Abstract: Various embodiments of the present application are directed towards an integrated memory chip comprising a memory array with a strap-cell architecture that reduces the number of distinct strap-cell types and that reduces strap-line density. In some embodiments, the memory array is limited to three distinct types of strap cells: a source line/erase gate (SLEG) strap cell; a control gate/word line (CGWL) strap cell; and a word-line strap cell. The small number of distinct strap-cell types simplifies design of the memory array and further simplifies design of a corresponding interconnect structure. Further, in some embodiments, the three distinct strap-cell types electrically couple word lines, erase gates, and control gates to corresponding strap lines in different metallization layers of an interconnect structure. By spreading the strap lines amongst different metallization layers, strap-line density is reduced.

Abstract: Various embodiments of the present application are directed towards an integrated memory chip with an enhanced device-region layout for reduced leakage current and an enlarged word-line etch process window (e.g., enhanced word-line etch resiliency). In some embodiments, the integrated memory chip comprises a substrate, a control gate, a word line, and an isolation structure. The substrate comprises a first source/drain region. The control gate and the word line are on the substrate. The word line is between and borders the first source/drain region and the control gate and is elongated along a length of the word line. The isolation structure extends into the substrate and has a first isolation-structure sidewall. The first isolation-structure sidewall extends laterally along the length of the word line and underlies the word line.

Abstract: Various embodiments of the present application are directed towards an integrated memory chip comprising a memory array with a strap-cell architecture that reduces the number of distinct strap-cell types and that reduces strap-line density. In some embodiments, the memory array is limited to three distinct types of strap cells: a source line/erase gate (SLEG) strap cell; a control gate/word line (CGWL) strap cell; and a word-line strap cell. The small number of distinct strap-cell types simplifies design of the memory array and further simplifies design of a corresponding interconnect structure. Further, in some embodiments, the three distinct strap-cell types electrically couple word lines, erase gates, and control gates to corresponding strap lines in different metallization layers of an interconnect structure. By spreading the strap lines amongst different metallization layers, strap-line density is reduced.

Abstract: Various embodiments of the present application are directed towards an integrated memory chip with an enhanced device-region layout for reduced leakage current and an enlarged word-line etch process window (e.g., enhanced word-line etch resiliency). In some embodiments, the integrated memory chip comprises a substrate, a control gate, a word line, and an isolation structure. The substrate comprises a first source/drain region. The control gate and the word line are on the substrate. The word line is between and borders the first source/drain region and the control gate and is elongated along a length of the word line. The isolation structure extends into the substrate and has a first isolation-structure sidewall. The first isolation-structure sidewall extends laterally along the length of the word line and underlies the word line.

Abstract: The present invention relates to a method of decreasing body weight in a patient. The method includes the step of administering a therapeutically effective amount of a somatostatin or a somatostatin agonist to said patient. A pharmaceutical/cosmetic composition comprises the somatostatin or somatostatin agonist. Such products are used to prepare such compositions for the reduction or body weight in a human or mammalian animal.

Abstract: The present invention relates to a method of treating insulin resistance or Syndrome X. The method includes the step of administering a therapeutically effective amount of a somatostatin or a somatostatin agonist to said patient. The invention also includes pharmaceutical compositions comprising a somatostatin or somatostatin agonist and the use of such products in the preparation of such compositions.

Abstract: The present invention relates to a method of treating insulin resistance or Syndrome X by administering a therapeutically effective amount of a somatostatin agonist or a pharmaceutical composition comprised of a somatostatin agonist to a patient suffering from insulin resistance or Syndrome X.

Abstract: The present invention relates to a method of decreasing body weight in a patient. The method includes the step of administering a therapeutically effective amount of a somatostatin or a somatostatin agonist ot said patient. A pharmaceutical/cosmetic composition comprises the somatostatin or somatostatin agonist. Such products are used to prepare such compositions for the reduction or body weight in a human or mammalian animal.

Abstract: The present invention relates to a method of decreasing body weight in a patient. The method includes the step of administering a therapeutically effective amount of a somatostatin or a somatostatin agonist to said patient. A pharmaceutical/cosmetic composition comprises the somatostatin or somatostatin agonist. Such products are used to prepare such compositions for the reduction of body weight in a human or mammalian animal.

Abstract: The present invention relates to a method of treating hyperlipidemia and to reducing triacylglycerols, glycerol and cholesterol in a patient. The method includes the step of administering a therapeutically effective amount of a type-5 selective somatostatin agonist to said patient. A pharmaceutical composition comprises said agonist and such product is used in the preparation of the composition for use in treating hyperlipidemia or reducing triacylglycerols, glycerol and cholesterol in a patient's body.

Abstract: The present invention relates to a method of treating insulin resistance or Syndrome X. The method includes the step of administering a therapeutically effective amount of a somatostatin or a somatostatin agonist to said patient. The invention also includes pharmaceutical compositions comprising a somatostatin or somatostatin agonist and the use of such products in the preparation of such compositions.

Abstract: The use of an antagonist of leptin for the manufacture of a medicament for the treamtne tof disorders resulting from deficiencies in insulin secretion, hyperglycaemia and insulin resistance.

Abstract: The use of an antagonist of leptin for the manufacture of a medicament for the treatment of disorders resulting from deficiencies in insulin secretion, hyperglycaemia and insulin resistance.

Abstract: The present invention relates to a method of treating hyperlipidemia and to reducing triacylglycerols. glycerol and cholesterol in a patient. The method includes the step of administering a therapeutically effective amount of a type-5 selective somatostatin agonist to said patient. A pharmaceutical composition comprises said agonist and such product is used in the preparation of the composition for use in treating hyperlipidemia or reducing triacylglycerols, glycerol and cholesterol in a patient's body.

Abstract: The present invention relates to a method of treating insulin resistance or syndrome X in a patient. The method includes the step of administering a therapeutically effective amount of a somatostatin or a somatostatin agonist to said patient.

Abstract: The use of an antagonist of leptin for the manufacture of a medicament for the treatment of disorders resulting from deficiencies in insulin secretion, hyperglycaemia and insulin resistance.

Abstract: The present invention relates to a method of decreasing body weight in a patient. The method includes the step of administering a therapeutically effective amount of a type-5 selective somatostatin agonist to the patient.