Patents by Inventor Yong-Lim Foo

Yong-Lim Foo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a strained semiconductor substrate
    Publication number: 20040224469
    Abstract: A method of manufacturing a strained semiconductor substrate includes the steps of provide a Si substrate and depositing a strained Si1-xGex layer on the Si substrate. The Si substrate and strained Si1-xGex layer are subjected to rapid thermal annealing which forms a relaxed Si1-xGex layer on the Si substrate. The method further includes the steps of depositing a buffer Si1-xGex layer on the relaxed Si1-xGex layer, and depositing Si on the buffer Si1-xGex layer. The buffer Si1-xGex layer causes the deposited Si to form a strained Si layer on the buffer Si1-xGex layer with the combined layers forming the strained semiconductor substrate.
    Type: Application
    Filed: May 8, 2003
    Publication date: November 11, 2004
    Applicant: The Board of Trustees of the University of Illinois
    Inventors: Chong Wee Lim, Yong-Lim Foo, Sukwon Hong, Kenneth A. Bratland, Timothy Spila, Benjamin Cho, Kenji Ohmori, Joseph Greene