Abstract: The present disclosure relates to a power control device for temperature control capable of phase control compensation according to power fluctuations, a thermal processing system having the same, and a temperature control method for the thermal processing system. The power control device for temperature control includes a power control unit configured to control an amount of power supplied to a heating source by controlling a phase of AC power supplied from a power source and a power measurement unit connected to the power source and configured to measure the AC power, wherein the power control unit controls the phase of the AC power by compensating a phase angle according to a difference between a reference power value and the measured value measured by the power measurement unit.

Abstract: Provided are an apparatus for processing a substrate and a method for measuring a temperature of the substrate. The apparatus for processing the substrate includes a temperature measurement part and a light-transmitting shield plate. The temperature measurement part includes a light source, a light receiving part configured to receive reflected light reflected by the substrate or the shield plate among the light irradiated from the light source, and a radiant light emitted from the substrate to measure a quantity of the reflected light and an intensity of the radiant light and a temperature calculation part configured to calculate the temperature of the substrate, to which a contamination level of the shield plate is reflected, by using the quantity of the reflected light and the intensity of the radiant light.

Abstract: Provided are an apparatus for processing a substrate and a method for measuring a temperature of the substrate. The apparatus for processing the substrate includes a temperature measurement part and a light-transmitting shield plate. The temperature measurement part includes a light source, a light receiving part configured to receive reflected light reflected by the substrate or the shield plate among the light irradiated from the light source, and a radiant light emitted from the substrate to measure a quantity of the reflected light and an intensity of the radiant light and a temperature calculation part configured to calculate the temperature of the substrate, to which a contamination level of the shield plate is reflected, by using the quantity of the reflected light and the intensity of the radiant light.

Abstract: A substrate treatment method in accordance with an exemplary embodiment includes: heating a substrate, for a substrate treatment process, so that a temperature of the substrate reaches a target temperature; calculating the temperature of the substrate using a sensor located facing the substrate while heating the substrate; and controlling an operation of a heating part configured to heat the substrate according to the temperature calculated from the calculating the temperature, wherein the calculating the temperature comprises: measuring a total radiant energy (Et) radiated from the substrate using the sensor; calculating a corrected total emissivity (?t0) by applying a correction value for correcting the total emissivity (?t) which is the emissivity of the radiant energy (Et); and calculating the temperature (Ts) of the substrate using the total radiant energy (Et) and the corrected total emissivity (?t0).

Abstract: A substrate treatment method in accordance with an exemplary embodiment includes: heating a substrate, for a substrate treatment process, so that a temperature of the substrate reaches a target temperature; calculating the temperature of the substrate using a sensor located facing the substrate while heating the substrate; and controlling an operation of a heating part configured to heat the substrate according to the temperature calculated from the calculating the temperature, wherein the calculating the temperature comprises: measuring a total radiant energy (Et) radiated from the substrate using the sensor; calculating a corrected total emissivity (?t0) by applying a correction value for correcting the total emissivity (?t) which is the emissivity of the radiant energy (Et); and calculating the temperature (Ts) of the substrate using the total radiant energy (Et) and the corrected total emissivity (?t0).

Abstract: The present invention relates to an improved chamber for a module IC handler including a pre-heater for heating module ICs to a set temperature. A receiving piece is installed in a heating chamber and is formed with a plurality of receiving grooves for receiving a carrier holding module ICs. An operating piece is disposed the chamber adjacent the receiving piece. An upper surface the operating piece includes a plurality of receiving grooves of the same interval as the receiving grooves of the receiving piece. In operation, the operating piece raises a module IC carrier from a first groove on the receiving piece and translates the module IC carrier by a distance roughly equivalent to the thickness of the module IC carrier. After translating the module IC carrier, the operating piece lowers the module IC carrier into an adjacent second groove on the receiving piece.