Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A method of separating an edge portion from a glass substrate includes applying a scoring tool of a scoring apparatus to a glass substrate to cause the scoring tool to score the glass substrate along a score line as the glass substrate moves relative to the scoring apparatus and applying a breaker bar of a breaker apparatus to the glass substrate as the glass substrate moves relative to the breaker bar to separate an edge portion from the glass substrate along the score line.

Abstract: Provided are mixed ligand metal nanoparticle chemical sensors in which metal nanoparticles are encapsulated by at least two kinds of different molecule ligands having a relatively low conductivity and various composition ratios, and a chemical sensor array in which a film of the metal nanoparticle sensor is formed on the substrate. The metal nanoparticle sensor using the mixed ligand improves sensitivity and reaction speed with respect to an analyte, and selectivity with respect to various analytes, and a kind and a composition of a ligand of the mixed ligand constituting the metal nanoparticle sensor are adjusted to allow the high sensitivity nanoparticle sensor to be applied to the sensor array technology, thereby enabling a design of sensor properties as well as systematic access to a configuration of the sensor array the most efficient for the analytes.

Abstract: Provided is a suspended nanowire sensor having good sensing characteristics and suitable for mass production, a method for fabricating the suspended nanowire sensor. The suspended nanowire sensor includes: first and second sensor electrodes formed on upper portions of a substrate and physically separated from each other; and a nanowire sensor material piece extending from the first sensor electrode to the second sensor electrode and physically suspended between the first and second sensor electrodes.

Abstract: Provided is a sensor structure comprising a heater and a temperature sensor at the center of a membrane having a well structure, allowing a temperature to be rapidly controlled with low power, and the object is analyzed using a conductivity change measured at two or more substrate temperatures with a pair of detecting electrode and a detecting layer implemented on the heater, wherein the sensing layer can include a conductive particle and a non-conductive organic composite.

Abstract: A network system and method of testing the terminal status so as to acquire the link status of the wired/wireless terminals associated to the VoIP-based network includes at least one user terminal which transmits a status message in response to a SIP-based Options message and a soft switch which transmits the Option message, determines whether or not the status message has been received, and recognizes whether the user terminal is in a Busy state or an Idle state based on a result of the determination. Since the terminal status can be accurately determined, it is possible to process calls, manage the terminal, and fairly charge the utilization costs to improve the stability and QoS of the network system.

Abstract: Provided is a suspended nanowire sensor having good sensing characteristics and suitable for mass production, a method for fabricating the suspended nanowire sensor. The suspended nanowire sensor includes: first and second sensor electrodes formed on upper portions of a substrate and physically separated from each other; and a nanowire sensor material piece extending from the first sensor electrode to the second sensor electrode and physically suspended between the first and second sensor electrodes.

Abstract: A network system and method of testing the terminal status so as to acquire the link status of the wired/wireless terminals associated to the VoIP-based network includes at least one user terminal which transmits a status message in response to a SIP-based Options message and a soft switch which transmits the Option message, determines whether or not the status message has been received, and recognizes whether the user terminal is in a Busy state or an Idle state based on a result of the determination. Since the terminal status can be accurately determined, it is possible to process calls, manage the terminal, and fairly charge the utilization costs to improve the stability and QoS of the network system.

Abstract: The present invention relates to an electroluminescent device and method of manufacturing the same, capable of reducing the loss of light propagated toward the lateral side of the device and increasing the amount of light propagated to the front of the display to improve the brightness and efficiency of the device, in such a way that a transparent conductive film or a luminescent layer is made of compound having an orientation and is then etched to make the transparent conductive film or the luminescent layer in a protrusion shape. For this, an electroluminescent device comprises a substrate, a first electrode formed on the substrate, a luminescent layer formed on the first electrode, and a second electrode formed on the luminescent layer, wherein at least one of the first electrode, the luminescent layer and the second electrode is formed to have a protrusion at its surface is formed to have a surface of a protrusion shape at its given region.

Abstract: The present invention relates to an electroluminescent device and method of manufacturing the same, capable of reducing the loss of light propagated toward the lateral side of the device and increasing the amount of light propagated to the front of the display to improve the brightness and efficiency of the device, in such a way that a transparent conductive film or a luminescent layer is made of compound having an orientation and is then etched to make the transparent conductive film or the luminescent layer in a protrusion shape. For this, an electroluminescent device comprises a substrate, a first electrode formed on the substrate, a luminescent layer formed on the first electrode, and a second electrode formed on the luminescent layer, wherein at least one of the first electrode, the luminescent layer and the second electrode is formed to have a protrusion at its surface is formed to have a surface of a protrusion shape at its given region.

Abstract: The present invention relates to the transmissive programmable mask for forming biomolecules such as DNA or polymer array by irradiating specific cells with incident lights, and to the method for forming the biomolecules or polymer array using the same.

Abstract: The inventive thin-film DC-driving electroluminescent device (ELD) is characterized by the thin-film current control layer which is inserted between a thin film phosphor layer and metal electrodes. This kind of ELD has the advantages of having a lower operation voltage than that of the conventional thin-film AC ELD and a higher resolution than that of the conventional thin-film/powder hybrid DC ELD. The thin-film current control layer acts as an energy barrier layer which supplies energetic electrons into said phosphor layer by a field-assistant injection of electron, and a current-limiting layer which prevents an electric field breakdown of said electroluminescent device caused by an excess current flow. The current control layer is embodied with a multilayered thin film laminated by an alternate deposition of metal oxides. In another embodiment, the current control layer consists of both an energy barrier layer and a current-limiting layer, separately formed.

Abstract: The present invention relates to an electroluminescent device and method of manufacturing the same, capable of reducing the loss of light propagated toward the lateral side of the device and increasing the amount of light propagated to the front of the display to improve the brightness and efficiency of the device, in such a way that a transparent conductive film or a luminescent layer is made of compound having an orientation and is then etched to make the transparent conductive film or the luminescent layer in a protrusion shape. For this, an electroluminescent device comprises a substrate, a first electrode formed on the substrate, a luminescent layer formed on the first electrode, and a second electrode formed on the luminescent layer, wherein at least one of the first electrode, the luminescent layer and the second electrode is formed to have a protrusion at its surface is formed to have a surface of a protrusion shape at its given region.

Abstract: The inventive thin-film DC-driving electroluminescent device (ELD) is characterized by the thin-film current control layer which is inserted between a thin film phosphor layer and metal electrodes. This kind of ELD has the advantages of having a lower operation voltage than that of the conventional thin-film AC ELD and a higher resolution than that of the conventional thin-film/powder hybrid DC ELD. The thin-film current control layer acts as an energy barrier layer which supplies energetic electrons into said phosphor layer by a field-assistant injection of electron, and a current-limiting layer which prevents an electric field breakdown of said electroluminescent device caused by an excess current flow. The current control layer is embodied with a multilayered thin film laminated by an alternate deposition of metal oxides. In another embodiment, the current control layer consists of both an energy barrier layer and a current-limiting layer, separately formed.

Abstract: A method of fabricating polycrystalline thin films based on IIA-group, IIIA-group, IVA-group, transition, or inner-transition metal sulfides or selenides by surface reaction and vapor phase reaction by using coordination metal compounds, adducted with neutral ligands and H2Z (Z=S, Se) as precursors. The present invention also discloses a method of fabricating metal oxide polycrystalline thin films based on IIA-group, IIIA-group, IVA-group, transition, or inner-transition metal oxides by surface reaction and vapor phase reaction by using coordination metal compounds, adducted with neutral ligands as one of precursors. Main object of the present invention is to provide a method of fabricating high quality EL device using the above technique.