Patents by Inventor Yong-Sin Chang

Yong-Sin Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Image sensor having an RPO layer containing nitrogen
    Patent number: 7772625
    Abstract: A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.
    Type: Grant
    Filed: October 10, 2006
    Date of Patent: August 10, 2010
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yao Hsiang Liang, Wen-Kung Cheng, Chen-Peng Fan, Ming-Hsien Chen, Richard Chen, Jung-Chen Yang, Wen-Yu Ho, Chao-Keng Li, Yong-Sin Chang, Labo Chang
  • IMAGE SENSORS AND METHODS OF FABRICATING IMAGE SENSORS
    Publication number: 20080083938
    Abstract: A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.
    Type: Application
    Filed: October 10, 2006
    Publication date: April 10, 2008
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yao Hsiang Liang, Wen-Kung Cheng, Chen-Peng Fan, Ming-Hsien Chen, Richard Chen, Jung-Chen Yang, Wen-Yu Ho, Chao-Keng Li, Yong-Sin Chang, Labo Chang