Patents by Inventor Yong Sik Lim

Yong Sik Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • 2-TERMINAL SEMICONDUCTOR DEVICE USING ABRUPT METAL-INSULATOR TRANSITION SEMICONDUCTOR MATERIAL
    Publication number: 20100193824
    Abstract: Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2 eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.
    Type: Application
    Filed: April 14, 2010
    Publication date: August 5, 2010
    Inventors: Hyun Tak KIM, Doo Hyeb Youn, Byung Gyu Chae, Kwang Yong Kang, Yong Sik Lim, Gyungock Kim, Sunglyul Maeng, Seong Hyun Kim
  • 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material
    Patent number: 7728327
    Abstract: Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.
    Type: Grant
    Filed: December 13, 2004
    Date of Patent: June 1, 2010
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun Tak Kim, Doo Hyeb Youn, Byung Gyu Chae, Kwang Yong Kang, Yong Sik Lim, Gyungock Kim, Sunglyul Maeng, Seong Hyun Kim
  • Current-jump-control circuit including abrupt metal-insulator phase transition device
    Patent number: 6987290
    Abstract: A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.
    Type: Grant
    Filed: June 10, 2004
    Date of Patent: January 17, 2006
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun Tak Kim, Doo Hyeb Youn, Kwang Yong Kang, Byung Gyu Chae, Yong Sik Lim, Seong Hyun Kim, Sungyul Maeng, Gyungock Kim