Abstract: Wafer-level package (semiconductor) devices are described that have a reinforcement layer formed on an adhesion layer and/or a semiconductor substrate and covering at least a portion of at least one solder bump. Additionally, the reinforcement layer may cover at least a portion of a semiconductor device (e.g., a die) mounted on the semiconductor substrate. In an implementation, the wafer-level package (semiconductor) device may include an integrated circuit chip with an attached die, where the integrated circuit chip has at least one solder bump formed thereon with a reinforcement layer formed on a surface of the integrated circuit chip, where the reinforcement layer embeds the die and covers a portion of the at least one solder bump.

Abstract: A semiconductor package device, electronic device, and fabrication methods are described that include at least one sacrificial contact pad as a portion of the semiconductor package device for preventing and reducing stress on the semiconductor package device and increasing board level reliability. In implementations, the semiconductor package device includes a lead frame substrate including at least one lead frame contact pad and at least one sacrificial contact pad, an integrated circuit device electrically coupled to the lead frame substrate, and an encapsulation layer that encapsulates the lead frame substrate and the integrated circuit device.

Abstract: Semiconductor devices are described that have an extended under ball metallization configured to mitigate dielectric layer cracking due to stress, particularly stress caused by CTE mismatch during thermal cycling tests, dynamic deformation during drop tests, or cyclic bending tests, and so on. In an implementation, the semiconductor package devices include an integrated circuit chip having a solder ball and under ball metallization, formed on the integrated circuit chip, which is configured to receive the solder ball so that the solder ball and the under ball metallization have a contact area there between, wherein the area of the under ball metallization is area greater than the contact area.

Abstract: Wafer-level package (semiconductor) devices are described that have a pillar structure that extends at least partially into a solder bump to mitigate thermal stresses to the solder bump. In implementations, the wafer-level package device may comprise an integrated circuit chip having a surface and a solder bump disposed over the surface. The wafer-level package device may also include a pillar structure disposed over the surface that extends at least partially into the solder bump.

Abstract: Semiconductor package devices, such as wafer-level package semiconductor devices, are described that have pillars for providing electrical interconnectivity. In an implementation, the wafer-level package devices include an integrated circuit chip having at least one pillar formed over the integrated circuit chip. The pillar is configured to provide electrical interconnectivity with the integrated circuit chip. The wafer-level package device also includes an encapsulation structure configured to support the pillar.

Abstract: Wafer-level package (semiconductor) devices are described that have a pillar structure that extends at least partially into a solder bump to mitigate thermal stresses to the solder bump. In implementations, the wafer-level package device may comprise an integrated circuit chip having a surface and a solder bump disposed over the surface. The wafer-level package device may also include a pillar structure disposed over the surface that extends at least partially into the solder bump.