Patents by Inventor Yong Kuk Kim

Yong Kuk Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170029104
    Abstract: According to an embodiment of the present invention, an unmanned aerial vehicle comprises a body, a plurality of arms provided on a periphery of the body, a propeller provided on each of the plurality of arms and driven by a driving motor, and a gripper provided on a bottom of the body to grip an object. The gripper may include a supporting bar extending downward from the bottom of the body and a head provided at a lower end of the supporting bar to grip the object.
    Type: Application
    Filed: April 12, 2016
    Publication date: February 2, 2017
    Inventor: YONG KUK KIM
  • Patent number: 8828266
    Abstract: A CMP slurry composition includes metal oxide particles, a diisocyanate compound, and deionized water. The CMP slurry composition is capable of selectively controlling polishing speed of a wafer surface having a convex portion and a concave portion, such that primary polishing and secondary polishing can be performed rapidly while stopping polishing of the nitride layer upon the secondary polishing.
    Type: Grant
    Filed: December 19, 2012
    Date of Patent: September 9, 2014
    Assignee: Cheil Industries Inc.
    Inventors: Hyun Soo Roh, Dong Jin Kim, Yong Soon Park, Yong Kuk Kim, Young Chul Jung
  • Patent number: 8491682
    Abstract: Disclosed are abrasive particles, a method for manufacturing the abrasive particles, and a method for manufacturing a Chemical Mechanical Polishing (CMP) slurry. The method for manufacturing abrasive particles for the CMP slurry includes preparing a raw material precursor, drying the raw material precursor, and calcining the dried raw material precursor using a calcination furnace where a gas atmosphere having relatively less oxygen in comparison with an air atmosphere is created.
    Type: Grant
    Filed: December 27, 2008
    Date of Patent: July 23, 2013
    Assignee: K.C. Tech Co., Ltd.
    Inventors: Suk Min Hong, Myung Won Suh, Yong Kuk Kim, Joon Ha Hwang, Jeong Yun Kim, Dong Hyun Kim
  • Patent number: 8361177
    Abstract: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.
    Type: Grant
    Filed: December 11, 2008
    Date of Patent: January 29, 2013
    Assignees: K.C. Tech Co., Ltd., IUCF-HYU
    Inventors: Dae Hyeong Kim, Seok Min Hong, Jae Hyun Jeon, Un Gyu Park, Jea Gun Park, Yong Kuk Kim
  • Publication number: 20090193721
    Abstract: Disclosed are abrasive particles, a method for manufacturing the abrasive particles, and a method for manufacturing a Chemical Mechanical Polishing (CMP) slurry. The method for manufacturing abrasive particles for the CMP slurry includes preparing a raw material precursor, drying the raw material precursor, and calcining the dried raw material precursor using a calcination furnace where a gas atmosphere having relatively less oxygen in comparison with an air atmosphere is created.
    Type: Application
    Filed: December 27, 2008
    Publication date: August 6, 2009
    Applicant: K.C. Tech Co., LTD.
    Inventors: Suk Min HONG, Myung Won SUH, Yong Kuk KIM, Joon Ha HWANG, Jeong Yun KIM, Dong Hyun KIM
  • Publication number: 20090133336
    Abstract: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.
    Type: Application
    Filed: December 11, 2008
    Publication date: May 28, 2009
    Applicants: K.C. TECH CO., LTD., IUCF-HYU
    Inventors: Dae Hyeong Kim, Seok Min Hong, Jae Hyun Jeon, Un Gyu Paik, Jea Gun Park, Yong Kuk Kim
  • Publication number: 20090100765
    Abstract: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.
    Type: Application
    Filed: December 11, 2008
    Publication date: April 23, 2009
    Applicants: K.C. TECH CO., LTD., IUCF-HYU
    Inventors: Dae Hyeong Kim, Seok Min Hong, Jae Hyun Jeon, Un Gyu Paik, Jea Gun Park, Yong Kuk Kim
  • Patent number: 7470295
    Abstract: Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.
    Type: Grant
    Filed: March 11, 2005
    Date of Patent: December 30, 2008
    Assignees: K.C. Tech Co., Ltd., IUCF-HYU
    Inventors: Dae Hyung Kim, Seok Min Hong, Jae Hyun Jeon, Ho Seong Kim, Hyun Soo Park, Un Gyu Paik, Jae Gun Park, Yong Kuk Kim
  • Patent number: 7364600
    Abstract: Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 ?m or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 ?m or less, particularly, the STI process.
    Type: Grant
    Filed: May 11, 2005
    Date of Patent: April 29, 2008
    Assignees: K.C. Tech Co., Ltd., IUCF-HYU
    Inventors: Dae Hyeong Kim, Seok Min Hong, Jae Hyun Jeon, Ho Seong Kim, Hyun Soo Park, Un Gyu Paik, Jae Gun Park, Yong Kuk Kim
  • Publication number: 20060056955
    Abstract: A sawing and sorting system combines a sawing apparatus and a sorting apparatus. The sawing and sorting system comprises a loader. The loader comprises a magazine receiving a plurality of strips. A mounting unit mounts the strip thereon. A plurality of transfer and sawing robots each comprises a picker unit. The picker unit comprises a rotatable chuck table. The transfer and sawing robot transfers the picker unit horizontally and vertically. The rotatable chuck table holds the strip. The picker unit rotates the rotatable chuck table. A plurality of sawing spindle units each comprises a rotary blade. The sawing spindle unit moves the blade horizontally to divide the strip into unit packages. A cleaning unit cleans the unit package. A test means inspects the unit package according to a test criteria. A sorting table mounts the unit package for sorting. An unloader provides trays. A sorting transfer robot sorts the unit packages into the trays.
    Type: Application
    Filed: September 6, 2005
    Publication date: March 16, 2006
    Inventors: Yong-Kuk Kim, Hyun-Ho Kim, Ho-Seong Kim, Yong-Kyun Sun, Tai-Kew Choi