Abstract: A method for controlling thicknesses of layers formed by a deposition apparatus for semiconductor device fabrication includes retrieving a latest process record for a latest batch from a process database for a deposition apparatus. Each process record in the database describes one layer deposition process using the deposition apparatus operating on one batch. A batch includes a plurality of lots, each lot having a workpiece. The method further includes receiving a latest array of thicknesses, each thickness from one lot of the latest batch. Then an automatic corrected setting is calculated. If the automatic corrected setting is within a specification setting range, the specification is met and the method continues. A next batch signal is input if the layer deposition process may proceed on a next batch, and the automatic corrected setting is displayed. A predetermined correction command is input to indicate a predetermined corrected setting is to be used instead of the automatic corrected setting.

Abstract: An oxidizing apparatus and a method for forming an oxide film by controlling the oxide film growth using the same are provided. The apparatus includes an oxide film growing means, oxide film thickness measuring means and controlling means in order to form an oxide film of a desired thickness on a wafer. Here, the controlling means automatically calculates the oxide film growing time corresponding to a target thickness of an oxide film to be grown on the wafer. Accordingly, operation is simplified and a differing thicknesses of the oxide film in each batch is minimized, to thereby enhance reliability with respect to a precess and produce uniform product.