Abstract: A display device includes a substrate; a light-emitting element layer on the substrate; a first thin-film encapsulation layer that is on the light-emitting element layer, has an upper surface conforming an upper surface of the light-emitting element layer, and includes a recessed portion; a bank layer on the first thin-film encapsulation layer and having an opening overlapping the recessed portion; a wavelength conversion layer in the opening on the first thin-film encapsulation layer and at least partially in the recessed portion; a first inorganic layer on the bank layer and the wavelength conversion layer; an organic layer on the first inorganic layer; and a second inorganic layer on the organic layer.

Abstract: A semiconductor memory device includes a cell substrate, a plurality of gate electrodes sequentially stacked on the cell substrate and extending in a first direction, first and second channel structures extending in a second direction different from the first direction and penetrating the plurality of gate electrodes, and a bit line disposed on the plurality of gate electrodes. The first and second channel structures each include a ferroelectric layer, a channel layer, a gate insulating layer and a back gate electrode, which are sequentially disposed on side walls of the plurality of gate electrodes. The first channel structure and the second channel structure are adjacent to each other in the first direction and share a bit line.

Abstract: The present disclosure relates to a data driving device, a data processing device, and a system for driving a display device and, more particularly, it relates to a data driving device, a data processing device, and a system for smoothly performing a low-speed communication through a communication line including an alternating current coupling capacitor.

Abstract: The present disclosure relates to a data driving device and a method of driving the data driving device and, more particularly, to a data driving device and a method of driving the same in which a tuning of a set value of an internal circuit is automatically performed.

Abstract: The present disclosure relates to a data driving device, a data processing device, and a system for driving a display device and, more particularly, it relates to a data driving device, a data processing device, and a system for smoothly performing a low-speed communication through a communication line including an alternating current coupling capacitor.

Abstract: A display device includes: a first base having a display area; light-emitting elements on the first base; and an encapsulation layer over the light-emitting elements. The encapsulation layer includes: a first inorganic layer; an organic layer on the first inorganic layer; and a second inorganic layer on the organic layer. The first inorganic layer includes: a first buffer layer on the light-emitting elements; a first barrier layer on the first buffer layer; a first porous layer on the first barrier layer; a second barrier layer on the first porous layer; and a second buffer layer on the second barrier layer. A refractive index of the first buffer layer, the first barrier layer, and the first porous layer are different from one another, and the refractive index of the first porous layer is smaller than the refractive index of the first buffer layer and the first barrier layer.

Abstract: A semiconductor device includes a plurality of first gate electrodes sequentially stacked on a substrate, a second gate electrode on the plurality of first gate electrodes, a first channel structure extending through the plurality of first gate electrodes and a portion of the second gate electrode, a buried insulation pattern on a sidewall of the first channel structure, of which an upper surface is at a higher level than a top end of the first channel structure, a second channel structure extending through a remainder of the second gate electrode, the second channel structure connected to the first channel structure, and a buried conductive pattern on a sidewall of the second channel structure.

Abstract: A camera module comprises: a first housing; a lens module disposed in the first housing; a second housing coupled to the first housing; a first printed circuit board disposed in the inner space of the first housing and the second housing; an image sensor disposed on the first printed circuit board; and a shield can disposed under the first printed circuit board in the second housing, wherein the shield can comprises a rib which comes into contact with the lower surface of the first printed circuit board.

Abstract: An embodiment of the present invention relates to a lens module comprising: a first lens which comprises a center portion including a curved surface and a periphery portion extending from the center portion; an electrode which is disposed on the first lens; and first and second conductive parts which are disposed on the electrode, wherein the first and second conductive parts include first and second surfaces opposite to each other with respect to the center portion therebetween, respectively, and the first and second surfaces are convex toward the center portion.

Abstract: A cell balancing module according to an embodiment of the present invention comprises: a main board on which a plurality of cell balancing resistors are mounted; at least one sub-board on which a plurality of cell balancing resistors are mounted and which is formed above the main board while being spaced a predetermined distance apart therefrom; and at least one connector which supports the sub-board to be spaced apart from the main board and electrically connects the sub-board to the main board.

Abstract: A substrate module according to an embodiment of the present invention comprises: a first substrate which includes transformer connection part to be connected to terminals of a transformer, at least one second substrate on which a switch module to be connected to the transformer is formed; and a conductive connector which connects the first substrate and the second substrate to each other, wherein the first substrate and the second substrate are arranged by the conductive connector such that a predetermined angle is formed therebetween.

Abstract: Disclosed are a printed circuit board connector according to an embodiment and a module device including same. The printed circuit board connector comprises: a substrate; holes formed in the substrate at predetermined intervals and coated with a metal material on the inner circumferential surface thereof so as to form a metal layer; a first metal pad formed at one end of the holes and connected to the metal layer; and a second metal pad formed at the other end of the holes and connected to the metal layer.

Abstract: A semiconductor device includes a plurality of first gate electrodes sequentially stacked on a substrate, a second gate electrode on the plurality of first gate electrodes, a first channel structure extending through the plurality of first gate electrodes and a portion of the second gate electrode, a buried insulation pattern on a sidewall of the first channel structure, of which an upper surface is at a higher level than a top end of the first channel structure, a second channel structure extending through a remainder of the second gate electrode, the second channel structure connected to the first channel structure, and a buried conductive pattern on a sidewall of the second channel structure.

Abstract: A semiconductor device includes a plurality of first gate electrodes sequentially stacked on a substrate, a second gate electrode on the plurality of first gate electrodes, a first channel structure extending through the plurality of first gate electrodes and a portion of the second gate electrode, a buried insulation pattern on a sidewall of the first channel structure, of which an upper surface is at a higher level than a top end of the first channel structure, a second channel structure extending through a remainder of the second gate electrode, the second channel structure connected to the first channel structure, and a buried conductive pattern on a sidewall of the second channel structure.

Abstract: A semiconductor device includes a plurality of first gate electrodes sequentially stacked on a substrate, a second gate electrode on the plurality of first gate electrodes, a first channel structure extending through the plurality of first gate electrodes and a portion of the second gate electrode, a buried insulation pattern on a sidewall of the first channel structure, of which an upper surface is at a higher level than a top end of the first channel structure, a second channel structure extending through a remainder of the second gate electrode, the second channel structure connected to the first channel structure, and a buried conductive pattern on a sidewall of the second channel structure.

Abstract: A continuous casting and rolling apparatus includes: a continuous casting device; a cutting device that is disposed at the output side of the continuous casting device and cuts an inner slab produced from the continuous casting device; a rolling device pressing down on the slab and disposed downstream of the continuous casting device in the moving direction of the inner slab; a tunnel furnace which is disposed between the cutting device and the rolling device and heats the slab disposed on the main path of the inner slab that is transferred from the continuous casting device to the rolling device; and a loading adjustment unit which is disposed adjacent to the tunnel furnace and unloads the slab from the main path from the outlet side of the tunnel furnace and loads the slab onto the main path from the inlet side of the tunnel furnace.

Abstract: A method for fabricating a semiconductor device, the method including forming a mold structure on a substrate such that the mold structure includes alternately and repeatedly stacked interlayer insulating films and sacrificial films; forming a channel hole passing through the mold structure; forming a vertical channel structure within the channel hole; exposing a surface of the interlayer insulating films by removing the sacrificial films; forming an aluminum oxide film along a surface of the interlayer insulating films; forming a continuous film on the aluminum oxide film; and nitriding the continuous film to form a TiN film.

Abstract: A method of manufacturing a semiconductor device includes forming a mold structure including alternately stacked mold insulating and sacrificial layers on a substrate, forming a vertical structure through the mold structure, forming side openings by removing the sacrificial, forming a preliminary dielectric layer in the side openings, forming a dielectric layer by heat-treating the preliminary dielectric layer, removing a surface layer of the dielectric layer, forming a first conductive layer covering the dielectric layer in the side openings, and forming a second conductive layer covering the first conductive layer and filling the side openings.

Abstract: A method for fabricating a semiconductor device, the method including forming a mold structure on a substrate such that the mold structure includes alternately and repeatedly stacked interlayer insulating films and sacrificial films; forming a channel hole passing through the mold structure; forming a vertical channel structure within the channel hole; exposing a surface of the interlayer insulating films by removing the sacrificial films; forming an aluminum oxide film along a surface of the interlayer insulating films; forming a continuous film on the aluminum oxide film; and nitriding the continuous film to form a TiN film.

Abstract: Provided is an endless rolling apparatus and method, which have improved cooling conditions for producing advanced high strength steel. The endless rolling apparatus includes: a continuous casting machine for casting a slab; and a cooling bed having at least one piece of water-cooling equipment and at least one rolling mill continuously connected to the continuous casting machine, wherein, in the cooling bed, an initial position (S) at which the water-cooling equipment is provided so as to manufacture advanced high strength steel through at least one water-cooling is defined by mathematical formula 1. Here, H is the thickness (mm) of a slab, V is the casting speed (m/sec) of the slab, h is the product thickness (mm), and t is the target arrival time (sec) until entry into the cooling bed.