Abstract: An infrared touch screen in of a quadrilateral shape is disclosed. The infrared touch screen is provided with a plurality of light sources at its first side and provided with a plurality of first detecting units at its second side opposite to the first side, and is provided with a plurality of second detecting units respectively at its third side and its fourth side which are opposite to each other, and the first detecting units and the second detecting unit are all configured to partly receive and partly reflect the infrared light emitted by the light sources, so that the infrared light emitted by the light sources can form criss-crossing light paths. The infrared touch screen achieves lowered power consumption and improved touch performance.

Abstract: A color filter substrate and a manufacturing method thereof, and a display panel are provided. The color filter substrate includes; a first base substrate; a black matrix, disposed on the first base substrate; and a plurality of spacers, disposed on the black matrix, wherein at least part of the spacers and the black matrix are provided with a pillow layer. In the embodiments of the present invention, by forming the pillow layer on the black matrix, and providing the spacer on the pillow layer, a compression amount of the spacer is increased, a risk of occurrence of gravity Mura is reduced, and picture display quality and reliability of a display device are improved; and a thickness of the pillow layer can be changed continuously.

Abstract: The present invention discloses a thin film transistor and a method for manufacturing the same, an array substrate and a display device. The performance of the thin film transistor can be improved and thereby the image quality can be improved by an increase in the width of the conducting area of a thin film transistor without change of the capacitance of the source electrode. The thin film transistor comprises a substrate, a gate electrode, a source electrode, at least two drain electrodes, a semiconductor layer, a gate electrode protection layer located between the gate electrode and the semiconductor layer and an etch stopping layer located between the semiconductor layer and the source electrode with the drain electrode, wherein the source electrode and the drain electrodes are respectively connected with the semiconductor layer by a via hole.

Abstract: The present invention discloses a thin film transistor and a method for manufacturing the same, an array substrate and a display device. The performance of the thin film transistor can be improved and thereby the image quality can be improved by an increase in the width of the conducting area of a thin film transistor without change of the capacitance of the source electrode. The thin film transistor comprises a substrate, a gate electrode, a source electrode, at least two drain electrodes, a semiconductor layer, a gate electrode protection layer located between the gate electrode and the semiconductor layer and an etch stopping layer located between the semiconductor layer and the source electrode with the drain electrode, wherein the source electrode and the drain electrodes are respectively connected with the semiconductor layer by a via hole.