Patents by Inventor Yong Mu Kim

Yong Mu Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Charge trapping layer, method of forming the charge trapping layer, non-volatile memory device using the same and method of fabricating the non-volatile memory device
    Publication number: 20100276747
    Abstract: Provided is a charge trapping layer which has excellent memory characteristics, a method of forming the charge trapping layer, a nonvolatile memory device using the charge trapping layer, and a method of fabricating the nonvolatile memory device, in which a hybrid nanoparticle which is obtained by mixing a nanoparticle having an excellent programming characteristic with a nanoparticle having an excellent erasing characteristic is used as the charge trapping layer. The charge trapping layer for use in the nanoparticle is discontinuously formed between a tunneling oxide film and a control oxide film, and includes at least two different kinds of numerous nanoparticles.
    Type: Application
    Filed: October 30, 2009
    Publication date: November 4, 2010
    Inventors: Jang-Sik Lee, Byeong Hyeok Sohn, Yong Mu Kim, Jeong Hwa Kwon, Hyunjung Shin, Jaegab Lee