Abstract: A semiconductor device is provided, which includes an active region, a first structure, a second gate structure, a first gate dielectric sidewall, a second gate dielectric sidewall, a first air gap region, a second air gap region and a contact structure. The active region is formed over a substrate. The first and second gate structures are formed over the active region and between the first gate structure and the second gate structure are the first gate dielectric sidewall, the first air gap region, the contact structure, the second air gap region and a second gate dielectric sidewall.

Abstract: The disclosure provides an online test data record and offline data conversion analysis system and a method thereof. In the present disclosure, the test process information of the production line testing system performed on the circuit board to be tested is generated into online test result data in a database file format, and the offline analysis system receives the online test data from the production line testing system. The offline analysis system reads the corresponding data in the online test result data according to the designated data in the data designated instruction, and generates the offline test result data in the designated file format of the data designated instruction, and the offline analysis system perform the data analysis for the offline test result according to the analysis instruction.

Abstract: A system and method for generating configuration files and performing test by using the configuration files are disclosed. The configuration generation system configures the identification code corresponding to each testing mode as a comparison table, and configures at least one set of identification codes corresponding to each testing collection and the execution configuration of the identification code to generate the configuration files, and the production line testing system parses the test script to obtain the testing mode and the execution configuration of the testing mode according to the identification comparison table and the configuration files, so as to execute the test. The test program is convenient by providing the configuration files.

Abstract: A semiconductor device is provided, which includes an active region, a first structure, a second gate structure, a first gate dielectric sidewall, a second gate dielectric sidewall, a first air gap region, a second air gap region and a contact structure. The active region is formed over a substrate. The first and second gate structures are formed over the active region and between the first gate structure and the second gate structure are the first gate dielectric sidewall, the first air gap region, the contact structure, the second air gap region and a second gate dielectric sidewall.

Abstract: One illustrative FinFET device disclosed herein includes a source/drain structure that, when viewed in a cross-section taken through the fin in a direction corresponding to the gate width (GW) direction of the device, comprises a perimeter and a bottom surface. The source/drain structure also has an axial length that extends in a direction corresponding to the gate length (GL) direction of the device. The device also includes a metal silicide material positioned on at least a portion of the perimeter of the source/drain structure for at least a portion of the axial length of the source/drain structure and on at least a portion of the bottom surface of the source/drain structure for at least a portion of the axial length of the source/drain structure.

Abstract: One illustrative FinFET device disclosed herein includes a source/drain structure that, when viewed in a cross-section taken through the fin in a direction corresponding to the gate width (GW) direction of the device, comprises a perimeter and a bottom surface. The source/drain structure also has an axial length that extends in a direction corresponding to the gate length (GL) direction of the device. The device also includes a metal silicide material positioned on at least a portion of the perimeter of the source/drain structure for at least a portion of the axial length of the source/drain structure and on at least a portion of the bottom surface of the source/drain structure for at least a portion of the axial length of the source/drain structure.

Abstract: A disk-cloning method and system is provided for cloning computer data from a source disk to a target disk. This disk-cloning method and system can be utilized, for example, in the computer assembly line to clone a preselected set of software programs to the main hard disk of each computer unit, or as a backup to a hard disk. This disk-cloning method and system is characterized in that the source data are read from the source disk and written onto the target disk in a sector-by-sector manner rather than in a file-by-file manner as the prior art. This feature allows the cloning procedure to be more efficiently carried out than the prior art. Moreover, it allows the disk-cloning procedure to be performed without having to make modifications to the existing FDT (File Directory Table) and FAT (File Allocation Table) on the target disk, thus ensuring the system security of the target disk. This disk-cloning method and system is therefore more reliable and efficient to use than the prior art.

Abstract: A method of forming a collateral alliance between Windows 9X system and Windows NT 4.0 system suitable for writing the image data of a seed hard drive to a target hard drive. The method includes writing image data into the target hard drive and then finding a boot file that registers the hard drive parameters in the target hard drive. An error signal is issued and the transaction is terminated when the boot file is not found. If the boot file is found, hard drive parameters of the hard drive is retrieved and written into the boot file.