Patents by Inventor Yong-Kyeong Kim

Yong-Kyeong Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MEMORY SYSTEM THAT DETECTS BIT ERRORS DUE TO READ DISTURBANCE AND METHODS THEREOF
    Publication number: 20160307610
    Abstract: Methods and memory systems are provided that can detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.
    Type: Application
    Filed: October 23, 2012
    Publication date: October 20, 2016
    Inventors: Se-Jin Ahn, Yong-Hyeon Kim, Sung-Up Choi, Yong-Kyeong Kim
  • Memory system that detects bit errors due to read disturbance and methods thereof
    Patent number: 9471418
    Abstract: Methods and memory systems are provided that can detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.
    Type: Grant
    Filed: October 23, 2012
    Date of Patent: October 18, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Se-Jin Ahn, Yong-Hyeon Kim, Sung-Up Choi, Yong-Kyeong Kim
  • MEMORY SYSTEM THAT DETECTS BIT ERRORS DUE TO READ DISTURBANCE AND METHODS THEREOF
    Publication number: 20140115419
    Abstract: Methods and memory systems are provided that can detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.
    Type: Application
    Filed: October 23, 2012
    Publication date: April 24, 2014
    Inventors: Se-Jin Ahn, Yong-Hyeon Kim, Sung-Up Choi, Yong-Kyeong Kim
  • Memory system that detects bit errors due to read disturbance and methods thereof
    Patent number: 8316278
    Abstract: Methods and memory systems are provided that detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.
    Type: Grant
    Filed: June 18, 2008
    Date of Patent: November 20, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Se-Jin Ahn, Yong-Hyeon Kim, Sung-Up Choi, Yong-Kyeong Kim
  • MEMORY SYSTEM THAT DETECTS BIT ERRORS DUE TO READ DISTURBANCE AND METHODS THEREOF
    Publication number: 20080316822
    Abstract: Methods and memory systems are provided that can detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.
    Type: Application
    Filed: June 18, 2008
    Publication date: December 25, 2008
    Inventors: Se-Jin Ahn, Yong-Hyeon Kim, Sung-Up Choi, Yong-Kyeong Kim