Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract: A batch type apparatus may include a tube; a boat configured to receive a plurality of semiconductor substrates, the boat vertically moved into the tube; a gas nozzle vertically arranged in the tube, the tube having a first portion and a second portion upwardly extended from the first portion; a gas pipe for supplying reaction gases to the gas nozzle, the gas pipe having a horizontal extension and a vertical extension, and the vertical extension extended in the gas nozzle; a fixing member for fixing the first portion of the gas nozzle to the gas pipe, the fixing member having strength higher than that of the gas nozzle; and a clamping member for clamping the gas pipe to the tube. Therefore, breakage of the gas nozzle may be suppressed.

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract: A wafer processing apparatus includes a first tube extending in a vertical direction, a second tube arranged in the first tube and defining a reaction chamber, the reaction chamber being configured to receive a boat that holds a plurality of wafers, first and second gas nozzles in the second tube, the first and second gas nozzles being configured to supply first and second reaction gases, respectively, and being spaced apart from each other along a circumferential direction of the second tube to define a central angle of at about 50° to about 130° with respect to a center of the second tube, and an exhaust portion configured to exhaust residual gas from the reaction chamber, the exhaust portion including an exhaust slit in the second tube and an exhaust space between the first tube and the second tube.

Abstract: A gas supply pipe and a chemical vapor deposition (CVD) apparatus including the gas supply pipe. The gas supply pipe includes: a first pipe connected to a gas storage apparatus via a gas supply line to supply a reacting gas into a reacting furnace; and a second pipe thermally contacting the first pipe to cool the first pipe, wherein a first end of the second pipe is connected to a cooling medium supplying unit via a cooling medium line such that a cooling medium circulates inside the second pipe, and a second, opposite end of the second pipe is connected to a cooling medium collecting unit.

Abstract: A batch type apparatus may include a tube; a boat configured to receive a plurality of semiconductor substrates, the boat vertically moved into the tube; a gas nozzle vertically arranged in the tube, the tube having a first portion and a second portion upwardly extended from the first portion; a gas pipe for supplying reaction gases to the gas nozzle, the gas pipe having a horizontal extension and a vertical extension, and the vertical extension extended in the gas nozzle; a fixing member for fixing the first portion of the gas nozzle to the gas pipe, the fixing member having strength higher than that of the gas nozzle; and a clamping member for clamping the gas pipe to the tube. Therefore, breakage of the gas nozzle may be suppressed.