Abstract: Signal processing device comprising: a signal analyser (7) for analysing a received signal into the subband domain; a first signal path (10) and a second signal path (11), the first signal path (10) being decoupled from the second signal path (11), whereby the first signal path (10) and the second signal path (11) are arranged to pass the received signal; only the first signal path (10) includes automatic gain control (3), the first signal path (10) further includes one or more speech metric functions (4, 5, 6) to determine estimated gain functions therein, the signal in the first signal path being passed from the automatic gain control (3) to the one or more speech metric functions (4, 5, 6) to enable determination of the estimated gain functions, the estimated gain functions determined by the one or more speech metric functions being combined to generate an overall gain function which is applied (9) to the signal (14) in the second signal path (11) to generate an enhanced signal; and a signal synthesiser (8

Abstract: A method and system for deriving Time Dependent Dielectric Breakdown (TDDB) lifetime of a batch of semiconductor devices, the method comprising, defining a qualifying criteria based on past measurement data; measuring at least one parameter of one or more semiconductor devices representative of the batch; comparing said at least one parameter against the qualifying criteria; and if said at least one parameter qualifies according to the qualifying criteria, deriving the TDDB lifetime for the batch based on the past measurement data and an electrical measurement of the semiconductor devices.