be prevented during the self-aligned source etching process.