Abstract: A method to form a barrier layer and contact plug using a touch up RIE. In a first embodiment, we form a first barrier layer over the dielectric layer and the substrate in the contact hole. The first barrier layer is comprised of Ta. A second barrier layer is formed over the first barrier layer. The second barrier layer is comprised of TaN or WN. We planarize a first conductive layer to form a first contact plug in the contact hole. We reactive ion etch ( e.g., W touch up etch) the top surfaces using a Cl and B containing etch. Because of the composition of the barrier layers and RIE etch chemistry, the barrier layers are not significantly etched selectively to the dielectric layer. In a second embodiment, a barrier film is comprised of WN.

Abstract: A method of forming a barrier layer and cap comprised of CuSiN for an interconnect. We provide an interconnect opening in a dielectric layer over a semiconductor structure. We form a CuSiN barrier layer over the sidewalls and bottom of the interconnect opening by reacting with the first copper layer. We then form an interconnect over the CuSiN layer filling the interconnect opening. We can form a CuSiN cap layer on the top surface of the interconnect.

Abstract: A method of forming trench openings in a dual damascene trench and via etch process by using a two component hard mask layer, termed a bi-layer, over different intermetal dielectrics, IMD, to solve dual damascene patterning problems, such as, fencing and sub-trench formation. Via first patterning in dual damascene processing is one of the major integration schemes for copper backend of line (BEOL) integration. Via first dual damascene scheme usually uses a hard mask layer deposited on top of an inter-metal dielectric (IMD) film stack. The dual damascene trench etch requires uniform trench depth across wafer after etch. In addition, via top corner profiles need to be well maintained without any fencing or faceting. The present method solves these problems by using a two component hard mask layer, termed a bi-layer, deposited directly on top of an inter-metal dielectric (IMD) film stack.

Abstract: A cooking apparatus comprising: a housing (122); at least one heating unit (170) disposed within and on the periphery of said housing (122), said heating unit (170) radiating substantially radially inwards to the centre of the cooking apparatus; at least one support plate (136) provided above said heating unit, said support plate (136) having an inclined surface for supporting and retaining flat dough for cooking; at least one support plate revolving means, coupled to said support plate (136), for rotating said support plate (136); and a means for maintaining the temperature of the top surface of said dough to allow equal cooking of top and bottom surfaces of said dough.

Abstract: A cooking apparatus comprising: a housing (122); at least one heating unit (170) disposed within and on the periphery of said housing (122), said heating unit (170) radiating substantially radially inwards to the centre of the cooking apparatus; at least one support plate (136) provided above said heating unit, said support plate (136) having an inclined surface for supporting and retaining flat dough for cooking; at least one support plate revolving means, coupled to said support plate (136), for rotating said support plate (136); and a means for maintaining the temperature of the top surface of said dough to al low equal cooking of top and bottom surfaces of said dough.