Abstract: Disclosed herein is a thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor. The apparatus comprises: a gas supply means for supplying a plurality of gases to the inside of the reaction chamber from the outside, the gases including a reaction gas; a gas distribution means for distributing and spraying the gases supplied from the gas supply means so as to conform to the purpose of a process; a gas retaining means having a plurality of reaction cells for partitionally accommodating and retaining the respective gases distributed from the gas distribution means; a rotation driving means for rotating the gas retaining means such that the gases retained in the respective reaction cells are exposed to the substrates in sequence; and a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber.

Abstract: Disclosed herein is a thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor. The apparatus comprises: a gas supply means for supplying a plurality of gases to the inside of the reaction chamber from the outside, the gases including a reaction gas; a gas distribution means for distributing and spraying the gases supplied from the gas supply means so as to conform to the purpose of a process; a gas retaining means having a plurality of reaction cells for partitionally accommodating and retaining the respective gases distributed from the gas distribution means; a rotation driving means for rotating the gas retaining means such that the gases retained in the respective reaction cells are exposed to the substrates in sequence; and a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber.

Abstract: A semiconductor memory device including an active matrix comprising a semiconductor substrate, a transistor formed on the semiconductor substrate and isolation regions for isolating the transistor, a first metal pattern formed on top of the active matrix and extending outside the transistor, a capacitor structure formed over the transistor, a barrier layer formed on top of the capacitor structure to improve thermal stability, and a second metal pattern formed on top of the capacitor structure to electrically connect the capacitor structure to the transistor through the first and second metal patterns.

Abstract: A semiconductor memory device includes an active matrix provided with a semiconductor substrate, a transistor formed on the semiconductor substrate and isolation regions for isolating the transistor, a first metal line formed on top of the active matrix and extending outside the transistor, a capacitor structure formed over the transistor and a second metal line formed on top of the capacitor structure to electrically connect the capacitor structure to the transistor through the first and the second metal lines. In the memory device, forming the capacitor structure at the position over the transistor can reduce the cell size of the memory cell.

Abstract: A metal organic chemical vapor deposition apparatus comprising a source ampule, a liquid micro-pump, a vaporizer equipped with a solvent supply means, and a reactor. A reactant dissolved in a solvent in the source ampule is transferred to the vaporizer by the liquid micro-pump. A sufficient amount of the solvent is additionally fed to the vaporizer by the solvent supply means, concurrently with the transfer, and vaporized along with the reactants. After being vaporized in the vaporizer, the reactant is injected to the reactor by carrier gas and deposited on a semiconductor substrate to form a high dielectric thin film. By virtue of the additional supplied solvent, the recondensation of the reactant in the vaporizer, which is attributed to the separation of the solvent from the reactant, can be prevented in the vaporizer and in the transfer line between the vaporizer and the reactor.

Abstract: An apparatus for forming a ultra-thin film of a semiconductor device includes: a reactive chamber consisting of an upper container and a lower container junctioned by an O-ring; a suscepter installed inside the reactive chamber for supporting a target substrate on which a ultra-thin film is to be formed; at least two gas supply pipes for respectively supplying at least two material gases into the reactive chamber to form a ultra-thin film on the substrate; gas supply controllers respectively installed at the gas supply pipes to repeatedly supply the material gases into the chamber; a gas outlet for discharging the gas from the chamber; remote plasma generators installed outside the reactive chamber and connected to the gas supply pipes for activating the material gases supplied through the gas supply pipes; and a temperature controller for controlling the temperature inside the chamber in a heat exchange method, the temperature controller being installed to surround the chamber.

Abstract: A semiconductor memory device including an active matrix comprising a semiconductor substrate, a transistor formed on the semiconductor substrate and isolation regions for isolating the transistor, a first metal pattern formed on top of the active matrix and extending outside the transistor, a capacitor structure formed over the transistor, a barrier layer formed on top of the capacitor structure to improve thermal stability, and a second metal pattern formed on top of the capacitor structure to electrically connect the capacitor structure to the transistor through the first and second metal patterns.

Abstract: A method for fabricating a ferroelectric random access memory device, includes the steps of: forming an interlayer insulating layer on a ferroelectric capacitor and a transistor; forming a first opening through the interlayer insulating layer in order to expose a top electrode of the ferroelectric capacitor; forming the barrier metal layer on the resulting structure on which the first opening is formed, wherein the barrier metal layer is in contact with the top electrode of the ferroelectric capacitor; selectively etching the barrier metal and interlayer insulating layers and forming a second opening in order to expose a junction layer of the transistor; forming a polysilicon layer on the resulting structure and doping impurity ions into the polysilicon layer, wherein the doped polysilicon layer is in contact with the junction layer of the transistor; and selectively etching the polysilicon and barrier metal layers, thereby patterning an interconnection layer for interconnecting the transistor and the ferroel

Abstract: A metal organic chemical vapor deposition apparatus comprising a source ampule, a liquid micro-pump, a vaporizer equipped with a solvent supply means, and a reactor. A reactant dissolved in a solvent in the source ampule is transferred to the vaporizer by the liquid micro-pump. A sufficient amount of the solvent is additionally fed to the vaporizer by the solvent supply means, concurrently with the transfer, and vaporized along with the reactants. After being vaporized in the vaporizer, the reactant is injected to the reactor by carrier gas and deposited on a semiconductor substrate to form a high dielectric thin film. By virtue of the additional supplied solvent, the recondensation of the reactant in the vaporizer, which is attributed to the separation of the solvent from the reactant, can be prevented in the vaporizer and in the transfer line between the vaporizer and the reactor.

Abstract: A thin film deposition apparatus which includes a mesh type radio frequency (RF) electrode plate adapted to form plasma, a baffle guide adapted to prevent the plasma from diffusing at a low pressure, and a control unit adapted to perform control of temperature for preventing a reacting raw material from generating a degraded reaction in a gas injector, thereby enabling formation of a multi-element thin film using a multi-element reacting raw material and formation of a uniform thin film having a high density to obtain micro patterns of highly integrated semiconductor devices.

Abstract: A ferroelectric thin film superior in coatability, fineness of structure and uniformity of composition, is obtained by a method comprised of inducing ferroelectric reactant materials consisting of plural elements into dissociation by exciting plasma with RF power in order for them to participate in a deposition reaction; setting an optimal process condition in which the ions dissociated from the reactant materials by the excited plasma are subjected to deposition at high temperatures under low pressures; supplying the reactant materials through conduits, a manifold and a shower head to a reactor without deterioration, the manifold collecting the reactant materials, the shower head serving to spray the mixed reactant materials; and depositing a ferroelectric thin film in the reactor while purging residual gas from the conduits.