Patents by Inventor Yong Ouyang
Yong Ouyang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11156679Abstract: An optimized extremely-large magnetic field measuring method includes: placing four orthogonally configured tunneling magnetoresistive resistors into an externally applied magnetic field, acquiring the resistances of the tunneling magnetoresistive resistors; calculating the angle between a magnetization direction of a free layer of each tunneling magnetoresistive resistor and that of a reference layer on the basis of the resistances of the four resistors; calculating magnetic field intensity H1 and direction ?1 of the externally applied magnetic field calculating magnetic field intensity H2 and direction ?2 of the externally applied magnetic field; and determining final magnetic field intensity H0 of the externally applied magnetic field on the basis of magnetic field intensity H1 and of magnetic field intensity H2; determining final direction ? of the externally applied magnetic field on the basis of direction ?2 and of direction ?1; and optimizing on the basis of direction ? and of magnetic field intensityType: GrantFiled: June 28, 2017Date of Patent: October 26, 2021Assignees: TSINGHUA UNIVERSITY, SICHUAN ENERGY INTERNET RESEARCH INSTITUTE, TSINGHUA UNIVERSITYInventors: Jun Hu, Yong Ouyang, Jinliang He, Shanxiang Wang, Gen Zhao, Zhongxu Wang, Rong Zeng, Chijie Zhuang, Bo Zhang, Zhanqing Yu
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Patent number: 10989770Abstract: A wide magnetic field range measuring method includes the measurement step for a medium-and-large magnetic field and the measurement step for an extremely large magnetic field. In addition to that, the method further includes: Step 1: placing four orthogonally-configured magnetic resistance resistors into an external magnetic field and obtaining the resistance value of each magnetic resistance resistor; Step 2: substituting the resistance values of two mutually orthogonal magnetic resistance resistors into the measurement step for a medium-and-large magnetic field for calculation; if calculation process converges, then, determining that the external magnetic field as a medium-and-large magnetic field with the calculation result representing the magnetic field intensity and the direction of the medium-and-large magnetic field.Type: GrantFiled: June 28, 2017Date of Patent: April 27, 2021Assignees: TSINGHUA UNIVERSITY, SICHUAN ENERGY INTERNET RESEARCH INSTITUTE, TSINGHUA UNIVERSITYInventors: Jinliang He, Yong Ouyang, Jun Hu, Shanxiang Wang, Gen Zhao, Zhongxu Wang, Rong Zeng, Chijie Zhuang, Bo Zhang, Zhanqing Yu
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Patent number: 10976385Abstract: An all-quadrant measurement method for a middle-large magnetic field includes the steps of placing four orthogonally configured magnetic resistances in an external magnetic field; determining two magnetic resistances with the minimum resistance values, thereby determining that the other two magnetic resistances are in an S1 status, and making resistance values of the two magnetic resistances which are in the S1 status be R1 and R2, and at the same time taking an initial reference layer magnetization direction of the two magnetic resistances as a given reference layer magnetization direction when there is no magnetic field; respectively calculating an included angle between a free layer magnetization direction and the reference layer magnetization direction of the two magnetic resistances; respectively calculating the free layer magnetization direction of the two magnetic resistances; and solving a magnetic field amplitude and direction of the external magnetic field.Type: GrantFiled: June 28, 2017Date of Patent: April 13, 2021Assignees: TSINGHUA UNIVERSITY, SICHUAN ENERGY INTERNET RESEARCH INSTITUTE, TSINGHUA UNIVERSITYInventors: Yong Ouyang, Jinliang He, Jun Hu, Shanxiang Wang, Gen Zhao, Zhongxu Wang, Rong Zeng, Chijie Zhuang, Bo Zhang, Zhanqing Yu
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Publication number: 20210040449Abstract: The disclosure provides a method of generating modified T cells from engineered stem cells for use in an autologous or allogeneic setting for engineered immunotherapy. The knockout of endogenous TCR or HLA expression allows for engineering of modified pluripotent stem cells that reduce or eliminate the risk of Graft versus Host Disease (GVHD), provide resistance to elimination by a recipient's T cells and NK cells, and allow for controllable T cell activity. Thus, this method allows the development of T cells with reduced immune reactivity.Type: ApplicationFiled: February 15, 2019Publication date: February 11, 2021Inventors: Eric GSCHWENG, Rajul JAIN, Yong OUYANG, Arianne PEREZ GARCIA, Margo ROBERTS, Ruben ALVAREZ RODRIGUEZ, Drake SMITH, Xingliang ZHOU
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Publication number: 20190369173Abstract: An all-quadrant measurement method for a middle-large magnetic field includes the steps of placing four orthogonally configured magnetic resistances in an external magnetic field; determining two magnetic resistances with the minimum resistance values, thereby determining that the other two magnetic resistances are in an S1 status, and making resistance values of the two magnetic resistances which are in the S1 status be R1 and R2, and at the same time taking an initial reference layer magnetization direction of the two magnetic resistances as a given reference layer magnetization direction when there is no magnetic field; respectively calculating an included angle between a free layer magnetization direction and the reference layer magnetization direction of the two magnetic resistances; respectively calculating the free layer magnetization direction of the two magnetic resistances; and solving a magnetic field amplitude and direction of the external magnetic field.Type: ApplicationFiled: June 28, 2017Publication date: December 5, 2019Inventors: Yong OUYANG, Jinliang HE, Jun HU, Shanxiang WANG, Gen ZHAO, Zhongxu WANG, Rong ZENG, Chijie ZHUANG, Bo ZHANG, Zhanqing YU
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Publication number: 20190339342Abstract: A wide magnetic field range measuring method includes the measurement step for a medium-and-large magnetic field and the measurement step for an extremely large magnetic field. In addition to that, the method further includes: Step 1: placing four orthogonally-configured magnetic resistance resistors into an external magnetic field and obtaining the resistance value of each magnetic resistance resistor; Step 2: substituting the resistance values of two mutually orthogonal magnetic resistance resistors into the measurement step for a medium-and-large magnetic field for calculation; if calculation process converges, then, determining that the external magnetic field as a medium-and-large magnetic field with the calculation result representing the magnetic field intensity and the direction of the medium-and-large magnetic field.Type: ApplicationFiled: June 28, 2017Publication date: November 7, 2019Inventors: Jinliang HE, Yong OUYANG, Jun HU, Shanxiang WANG, Gen ZHAO, Zhongxu WANG, Rong ZENG, Chijie ZHUANG, Bo ZHANG, Zhanqing YU
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Publication number: 20190277924Abstract: An optimized extremely-large magnetic field measuring method includes: placing four orthogonally configured tunneling magnetoresistive resistors into an externally applied magnetic field, acquiring the resistances of the tunneling magnetoresistive resistors; calculating the angle between a magnetization direction of a free layer of each tunneling magnetoresistive resistor and that of a reference layer on the basis of the resistances of the four resistors; calculating magnetic field intensity H1 and direction ?1 of the externally applied magnetic field; calculating magnetic field intensity H2 and direction ?2 of the externally applied magnetic field; and determining final magnetic field intensity H0 of the externally applied magnetic field on the basis of magnetic field intensity H1 and of magnetic field intensity H2; determining final direction ? of the externally applied magnetic field on the basis of direction ?2 and of direction ?1; and optimizing on the basis of direction ? and of magnetic field intensityType: ApplicationFiled: June 28, 2017Publication date: September 12, 2019Inventors: Jun HU, Yong OUYANG, Jinliang HE, Shanxiang WANG, Gen ZHAO, Zhongxu WANG, Rong ZENG, Chijie ZHUANG, Bo ZHANG, Zhanqing YU
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Publication number: 20180369284Abstract: The disclosure provides a method of generating non-clustered stem cells. Cluster disruption prior to mesoderm differentiation increases yield and efficiency in hEMP and T cell differentiation. Thus, this method allows the development of improved methods of hEMP and T cell differentiation.Type: ApplicationFiled: May 25, 2018Publication date: December 27, 2018Inventors: Eric Gschweng, Ruben Rodriguez, Yong Ouyang
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Publication number: 20130049750Abstract: A giant magnetoresistance current sensor comprises an amorphous alloy magnetic ring having an air gap; a DC magnetic bias coil wound onto the amorphous alloy magnetic ring; a DC constant current source supplying power for the DC magnetic bias coil; a giant magnetoresistance chip disposed in the air gap and having positive and negative outputs; an instrument amplifier having a non-inverting input connected to the positive output of the giant magnetoresistance chip, and an inverting input connected to the negative output of the giant magnetoresistance chip; an operational amplifier having a non-inverting input connected to an output of the instrument amplifier; a voltage following resistance connected between an inverting input and an output of the operational amplifier; an analog to digital converter having an input connected to the output of the operational amplifier; and a digital tube display connected to an output of the analog to digital converter.Type: ApplicationFiled: May 29, 2012Publication date: February 28, 2013Applicant: Tsinghua UniversityInventors: Jinliang He, Yong Ouyang, Jun Hu, Shanxiang Wang, Shijie Ji, Rong Zeng, Bo Zhang, Zhanqing Yu