Patents by Inventor Yong Ju Yun

Yong Ju Yun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130075326
    Abstract: Provided are a filter fabrication method and the filter formed thereby. In this method, a three-dimensional graphene polymer complex filter can be easily fabricated. By forming various patterns at a surface of a collector, patterns can be simply formed at a surface of a filter. This provides advantages at control of pressure difference which can be one of the very important factors necessary for designing and fabricating a filter. Since the filter includes graphene particles homogeneously combined to the polymer nanofiber, the filter can represent a superior antibiosis.
    Type: Application
    Filed: September 13, 2012
    Publication date: March 28, 2013
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Yong Ju YUN, Han Young Yu, Yark Yeon Kim, Won Ick Jang
  • Publication number: 20130042911
    Abstract: Provided are a solar cell and a method of fabricating the same. The solar cell may include a first electrode including a first substrate attached with a first transparent conductive film and a metal oxide nanotube provided on the first substrate and adsorbed with a dye, a second electrode facing the first electrode, and an electrolyte filling between the first and second electrodes. In example embodiments, metal nanoparticles may be provided on an inner surface of the metal oxide nanotube.
    Type: Application
    Filed: July 16, 2012
    Publication date: February 21, 2013
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Mi Hee JUNG, Moo Jung Chu, Yong Ju YUN, Mangu KANG
  • Patent number: 8283654
    Abstract: Provided is a nanowire memory including a source and a drain corresponding to the source, and a nano channel formed to connect the source to the drain. Here, the nano channel includes a nanowire electrically connecting the source to the drain according to voltages of the source and drain, and a nanodot formed on the nanowire and having a plurality of potentials capturing charges. Thus, the nanowire memory has a simple structure, thereby simplifying a process. It can generate multi current levels by adjusting several energy states using gates, operate as a volatile or non-volatile memory by adjusting the gates and the energy level, and include another gate configured to adjust the energy level, resulting in formation of a hybrid structure of volatile and non-volatile memories.
    Type: Grant
    Filed: November 19, 2009
    Date of Patent: October 9, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Han Young Yu, Byung Hoon Kim, Soon Young Oh, Yong Ju Yun, Yark Yeon Kim, Won Gi Hong
  • Publication number: 20120143121
    Abstract: Provided is a chitosan spreading system using low temperature atmospheric pressure plasma.
    Type: Application
    Filed: November 22, 2011
    Publication date: June 7, 2012
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Yark Yeon Kim, Han Young Yu, Yong Ju Yun, Won Ick Jang
  • Publication number: 20120129682
    Abstract: Provided is a method of fabricating of a nanowire porous medium and a medium formed by the method. In this method, water and organic solvent are mixed and stirred to form a large amount of bubbles, and the bubbles are used such that porosity can be formed more easily and in a more amount. Therefore, the nanowire porous medium can be fabricated more easily and simply. Also, in the nanowire porous medium according to the inventive concept, absorption capacity is increased by containing nanowires, and flexibility and durability are increased by containing a polymer.
    Type: Application
    Filed: November 3, 2011
    Publication date: May 24, 2012
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Yong Ju YUN, Han Young YU, Yark Yeon KIM, Won Ick JANG
  • Publication number: 20120125768
    Abstract: Provided is a dissolved oxygen measurement system. The dissolved oxygen measurement system includes a hydrogen storage device storing hydrogen, a first hydrogen fuel cell in which the hydrogen stored in the hydrogen storage device and water supplied from the outside in real time react with each other to generate first electricity energy, a water storage tank storing the water supplied from the outside, a second hydrogen fuel cell in which the water supplied from the water storage tank and the hydrogen stored in the hydrogen storage device react with each other to generate second electricity energy, and a control unit analyzing a difference between the first electricity energy and the second electricity energy.
    Type: Application
    Filed: August 26, 2011
    Publication date: May 24, 2012
    Applicant: Electronic and Telecommunications Research Institute
    Inventors: Han Young YU, Yark Yeon Kim, Yong Ju Yun, Won Ick Jang
  • Patent number: 8047361
    Abstract: Provided are a gas storage structure and a gas storage apparatus including the gas storage structure. The gas storage structure includes a gas storage part including an opening thereon and an entrance control part disposed on the opening and including a gate.
    Type: Grant
    Filed: May 8, 2009
    Date of Patent: November 1, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Han-Young Yu, Byung-Hoon Kim, Soon-Young Oh, Yong-Ju Yun
  • Publication number: 20110008247
    Abstract: Provided is a gas storage method of a gas storage medium having a multilayer structure in which crystalline structures are stacked to be spaced from each other, including selectively storing gas by relatively controlling a space between the crystalline structures or a lattice distance between crystals of each crystalline structure with respect to the van der Waals diameter of gas which is to be stored. According to the gas storage method, it is possible to selectively store gas.
    Type: Application
    Filed: February 2, 2010
    Publication date: January 13, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Yong Ju YUN, Han Young Yu, Byung Hoon Kim, Soon Young Oh, Won Gi Hong, Yark Yeon Kim, Chang Hee Kim
  • Publication number: 20100314609
    Abstract: Provided is a nanowire memory including a source and a drain corresponding to the source, and a nano channel formed to connect the source to the drain. Here, the nano channel includes a nanowire electrically connecting the source to the drain according to voltages of the source and drain, and a nanodot formed on the nanowire and having a plurality of potentials capturing charges. Thus, the nanowire memory has a simple structure, thereby simplifying a process. It can generate multi current levels by adjusting several energy states using gates, operate as a volatile or non-volatile memory by adjusting the gates and the energy level, and include another gate configured to adjust the energy level, resulting in formation of a hybrid structure of volatile and non-volatile memories.
    Type: Application
    Filed: November 19, 2009
    Publication date: December 16, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Han Young YU, Byung Hoon Kim, Soon Young Oh, Yong Ju Yun, Yark Yeon Kim, Won Gi Hong
  • Publication number: 20100155264
    Abstract: Provided are a gas storage structure and a gas storage apparatus including the gas storage structure. The gas storage structure includes a gas storage part including an opening thereon and an entrance control part disposed on the opening and including a gate.
    Type: Application
    Filed: May 8, 2009
    Publication date: June 24, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Han-Young YU, Byung-Hoon Kim, Soon-Young Oh, Yong-Ju Yun
  • Publication number: 20100098966
    Abstract: The present invention relates to a process of preparing a nanogap electrode and a nanogap device using the same, and a preparing process according to the present invention is characterized in that reduced metal is grown by reduction reaction from a metal ion in solution on the surface of a metal pattern with a predetermined shape. A method of preparing a nanogap electrode according to the present invention has an advantage that nanogap electrodes having a gap distance of 1-100 nm, which are difficult to prepare by a conventional method, can be easily prepared in a reproducible and uniform manner.
    Type: Application
    Filed: August 3, 2006
    Publication date: April 22, 2010
    Inventors: Chil Seong Ah, Yong Ju Yun, Jun Sung Lee, Hyung Ju Park, Dong Han Ha, Wan Soo Yun
  • Publication number: 20090221086
    Abstract: The present invention relates to an apparatus and a method for detecting the presence of a particular organic, inorganic, metallic, natural or synthetic biomaterial and the concentration thereof. More particularly, the present invention relates to an apparatus and a method for detecting the identity, presence or absence, and concentration of a material to be detected, by which the metal ions of the detection solution are reduced to metals by a material to be detected and are deposited as metallic nanoparticles, resulting in the change of the shape, size or pattern of the metallic nanoparticles, and the change in light transmittance caused thereby is measured to detect the presence or absence of the material and the concentration thereof.
    Type: Application
    Filed: October 27, 2008
    Publication date: September 3, 2009
    Inventors: Dong Han Ha, Yong Ju Yun, Sanghun Kim, Hyung Ju Park, Wan Soo Yun, Yong Jai Cho
  • Patent number: 7557044
    Abstract: Disclosed herein is a method of fabricating nano-components using nanoplates, including the steps of: printing a grid on a substrate using photolithography and Electron Beam Lithography; spraying an aqueous solution dispersed with nanoplates onto the grid portion to position the nanoplates on the substrate; depositing a protective film of a predetermined thickness on the substrate and the nanoplates positioned on the substrate; ion-etching the nanoplates deposited with the protective film by using a Focused Ion Beam (FIB) or Electron Beam Lithography; and eliminating the protective film remaining on the substrate using a protective film remover after the ion-etching of the nanoplates, and a method of manufacturing nanomachines or nanostructures by transporting such nano-components using a nano probe and assembling with other nano-components.
    Type: Grant
    Filed: October 31, 2005
    Date of Patent: July 7, 2009
    Assignee: Korean Research Institute of Standards and Science
    Inventors: Yong Ju Yun, Chil Seong Ah, Dong Han Ha, Hyung Ju Park, Wan Soo Yun, Kwang Cheol Lee, Gwang Seo Park