Abstract: A display may include flexible substrate, a blocking layer on the flexible substrate, a pixel on the flexible substrate and the blocking layer, and a scan line, a data line, a driving voltage line, and an initialization voltage line connected to the pixel. The pixel may include an organic light emitting diode, a switching transistor connected to the scan line, and a driving transistor to apply a current to the organic light emitting diode. The blocking layer is in an area that overlaps the switching transistor on a plane, and between the switching transistor and the flexible substrate, and receives a voltage through a contact hole that exposes the blocking layer.

Abstract: An optical imaging system includes a first lens, a second lens, a third lens, a fourth lens, a fifth lens, and a sixth lens sequentially disposed on an optical axis from an object side toward an image side. A distance from an object-side surface of the first lens to an imaging plane of an image sensor is TTL, an overall focal length of an optical system including the first to sixth lenses is F, and TTL/F?0.83. An optical axis distance between the second lens and the third lens is D23, an optical axis distance between the third lens and the fourth lens is D34, and 2.2<D23/D34<5.4.

Abstract: A display device includes a semiconductor layer positioned on a substrate and including a driving transistor and a plurality of transistors; a gate conductive layer positioned on the semiconductor layer; and a data conductive layer positioned on the gate conductive layer. The driving transistor has a linear shape in which a plurality of grooves are formed.

Abstract: An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a first buffer layer on the substrate; a first semiconductor layer on the first buffer layer; a first gate insulating layer on the first semiconductor layer; a first gate electrode and a blocking layer on the first gate insulating layer; a second buffer layer on the first gate electrode; a second semiconductor layer on the second buffer layer; a second gate insulating layer on the second semiconductor layer; and a second gate electrode on the second gate insulating layer.

Abstract: Provided are an apparatus for producing inorganic powder, and a method of producing inorganic powder by using such. The apparatus includes a vaporization part where a condensed-phase precursor is vaporized to obtain a gas-phase precursor, a partial precipitation part where the gas-phase precursor obtained in the vaporization part is partially precipitated to a condensed phase, and a reaction part where the gas-phase precursor remaining after being partially precipitated to a condensed phase in the partial precipitation part reacts with a reaction gas to obtain inorganic powder. An equilibrium vapor pressure of the gas-phase precursor in the partial precipitation part is lower than a vapor pressure of the gas-phase precursor obtained in the vaporization part, and an equilibrium vapor pressure of the precursor in the reaction part is equal to or higher than a vapor pressure of the gas-phase precursor partially precipitated to a condensed phase in the partial precipitation part.

Abstract: Provided are an apparatus for producing inorganic powder, and a method of producing inorganic powder by using such. The apparatus includes a vaporization part where a condensed-phase precursor is vaporized to obtain a gas-phase precursor, a partial precipitation part where the gas-phase precursor obtained in the vaporization part is partially precipitated to a condensed phase, and a reaction part where the gas-phase precursor remaining after being partially precipitated to a condensed phase in the partial precipitation part reacts with a reaction gas to obtain inorganic powder. An equilibrium vapor pressure of the gas-phase precursor in the partial precipitation part is lower than a vapor pressure of the gas-phase precursor obtained in the vaporization part, and an equilibrium vapor pressure of the precursor in the reaction part is equal to or higher than a vapor pressure of the gas-phase precursor partially precipitated to a condensed phase in the partial precipitation part.

Abstract: Provided are an apparatus for producing inorganic powder, and a method of producing inorganic powder by using such. The apparatus includes a vaporization part where a condensed-phase precursor is vaporized to obtain a gas-phase precursor, a partial precipitation part where the gas-phase precursor obtained in the vaporization part is partially precipitated to a condensed phase, and a reaction part where the gas-phase precursor remaining after being partially precipitated to a condensed phase in the partial precipitation part reacts with a reaction gas to obtain inorganic powder. An equilibrium vapor pressure of the gas-phase precursor in the partial precipitation part is lower than a vapor pressure of the gas-phase precursor obtained in the vaporization part, and an equilibrium vapor pressure of the precursor in the reaction part is equal to or higher than a vapor pressure of the gas-phase precursor partially precipitated to a condensed phase in the partial precipitation part.