Patents by Inventor Yong Mook Baek

Yong Mook Baek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and operating method thereof
    Patent number: 8917555
    Abstract: There is disclosed an operating method of a semiconductor device including programming a memory cell by supplying a program voltage to a control gate of the memory cell and a detrap voltage to a well which is formed in a semiconductor substrate, and subsequently removing electrons trapped in a tunnel insulating layer of the memory cell by supplying a voltage lower than the detrap voltage to the control gate while also supplying the detrap voltage to the well before the programmed memory cell is verified.
    Type: Grant
    Filed: April 25, 2012
    Date of Patent: December 23, 2014
    Assignee: Hynix Semiconductor Inc.
    Inventor: Yong Mook Baek
  • Three-dimensional non-volatile memory device, memory system including the same and method of manufacturing the same
    Patent number: 8912591
    Abstract: A three-dimensional (3-D) non-volatile memory device includes a plurality of vertical channel layers protruding from a substrate, a plurality of interlayer insulating layers and a plurality of memory cells stacked alternately along the plurality of vertical channel layers, and an air gap formed in the plurality of interlayer insulating layers disposed between the plurality of memory cells, so that capacitance between word lines is reduced to thus improve a program speed.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: December 16, 2014
    Assignee: SK Hynix Inc.
    Inventors: Yong Mook Baek, Jung Ryul Ahn
  • THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20130148398
    Abstract: A three-dimensional (3-D) non-volatile memory device according to an embodiment of the present invention includes a plurality of vertical channel layers protruding from a substrate, a plurality of interlayer insulating layers and a plurality of memory cells stacked alternately along the plurality of vertical channel layers, and an air gap formed in the plurality of interlayer insulating layers disposed between the plurality of memory cells, so that capacitance between word lines is reduced to thus improve a program speed.
    Type: Application
    Filed: August 31, 2012
    Publication date: June 13, 2013
    Applicant: SK hynix Inc.
    Inventors: Yong Mook BAEK, Jung Ryul AHN
  • SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF
    Publication number: 20120275223
    Abstract: There is disclosed an operating method of a semiconductor device including programming a memory cell by supplying a program voltage to a control gate of the memory cell and a detrap voltage to a well which is formed in a semiconductor substrate, and subsequently removing electrons trapped in a tunnel insulating layer of the memory cell by supplying a voltage lower than the detrap voltage to the control gate while also supplying the detrap voltage to the well before the programmed memory cell is verified.
    Type: Application
    Filed: April 25, 2012
    Publication date: November 1, 2012
    Inventor: Yong Mook BAEK
  • Non-volatile Memory Device
    Publication number: 20100246263
    Abstract: This patent relates to a non-volatile memory device and a driving method thereof. The non-volatile memory device includes a source select line in which a floating gate and a control gate are electrically connected to each other, a drain select line in which a floating gate and a control gate are electrically isolated from each other, and a plurality of word lines formed between the source select line and the drain select line.
    Type: Application
    Filed: June 8, 2010
    Publication date: September 30, 2010
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Yoo Nam Jeon, Yong Mook Baek, Keon Soo Shim
  • Non-volatile memory device and driving method thereof
    Patent number: 7773429
    Abstract: This patent relates to a non-volatile memory device and a driving method thereof The non-volatile memory device includes a source select line in which a floating gate and a control gate are electrically connected to each other, a drain select line in which a floating gate and a control gate are electrically isolated from each other, and a plurality of word lines formed between the source select line and the drain select line.
    Type: Grant
    Filed: February 21, 2008
    Date of Patent: August 10, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Yoo Nam Jeon, Yong Mook Baek, Keon Soo Shim
  • Non-Volatile Memory Device and Driving Method Thereof
    Publication number: 20080205162
    Abstract: This patent relates to a non-volatile memory device and a driving method thereof The non-volatile memory device includes a source select line in which a floating gate and a control gate are electrically connected to each other, a drain select line in which a floating gate and a control gate are electrically isolated from each other, and a plurality of word lines formed between the source select line and the drain select line.
    Type: Application
    Filed: February 21, 2008
    Publication date: August 28, 2008
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Yoo Nam Jeon, Yong Mook Baek, Keon Soo Shim