Abstract: A coil component includes a body having a first surface, and a first end surface and a second end surface connected to the first surface and opposing each other in a length direction; a support substrate disposed inside the body; a coil portion comprising a first coil pattern and first and second lead-out patterns, each disposed on a first surface of the support substrate; first and second slit portions, respectively defined on edge portions of the first surface of the body to expose the first and second lead-out patterns; and first and second external electrodes disposed on the first and second slit portions to be connected to the first and second lead-out patterns. At least one of the first and second lead-out patterns has a thickness greater than a thickness of each of the first coil pattern and the first dummy lead-out pattern.

Abstract: A coil component is provided. The coil component includes a body having fifth and sixth surfaces opposing each other, first and second surfaces respectively connecting the fifth and sixth surfaces of the body and opposing each other, and third and fourth surfaces respectively connecting the first and second surfaces of the body and opposing each other in one direction, a recess disposed in an edge between one of the first and second surfaces of the body and the sixth surface of the body, a coil portion disposed inside the body and exposed through the recess, and an external electrode including a connection portion disposed in the recess and connected to the coil portion, and a pad portion disposed on one surface of the body. A length of the pad portion in the one direction is greater than a length of the connection portion in the one direction.

Abstract: Provided are an apparatus for processing a substrate and a method for measuring a temperature of the substrate. The apparatus for processing the substrate includes a temperature measurement part and a light-transmitting shield plate. The temperature measurement part includes a light source, a light receiving part configured to receive reflected light reflected by the substrate or the shield plate among the light irradiated from the light source, and a radiant light emitted from the substrate to measure a quantity of the reflected light and an intensity of the radiant light and a temperature calculation part configured to calculate the temperature of the substrate, to which a contamination level of the shield plate is reflected, by using the quantity of the reflected light and the intensity of the radiant light.

Abstract: Provided are an apparatus for processing a substrate and a method for measuring a temperature of the substrate. The apparatus for processing the substrate includes a temperature measurement part and a light-transmitting shield plate. The temperature measurement part includes a light source, a light receiving part configured to receive reflected light reflected by the substrate or the shield plate among the light irradiated from the light source, and a radiant light emitted from the substrate to measure a quantity of the reflected light and an intensity of the radiant light and a temperature calculation part configured to calculate the temperature of the substrate, to which a contamination level of the shield plate is reflected, by using the quantity of the reflected light and the intensity of the radiant light.

Abstract: A substrate treatment method in accordance with an exemplary embodiment includes: heating a substrate, for a substrate treatment process, so that a temperature of the substrate reaches a target temperature; calculating the temperature of the substrate using a sensor located facing the substrate while heating the substrate; and controlling an operation of a heating part configured to heat the substrate according to the temperature calculated from the calculating the temperature, wherein the calculating the temperature comprises: measuring a total radiant energy (Et) radiated from the substrate using the sensor; calculating a corrected total emissivity (?t0) by applying a correction value for correcting the total emissivity (?t) which is the emissivity of the radiant energy (Et); and calculating the temperature (Ts) of the substrate using the total radiant energy (Et) and the corrected total emissivity (?t0).

Abstract: A substrate treatment method in accordance with an exemplary embodiment includes: heating a substrate, for a substrate treatment process, so that a temperature of the substrate reaches a target temperature; calculating the temperature of the substrate using a sensor located facing the substrate while heating the substrate; and controlling an operation of a heating part configured to heat the substrate according to the temperature calculated from the calculating the temperature, wherein the calculating the temperature comprises: measuring a total radiant energy (Et) radiated from the substrate using the sensor; calculating a corrected total emissivity (?t0) by applying a correction value for correcting the total emissivity (?t) which is the emissivity of the radiant energy (Et); and calculating the temperature (Ts) of the substrate using the total radiant energy (Et) and the corrected total emissivity (?t0).

Abstract: The present invention relates to an improved chamber for a module IC handler including a pre-heater for heating module ICs to a set temperature. A receiving piece is installed in a heating chamber and is formed with a plurality of receiving grooves for receiving a carrier holding module ICs. An operating piece is disposed the chamber adjacent the receiving piece. An upper surface the operating piece includes a plurality of receiving grooves of the same interval as the receiving grooves of the receiving piece. In operation, the operating piece raises a module IC carrier from a first groove on the receiving piece and translates the module IC carrier by a distance roughly equivalent to the thickness of the module IC carrier. After translating the module IC carrier, the operating piece lowers the module IC carrier into an adjacent second groove on the receiving piece.