Abstract: A method for manufacturing a thin film solar cell device includes forming a back contact layer on a substrate, forming an CIGS absorber layer on the back contact layer, treating the CIGS absorber layer with a metal-based alkaline solution, and forming a buffer layer on the CIGS absorber layer where the treatment of the CIGS absorber layer improves the adhesion between the CIGS absorber layer and the buffer layer and also improves the quality of the p-n junction at the CIGS absorber layer/buffer layer interface.

Abstract: A method for manufacturing a thin film solar cell device includes forming a back contact layer on a substrate, forming an CIGS absorber layer on the back contact layer, treating the CIGS absorber layer with a metal-based alkaline solution, and forming a buffer layer on the CIGS absorber layer where the treatment of the CIGS absorber layer improves the adhesion between the CIGS absorber layer and the buffer layer and also improves the quality of the p-n junction at the CIGS absorber layer/buffer layer interface.

Abstract: A thin film solar cell and process for forming the same. The solar cell includes a bottom electrode layer, semiconductor light absorbing layer, and a TCO top electrode layer. In one embodiment, a TCO seed layer is formed between the top electrode and absorber layers to improve adhesion of the top electrode layer to the absorber layer. In one embodiment, the seed layer is formed at a lower temperature than the TCO top electrode layer and has a different microstructure.

Abstract: A method of testing a test wafer includes shielding test centers on a test wafer using shielding tabs during the deposition of a layer. The test wafer has the same size and shape of product wafers. The shielding tabs are then removed from the test wafer. A plurality of predetermined points which are separated from each test center by a critical interval are checked, and whether each point is covered by the layer is determined through an interferometer or a microprobe. The test wafer is processed after adjustments to or maintenance on equipment, or after a fixed number of product wafers have been processed.

Abstract: A method of testing a test wafer includes shielding test centers on a test wafer using shielding tabs during the deposition of a layer. The test wafer has the same size and shape of product wafers. The shielding tabs are then removed from the test wafer. A plurality of predetermined points which are separated from each test center by a critical interval are checked, and whether each point is covered by the layer is determined through an interferometer or a microprobe. The test wafer is processed after adjustments to or maintenance on equipment, or after a fixed number of product wafers have been processed.

Abstract: A capacitor having an electrically/conductive plate, an electrically conductive segmented electrically conductive plate segments and a second plurality of electrically conductive plate segments, a first capacitor dielectric disposed between the plate and the segment plate, at least one electrically conductive interconnect coupling each of the plate segment of one of the first and second plurality of plate segments to the plate, and a second capacitor dieletric disposed between the plate segments.

Abstract: A capacitor having an electrically/conductive plate, an electrically conductive segmented plate defining a first plurality of electrically conductive plate segments and a second plurality of electrically conductive plate segments, a first capacitor dielectric disposed between the plate and the segmented plate, at least one electrically conductive interconnect coupling each of the plate segments of one of the first and second plurality of plate segments to the plate, and a second capacitor dielectric disposed between the plate segments.