Abstract: Apparatus and methods for forming a silicon-containing i-layer on a substrate for a thin film photovoltaic cell are disclosed. The apparatus includes a chamber body defining a processing region containing the substrate, a hydrogen source and a silane source coupled to a plasma generation region, an RF power source that applies power at a power level in the plasma generation region to generate a plasma and deposit the silicon-containing i-layer at a selected deposition rate to a selected thickness and a controller. The controller controls the power level and the deposition rate of the i-layer on the substrate such that the thin film solar cell exhibits light induced damage that conforms to a linear fit of the product of the RF power, the deposition rate and the selected thickness of the i-layer.