Patents by Inventor Yong Kheng Ang

Yong Kheng Ang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitor structures for semiconductor device
    Patent number: 9793338
    Abstract: A semiconductor device comprising a semiconductor substrate and a composite capacitor structure on the semiconductor substrate, wherein the composite capacitor structure comprises a capacitor stack comprising a lower and an upper capacitor, respectively comprising first and second dielectric materials, wherein the first and second dielectric materials are different materials and/or have different thicknesses from each other. This can minimize the voltage dependence of the capacitance of the composite capacitor structure. It is also possible to provide a composite capacitor structure on the semiconductor substrate, wherein the composite capacitor structure comprises at least a first and a second capacitor stack, each comprising a lower and an upper capacitor. The capacitors can be MIM capacitors.
    Type: Grant
    Filed: July 16, 2010
    Date of Patent: October 17, 2017
    Assignee: X-FAB SEMICONDUCTOR FOUNDRIES AG
    Inventors: Tsui Ping Chu, Peng Yang, Evie Siaw Hei Kho, Yong Kheng Ang, Swee Hua Tia
  • CAPACITOR STRUCTURES FOR SEMICONDUCTOR DEVICE
    Publication number: 20130140677
    Abstract: A semiconductor device comprising a semiconductor substrate and a composite capacitor structure on the semiconductor substrate, wherein the composite capacitor structure comprises a capacitor stack comprising a lower and an upper capacitor, respectively comprising first and second dielectric materials, wherein the first and second dielectric materials are different materials and/or have different thicknesses from each other. This can minimize the voltage dependence of the capacitance of the composite capacitor structure. It is also possible to provide a composite capacitor structure on the semiconductor substrate, wherein the composite capacitor structure comprises at least a first and a second capacitor stack, each comprising a lower and an upper capacitor. The capacitors can be MIM capacitors.
    Type: Application
    Filed: July 16, 2010
    Publication date: June 6, 2013
    Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AG
    Inventors: Tsui Ping Chu, Peng Yang, Evie Siaw Hei Kho, Yong Kheng Ang, Swee Hua Tia