Abstract: A mask for photolithography includes: a transparent substrate; a phase shift pattern on the transparent substrate and configured to change a phase of light; a dielectric layer on the transparent substrate; and a negative refractive-index meta material layer on the dielectric layer.

Abstract: A method of forming a pattern includes: preparing a target substrate including a photoresist layer on a base substrate; aligning a phase shift mask to the target substrate, the phase shift mask including a mask substrate comparted into a first region including a first sub region and second sub regions at sides of the first sub region, and second regions at sides of the first region, the phase shift mask including a phase shift layer on the mask substrate corresponding to the first region; fully exposing the photoresist layer at the first sub region and the second regions by utilizing the phase shift mask; and removing the photoresist layer at the first sub region and the second regions to form first and second photoresist patterns corresponding to the second sub regions. Transmittance of the phase shift layer is selected to fully expose the photoresist layer in the first sub region.

Abstract: A phase shift mask enables much smaller scale of electronic circuit pattern. A phase shift mask comprises a transparent substrate, a phase shift pattern arranged on the transparent substrate to change a phase of light that penetrates the transparent substrate, and a metal coating layer arranged on at least a part of a surface of the phase shift pattern.

Abstract: A mask for photolithography includes: a transparent substrate; a phase shift pattern on the transparent substrate and configured to change a phase of light; a dielectric layer on the transparent substrate; and a negative refractive-index meta material layer on the dielectric layer.

Abstract: A mask for photolithography includes: a transparent substrate; a phase shift pattern on the transparent substrate and configured to change a phase of light; a dielectric layer on the transparent substrate; and a negative refractive-index meta material layer on the dielectric layer.

Abstract: A mask includes a transparent substrate and a light blocking pattern. The light blocking pattern includes a light blocking part and a diffraction pattern. The light blocking part is disposed on the transparent substrate and is configured to block light. The diffraction pattern includes a plurality of protrusion parts and is configured to diffract the light. The plurality of protrusion parts protrudes from a side of the blocking part and is separated from each other.

Abstract: A method of forming a pattern includes: preparing a target substrate including a photoresist layer on a base substrate; aligning a phase shift mask to the target substrate, the phase shift mask including a mask substrate comparted into a first region including a first sub region and second sub regions at sides of the first sub region, and second regions at sides of the first region, the phase shift mask including a phase shift layer on the mask substrate corresponding to the first region; fully exposing the photoresist layer at the first sub region and the second regions by utilizing the phase shift mask; and removing the photoresist layer at the first sub region and the second regions to form first and second photoresist patterns corresponding to the second sub regions. Transmittance of the phase shift layer is selected to fully expose the photoresist layer in the first sub region.

Abstract: A method of forming a pattern includes: preparing a target substrate including a photoresist layer on a base substrate; aligning a phase shift mask to the target substrate, the phase shift mask including a mask substrate comparted into a first region including a first sub region and second sub regions at sides of the first sub region, and second regions at sides of the first region, the phase shift mask including a phase shift layer on the mask substrate corresponding to the first region; fully exposing the photoresist layer at the first sub region and the second regions by utilizing the phase shift mask; and removing the photoresist layer at the first sub region and the second regions to form first and second photoresist patterns corresponding to the second sub regions. Transmittance of the phase shift layer is selected to fully expose the photoresist layer in the first sub region.

Abstract: A method for forming a fine pattern includes forming an etching target material layer on a substrate, forming a first photoresist layer on the etching target material layer, forming a metal pattern on the first photoresist layer, the metal pattern having a plurality of lines and thin film lines alternately arranged, the lines having predetermined linewidth and thickness and are spaced apart from each other by a predetermined distance, exciting surface plasmons in the metal pattern by light irradiation to produce a surface plasmon resonance that exposes a fine first pattern shape in the first photoresist layer, forming a first photoresist pattern by removing the metal pattern and developing the first photoresist layer, and etching the etching target material layer by using the first photoresist pattern as a mask.

Abstract: Provided is a method of manufacturing a display apparatus, the method including forming an amorphous silicon layer on a substrate; changing amorphous silicon in the amorphous silicon layer into crystalline silicon by irradiating the amorphous silicon with a laser beam emitted through a phase shift mask; and forming a display device, the phase shift mask including a base substrate; a barrier layer on the base substrate and including a plurality of transmissive portions which are spaced apart from each other in a first direction; and phase shift portions which alternately fill the plurality of transmissive portions in the first direction.

Abstract: A display device in a display panel; a backlight unit configured to provide light to the display panel, the display pan& being arranged at a side of a first surface of the backlight unit; and a first light adjustment unit configured to be arranged at a side of a second surface of the backlight unit opposite to the first surface of the backlight unit, the first light adjustment unit including a plurality of reflection portions, reflection portions of the plurality of reflection portions being rotatable so as to be switchable between a light transmission mode and a light reflection mode.

Abstract: A mask including: a transparent substrate and a light blocking layer thereon. The transparent substrate includes a first transmitting portion and a second transmitting portion each configured to pass light, and a light blocking portion configured to block light. The first transmitting portion includes a first transmitting region configured to pass light and a first light blocking region configured to block light, and area centers of the first transmitting region and the first light blocking region substantially coincide. The second transmitting portion includes a second transmitting region configured to pass light and a second light blocking region configured to block light, and area centers of the second transmitting region and the second light blocking region substantially coincide, so that the first transmitting portion is configured to pass light of a greater intensity and the second transmitting portion is configured to pass light of a lesser intensity.

Abstract: A phase shift device includes a phase shift mask which includes a transparent substrate, and a phase shift pattern which is provided on the transparent substrate, and includes a first area having a first thickness, a second area having a second thickness which is less than the first thickness, a first opening having a first opening width and defined at the first area, and a second opening having a second opening width and defined at the second area.

Abstract: A phase shift mask enables much smaller scale of electronic circuit pattern. A phase shift mask comprises a transparent substrate, a phase shift pattern arranged on the transparent substrate to change a phase of light that penetrates the transparent substrate, and a metal coating layer arranged on at least a part of a surface of the phase shift pattern.

Abstract: A mask includes a transparent substrate and a light blocking pattern. The light blocking pattern includes a light blocking part and a diffraction pattern. The light blocking part is disposed on the transparent substrate and is configured to block light. The diffraction pattern includes a plurality of protrusion parts and is configured to diffract the light. The plurality of protrusion parts protrudes from a side of the blocking part and is separated from each other.

Abstract: Provided is a method of manufacturing a display apparatus, the method including forming an amorphous silicon layer on a substrate; changing amorphous silicon in the amorphous silicon layer into crystalline silicon by irradiating the amorphous silicon with a laser beam emitted through a phase shift mask; and forming a display device, the phase shift mask including a base substrate; a barrier layer on the base substrate and including a plurality of transmissive portions which are spaced apart from each other in a first direction; and phase shift portions which alternately fill the plurality of transmissive portions in the first direction.

Abstract: A mask for photolithography includes: a transparent substrate; a phase shift pattern on the transparent substrate and configured to change a phase of light; a dielectric layer on the transparent substrate; and a negative refractive-index meta material layer on the dielectric layer.

Abstract: An image display system includes a plurality of unit display devices, an image data buffer, and a location recognition unit. The location recognition unit recognizes the locations of the unit display devices and provides the image data buffer with location data. When the image data driver determines that the unit display devices are arranged in a first pattern, the plurality of unit display devices together displays a first image that corresponds to the first pattern.

Abstract: A method of forming a pattern includes: preparing a target substrate including a photoresist layer on a base substrate; aligning a phase shift mask to the target substrate, the phase shift mask including a mask substrate comparted into a first region including a first sub region and second sub regions at sides of the first sub region, and second regions at sides of the first region, the phase shift mask including a phase shift layer on the mask substrate corresponding to the first region; fully exposing the photoresist layer at the first sub region and the second regions by utilizing the phase shift mask; and removing the photoresist layer at the first sub region and the second regions to form first and second photoresist patterns corresponding to the second sub regions. Transmittance of the phase shift layer is selected to fully expose the photoresist layer in the first sub region.

Abstract: A display device in a display panel; a backlight unit configured to provide light to the display panel, the display pan& being arranged at a side of a first surface of the backlight unit; and a first light adjustment unit configured to be arranged at a side of a second surface of the backlight unit opposite to the first surface of the backlight unit, the first light adjustment unit including a plurality of reflection portions, reflection portions of the plurality of reflection portions being rotatable so as to be switchable between a light transmission mode and a light reflection mode.