Abstract: A dual polarization antenna is disclosed in at least one embodiment of the present disclosure, including a base substrate, a power feeding unit supported on the base substrate, and a radiating plate supported on the power feeding unit, the power feeding unit includes a first feeding substrate and a second feeding substrate arranged to cross each other on the base substrate, the first feeding substrate includes a first feed line configured to supply a first reference phase signal to a first point on the radiating plate and to supply a first reverse phase signal having a reverse phase relative to the first reference phase signal, to a second point on the radiating plate, the second feeding substrate includes a second feed line configured to supply a second reference phase signal to a third point on the radiating plate and to supply a second reverse phase signal having a reverse phase relative to the second reference phase signal, to a fourth point on the radiating plate, and wherein the first feeding substrate

Abstract: A display device is provided. The display device comprises a substrate, pixels disposed on the substrate, and a plurality of signal lines for applying a signal to the pixels, the plurality of signal lines disposed on the substrate, the signal lines being spaced apart from one another and extending parallel to a first direction, and an identification pattern for identifying line numbers of the plurality of signal lines, wherein the identification pattern includes wide portions on one or more of the signal lines.

Abstract: The present invention relates to an apparatus and method for controlling automatic color calibration of a video wall by smoothly displaying an entire video on the video wall and improving user visibility. The automatic color calibration apparatus comprises a control unit configured to output the number of the plurality of video boards constituting the video wall to the display unit and store the number in a storage unit according to operation signals from the user input unit, and perform automatic color calibration for the plurality of video boards.

Abstract: The present invention relates to a power and video redundancy system for a display system of a smartboard. More particularly, the present invention relates to a power and video redundancy system applied to a smartboard display system which minimizes the user's inconvenience due to the failure or damage of components and enables the manager to repair or change the parts without the user being aware of the loss or damage.

Abstract: The present invention relates to a power and video redundancy system for a display system of a smartboard. More particularly, the present invention relates to a power and video redundancy system applied to a smartboard display system which minimizes the user's inconvenience due to the failure or damage of components and enables the manager to repair or change the parts without the user being aware of the loss or damage.

Abstract: The present invention relates to an apparatus and method for controlling automatic color calibration of a video wall by smoothly displaying an entire video on the video wall and improving user visibility. The automatic color calibration apparatus comprises a control unit configured to output the number of the plurality of video boards constituting the video wall to the display unit and store the number in a storage unit according to operation signals from the user input unit, and perform automatic color calibration for the plurality of video boards.

Abstract: An organic light emitting display apparatus that can prevent corrosion during manufacturing is disclosed. The apparatus can have a remarkably enhanced yield. The apparatus includes: a substrate having a display area, a thin film transistor disposed inside the display area, an electrode power supply line disposed outside the display area, a pixel electrode disposed inside the display area of the substrate and electrically connected to the thin film transistor, an auxiliary conductive layer contacting the electrode power supply line at a side of the electrode power supply line, a pixel defining layer exposing the pixel electrode covering the auxiliary conductive layer and exposing the electrode power supply line. The apparatus also includes an intermediate layer disposed on the pixel electrode and comprising an emitting layer, and a counter electrode disposed on the intermediate layer and extending outside the display area of the substrate to contact the electrode power supply line.

Abstract: An MgO protective layer formed on a front substrate of a plasma display panel and a method of manufacturing the protective layer are disclosed. The protective layer is manufactured by using an MgO pellet, which is simultaneously doped with a first doping material of BeO and/or CaO among alkali earth metals and a second material selected from the group consisting of Sc2O3, Sb2O3, Er2O3, Mo2O3, and Al2O3, as a deposition source through a vacuum deposition method. The protective layer remarkably improves a discharge efficiency of the PDP and shortens a discharge delay time, so that it is applied to a signal can PDP. Also, it lowers a manufacturing cost by reducing the number of electronic components.

Abstract: A method of fabricating a semiconductor device and a semiconductor device fabricated by the same method are disclosed. The method includes: depositing a silicon layer containing amorphous silicon on a substrate using any one of a plasma enhanced chemical vapor deposition (PECVD) method and a low pressure chemical vapor deposition (LPCVD) method; annealing the silicon layer in an H2O atmosphere at a certain temperature to form a polycrystalline silicon layer; forming a gate insulating layer on the polycrystalline silicon layer; forming impurity regions in the polycrystalline silicon layer to define source and drain regions; and activating the impurity regions. Thus, it is possible to provide a semiconductor device, in which the substrate is prevented from being bent and polycrystalline silicon constituting a semiconductor layer is excellent.

Abstract: A semiconductor device and method of fabricating the same are provided. The method includes: depositing a silicon layer containing amorphous silicon on a substrate; defining source and drain regions by doping the silicon layer with impurity ions; crystallizing the amorphous silicon by an annealing process under an atmosphere of H2O at a predetermined temperature, and at the same time activating the impurity ions to form a semiconductor layer; forming a gate insulating layer over the entire surface of the substrate having the semiconductor layer; and forming a gate electrode on the gate insulating layer in correspondence with a channel region of the semiconductor layer, in which the annealing process is simplified by crystallizing the polycrystalline silicon and at the same time activating the impurity ions, thereby preventing the substrate from being deformed due to high temperature during the annealing process.

Abstract: An organic light emitting display apparatus that can prevent corrosion during manufacturing is disclosed. The apparatus can have a remarkably enhanced yield. The apparatus includes: a substrate having a display area, a thin film transistor disposed inside the display area, an electrode power supply line disposed outside the display area, a pixel electrode disposed inside the display area of the substrate and electrically connected to the thin film transistor, an auxiliary conductive layer contacting the electrode power supply line at a side of the electrode power supply line, a pixel defining layer exposing the pixel electrode covering the auxiliary conductive layer and exposing the electrode power supply line. The apparatus also includes an intermediate layer disposed on the pixel electrode and comprising an emitting layer, and a counter electrode disposed on the intermediate layer and extending outside the display area of the substrate to contact the electrode power supply line.

Abstract: A plasma display panel and a method of making thereof such that the plasma display panel includes a first substrate and a second substrate arranged opposite to each other; a plurality of address electrodes disposed on the first substrate; a dielectric layer disposed to cover the address electrodes disposed on the first substrate; a plurality of display electrodes disposed to cross the address electrodes on a second substrate; an inorganic oxide layer disposed to cover the display electrodes; an MgO protective layer disposed to cover the inorganic oxide layer; barrier ribs disposed between the first substrate and the second substrate to define a plurality of discharge cells; and phosphor layers disposed in the discharge cells.

Abstract: An MgO protective layer formed on a front substrate of a plasma display panel and a method of manufacturing the protective layer are disclosed. The protective layer is manufactured by using an MgO pellet, which is simultaneously doped with a first doping material of BeO and/or CaO among alkali earth metals and a second material selected from the group consisting of Sc2O3, Sb2O3, Er2O3, Mo2O3, and Al2O3, as a deposition source through a vacuum deposition method. The protective layer remarkably improves a discharge efficiency of the PDP and shortens a discharge delay time, so that it is applied to a signal can PDP. Also, it lowers a manufacturing cost by reducing the number of electronic components.

Abstract: Disclosed is a method of manufacturing rear plate barrier ribs for Plasma Display Panel (PDP), which includes the steps of: forming barrier ribs by infiltrating the barrier rib forming paste into grooves of a mold by using the capillary phenomenon, and then sintering the paste. This method causes rare environmental pollution, enables to make barrier ribs having fine and complex shapes and reduces material costs required for the barrier rib. Thus, the method may improve quality of PDP and reduce manufacture costs of the rear plate.

Abstract: The flat display of the present invention includes a first substrate and a second substrate arranged opposite to each other, barrier ribs that are disposed in a space between the first substrate and the second substrate and that divide a discharge space to define partitioned discharge spaces, a phosphor layer disposed inside the partitioned discharge spaces, address electrodes disposed on the second substrate in one direction, a second dielectric layer disposed to cover the address electrodes on the second substrate, at least a pair of display electrodes that are disposed on the first substrate in a direction crossing the address electrodes and arranged opposite to each other in each partitioned discharge space, and a first dielectric layer disposed to cover the display electrodes on the first substrate. A carbon-based material is disposed to extend from first dielectric layer toward the discharge space.

Abstract: The flat panel display device of the present invention includes first and second substrates arranged opposite to each other; barrier ribs disposed between the first and second substrates; a phosphor layer disposed in a discharge space; address electrodes disposed on the second substrate along one direction; a second dielectric layer covering the address electrodes on the second substrate; at least a pair of display electrodes disposed on the first substrate in a direction crossing the address electrodes and arranged opposite to each other in the discharge space; and a first dielectric layer covering the display electrodes on the first substrate. Herein, an electron amplification layer including an electron amplifying material selected from the group consisting of ZnO, Al2O3, SiC, diamond, and combinations thereof is disposed on the first dielectric layer, and the electron amplifying material has a nanorod shape grown toward the discharge space.

Abstract: A semiconductor device and method of fabricating the same are provided. The method includes: depositing a silicon layer containing amorphous silicon on a substrate; defining source and drain regions by doping the silicon layer with impurity ions; crystallizing the amorphous silicon by an annealing process under an atmosphere of H2O at a predetermined temperature, and at the same time activating the impurity ions to form a semiconductor layer; forming a gate insulating layer over the entire surface of the substrate having the semiconductor layer; and forming a gate electrode on the gate insulating layer in correspondence with a channel region of the semiconductor layer, in which the annealing process is simplified by crystallizing the polycrystalline silicon and at the same time activating the impurity ions, thereby preventing the substrate from being deformed due to high temperature during the annealing process.

Abstract: A method of fabricating a semiconductor device and a semiconductor device fabricated by the same method are disclosed. The method includes: depositing a silicon layer containing amorphous silicon on a substrate using any one of a plasma enhanced chemical vapor deposition (PECVD) method and a low pressure chemical vapor deposition (LPCVD) method; annealing the silicon layer in an H2O atmosphere at a certain temperature to form a polycrystalline silicon layer; forming a gate insulating layer on the polycrystalline silicon layer; forming impurity regions in the polycrystalline silicon layer to define source and drain regions; and activating the impurity regions. Thus, it is possible to provide a semiconductor device, in which the substrate is prevented from being bent and polycrystalline silicon constituting a semiconductor layer is excellent.