Abstract: An ion implantation apparatus comprises an ion beam source for generating an initial ion beam, a bundled ion beam generator adapted to change the initial ion beam into a bundled ion beam based on a predetermined frequency to pass the bundled ion beam for a first time while passing the initial ion beam for a second time, a beam line for accelerating the ion beam having passed through the ion beam generator, and an end station for arranging a wafer therein to allow the ion beam accelerated by the beam line to be implanted in the wafer, the end station operating to move the wafer in a direction perpendicular to an ion beam implantation direction, so as to implant the bundled ion beam in a first region of the wafer and the initial ion beam in a second region of the wafer.

Abstract: Disclosed herein is a memory device having an increased level of integration with a simplified method of manufacture.

Abstract: A semiconductor device having recess gates and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having inverse triangular recesses formed therein; a gate insulating film having a designated thickness formed on the semiconductor substrate; gate electrodes formed on the gate insulating film so that the gate electrodes fill the inverse triangular recesses and protrude from the surface of the semiconductor substrate; and first and second junction regions formed in the semiconductor substrate and opposed to each other so that the corresponding one of the gate electrodes is interposed therebetween.

Abstract: An apparatus and a method are provided for automatically converting a user interface (UI). A Bluetooth-automatic authentication function is performed so as to automatically convert a current set UI to a stored UI corresponding to an authenticated Bluetooth terminal. In order to automatically convert UI of a terminal which is automatically authenticated in a short communication mode, at least one terminal ID for automatic authentication and UI configuration information corresponding to the terminal ID are set. When a terminal ID for automatic authentication is searched in a short distance communicating mode, a terminal corresponding to the searched terminal ID is automatically authenticated. The present UI configuration information corresponding to the automatically authenticated terminal is automatically applied to a current terminal UI, so that a current UI such as a main screen and a main menu category can be automatically converted to a preset UI corresponding to each authenticated Bluetooth terminal.

Abstract: Disclosed herein is an apparatus and method for partial ion implantation. The apparatus includes a wafer support, an ion beam irradiator capable of generating and irradiating an ion beam entering the wafer, and an ion beam exposure adjustor to adjust exposure of the wafer with respect to the ion beam according to regions of the wafer by setting an exposure opening via combination of ion beam shields for blocking the ion beam with respect to the wafer. The exposure opening enables the wafer to be partially exposed to the ion beam irradiated therethrough. With this apparatus, effective partial ion implantation can be performed to compensate variation of a threshold voltage Vt in a channel of a transistor, thereby providing more uniform characteristics of the transistor.

Abstract: A method of fabricating a semiconductor device includes forming a mask pattern for exposing a region of a semiconductor substrate. Dopant ions are implanted into the exposed region of the semiconductor substrate at a tilt angle of approximately 4.4° to 7°.

Abstract: Disclosed herein is a memory device having an increased level of integration with a simplified method of manufacture The memory device includes: a plurality of word lines and a plurality of bit lines each regularly arranged, and a plurality of unit memory cells each formed at an intersection between an associated one of the word lines and an associated one of the bit lines, wherein each unit memory cell includes a capacitor connected to one of the bit lines and a threshold voltage switching device comprising two terminals, one terminal being connected to the capacitor and the other terminal being connected to one of the bit lines, the threshold voltage switching device being capable of switching current flow at a specific threshold voltage via a rapid variation in resistance depending upon a voltage applied through the word line and the bit line, wherein the capacitor is capable of accumulating electric charges supplied from the bit line based on a switching operation of the threshold voltage switching device

Abstract: An ion implantation apparatus includes an ion beam source for generating an ion beam; an implantation energy controller disposed on a path of the ion beam for controlling the ion implantation energy of the ion beam so that an ion beam having a first implantation energy is created for a first period of time and an ion beam having a second implantation energy is created for a second period of time; a beam line for accelerating the ion beam; and an end station for mounting a substrate, into which the ion beam accelerated by the beam line is implanted onto the substrate.

Abstract: An ion implantation apparatus comprises an ion beam source for generating an initial ion beam, a bundled ion beam generator adapted to change the initial ion beam into a bundled ion beam based on a predetermined frequency to pass the bundled ion beam for a first time while passing the initial ion beam for a second time, a beam line for accelerating the ion beam having passed through the ion beam generator, and an end station for arranging a wafer therein to allow the ion beam accelerated by the beam line to be implanted in the wafer, the end station operating to move the wafer in a direction perpendicular to an ion beam implantation direction, so as to implant the bundled ion beam in a first region of the wafer and the initial ion beam in a second region of the wafer.

Abstract: An oxide pattern forming method comprises forming an oxide layer on a semiconductor substrate, implanting boron ions of not less than 1.0×1016 atoms/cm2 onto the oxide layer in a given region, and wet-etching the oxide layer in the remaining region where the boron ions are not implanted.

Abstract: Disclosed is an electrostatic discharge device for a portable terminal including a main body mounted within the portable terminal. The main body includes a conductor coated with an insulator around the external circumference thereof. In addition, the main body also includes at least one electricity reception portion formed by partially removing the insulator so as to expose the conductor, and an electricity release portion formed by an end of the insulator so as to expose the conductor, wherein the electrostatic electricity generated within the terminal is applied to the electricity reception portion and guided through the conductor. The electrostatic discharge device can be easily installed within the terminal at or adjacent to a position where electrostatic electricity is generated, thereby contributing to miniaturization of a portable terminal.

Abstract: Disclosed herein is an apparatus and method for partial ion implantation. The apparatus includes a wafer support, an ion beam irradiator capable of generating and irradiating an ion beam entering the wafer, and an ion beam exposure adjustor to adjust exposure of the wafer with respect to the ion beam according to regions of the wafer by setting an exposure opening via combination of ion beam shields for blocking the ion beam with respect to the wafer. The exposure opening enables the wafer to be partially exposed to the ion beam irradiated therethrough. With this apparatus, effective partial ion implantation can be performed to compensate variation of a threshold voltage Vt in a channel of a transistor, thereby providing more uniform characteristics of the transistor.

Abstract: A semiconductor device having recess gates and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having inverse triangular recesses formed therein; a gate insulating film having a designated thickness formed on the semiconductor substrate; gate electrodes formed on the gate insulating film so that the gate electrodes fill the inverse triangular recesses and protrude from the surface of the semiconductor substrate; and first and second junction regions formed in the semiconductor substrate and opposed to each other so that the corresponding one of the gate electrodes is interposed therebetween.

Abstract: The invention provides a method and compositions for controlling food borne enteric bacterial pathogens in animals. Populations of enteropathogenic bacteria may be substantially reduced or eliminated by treatment of animals with an effective amount of 2-nitropropanol, 2-nitroethane or 2-nitroethanol. The compounds may be administered orally, providing a reduction in the populations of the enteropathogenic bacteria in the alimentary tract of the animal, or they may be applied externally onto the animal to reduce the populations of any such bacteria which may be present as contaminants on the surface of the animal. The method and compositions are particularly useful for the control of Salmonella species, enteropathogenic Escherichia coli, Campylobacter species, and Listeria monocytogenes.