Abstract: The present invention pertains to a method of producing solar-grade polysilicon ingot conducive to reduce the energy consumption and cost and have high yield of casting ingot without complicating equipments. It includes melting and heating raw materials into raw water; mixing the slag removal with the water for eliminating metal impurities; conducting some water vapor for obviating B-atomic and generating pure water, thereafter heated from 1500°-1700° C.; advance heating the crucible and graphite mold in the temperature range of 1000°-1400° C., further pouring the pure water therein and having water temperature from 1450°-1600° C.; adjusting the temperature of the crucible and mold from 1400°-1430° C., thence to the range of 1000°-1200° C. for concentrating the solid/liquid property and impurities of the water on central of the mold; reducing the temperature of the crucible range of 1000°-1200° C. to 200°-400° C., thus finishing an integral polysilicon ingot.

Abstract: The present invention pertains to a method for incessantly producing polysilicon ingots, especially fabricated of an equality polycrystalline material. It contains a metallurgical method for continuously producing large amount of polysilicon ingot made by metal silicon, further comprising the steps of aligning empty graphite molds on furnace cars; preheating the molds in the preheating area; pouring the liquidized silicon into the preheated molds; transporting the molds filled with liquidized silicon from the high-temperature area, thence to a medium-temperature area, and then to a low-temperature area for solidifying the liquidized silicon into crystallized silicon; cooling the crystallized silicon until reaching the room temperature by the assistance of a shroud in a rotary conveyer track, thus generating an integral polysilicon ingot. The apparatus comprises a body, a chamber, a track, cars, a front and rear auxiliary cars, a rotary conveyer track, a propulsion apparatus, and an adjusting system.