Abstract: A data receiving device includes a clock receiver and a plurality of data receivers. The clock receiver is configured to generate a plurality of internal clock signals from a clock signal and a complementary clock signal based on a switching enable signal. The plurality of data receivers are configured to receive data and a reference voltage and compare the data with the reference voltage in synchronization with the plurality of internal clock signals, respectively, to generate first internal data. Among the plurality of data receivers, a data receiver receiving an internal clock signal, of which a logic level transitions signals when a logic level of the switching enable signal transitions, is configured to change a voltage level of the reference voltage when the logic level of the switching enable signal transitions.

Abstract: A data receiving device includes a clock receiver and a plurality of data receivers. The clock receiver is configured to generate a plurality of internal clock signals from a clock signal and a complementary clock signal based on a switching enable signal. The plurality of data receivers are configured to receive data and a reference voltage and compare the data with the reference voltage in synchronization with the plurality of internal clock signals, respectively, to generate first internal data. Among the plurality of data receivers, a data receiver receiving an internal clock signal, of which a logic level transitions signals when a logic level of the switching enable signal transitions, is configured to change a voltage level of the reference voltage when the logic level of the switching enable signal transitions.

Abstract: A receiver circuit receives a signal from a semiconductor device. The receiver circuit includes an input buffer including a first plurality of transistors, the input buffer being configured to detect a fabrication condition of the receiver circuit, generate a control signal according to the detected fabrication condition, and control a gain of an input signal by adjusting a number of operating transistors among the first plurality of transistors in response to the control signal; and a latch circuit configured to latch an output signal of the input buffer, and adjust threshold voltages of a second plurality of transistors in response to a test signal.

Abstract: An image sensor includes a pixel array of pixels arranged in one or more rows and one or more columns, the pixel array configured to generate an image based on light being incident on one or more pixels of the pixel array. The image sensor includes pixel load circuitry connected to one column of pixels and including transistors serially connected to each other. The image sensor includes switches connected in parallel to separate, respective nodes between adjacent transistors. The image sensor includes image sensor processing circuitry configured to receive, from image processor circuitry, gain information indicating an intensity of light concurrently with an image being generated by the image sensor, and control at least one switch of the plurality of switches to be turned on/off to change an electrical path of a current that passes through the pixel load circuitry, based on the gain information.

Abstract: An energy storage device for uniformly controlling internal temperature of a container by controlling a flow of a cooling air current includes: racks for accommodating a plurality of battery packs; a container for accommodating the racks; an access floor provided at a lower part of the container for supplying a cooling air current to the racks through supply openings; and a distribution plate provided under the access floor to distribute an amount of the cooling air current that is supplied from under the access floor.

Abstract: A receiver circuit receives a signal from a semiconductor device. The receiver circuit includes an input buffer including a first plurality of transistors, the input buffer being configured to detect a fabrication condition of the receiver circuit, generate a control signal according to the detected fabrication condition, and control a gain of an input signal by adjusting a number of operating transistors among the first plurality of transistors in response to the control signal; and a latch circuit configured to latch an output signal of the input buffer, and adjust threshold voltages of a second plurality of transistors in response to a test signal.

Abstract: An amplification circuit is provided. The amplification circuit may include an amplification stage configured to amplify a first signal and a second signal, and generate third and fourth signals while in a first operation period. The amplification circuit may include a latch stage configured to latch the third and fourth signals while in a in a second operation period. The amplification circuit may supply a low voltage to the amplification stage during the first operation period, the low voltage to the latch stage during the second operation period, a high voltage to the amplification stage during the first operation period, and the high voltage to the latch stage during the second operation period.

Abstract: A charge pump provides an output voltage with reduced voltage ripple. The charge pump includes a first capacitor, a second capacitor, and a control circuit. The control circuit charges the first capacitor to one of a first voltage and a second voltage and the second capacitor to the other one of the first and second voltages using differential clock signals and an input voltage during each clock phase and outputs the higher one of the first and second voltages as an output voltage.

Abstract: An image processing apparatus including: a display configured to display an image of content; a storage configured to store information about the content; a communicator configured to communicate with an external apparatus that provides information about recommendation to the content; and at least one processor configured to determine rating information predicted with regard to the content, store the rating information in the storage, receive rating information updated with regard to the content from the external apparatus in response to a user's request, and provide recommendation information about the content based on the predicted rating information stored in the storage and the updated rating information received from the external apparatus.

Abstract: The present disclosure relates to a method for measuring electrical conductivity and a system for measuring electrical conductivity using the same. The method includes obtaining a cell constant of a conductance cell using a conductivity standard solution, pouring a solution desired to be measured in the conductance cell, and applying predetermined direct current (DC) voltages to electrodes, disposed in the conductance cell, in a manner of changing the predetermined DC voltages in stages at each preset time (t), obtaining resistance of the solution, as a slope, from a linear relationship between the voltage and a peak current, measured for each voltage, and calculating electrical conductivity of the solution using the cell constant and the resistance of the solution.

Abstract: A charge pump provides an output voltage with reduced voltage ripple. The charge pump includes a first capacitor, a second capacitor, and a control circuit. The control circuit charges the first capacitor to one of a first voltage and a second voltage and the second capacitor to the other one of the first and second voltages using differential clock signals and an input voltage during each clock phase and outputs the higher one of the first and second voltages as an output voltage.

Abstract: An electronic device with wireless communication capability including at least one antenna, a detection module, and a setting module. The detection module detects an amount of a current returning from the at least one antenna. The setting module sets at least one user interface corresponding to the detected amount of the current, and when the detected amount of current is below a threshold, abnormal operation is indicated. The amount of current returning can be affected by devices sufficiently close to interfere with the transmissive capabilities.

Abstract: In a method of manufacturing a semiconductor device, a split gate structure is formed on a cell region of a substrate including the cell region and a logic region. The logic region has a high voltage region, an ultra high voltage region and a low voltage region, and the split gate structure includes a first gate insulation layer pattern, a floating gate, a tunnel insulation layer pattern and a control gate. A spacer layer is formed on the split gate structure and the substrate. The spacer layer is etched to form a spacer on a sidewall of the split gate structure and a second gate insulation layer pattern on the ultra high voltage region of the substrate. A gate electrode is formed on each of the high voltage region of the substrate, the second gate insulation layer pattern, and the low voltage region of the substrate.

Abstract: One aspect of the present invention provides an energy storage device for uniformly controlling internal temperature of a container by controlling a flow of a cooling air current. An energy storage device according to an exemplary embodiment of the present invention includes: racks for accommodating a plurality of battery packs; a container for accommodating the racks; an access floor provided at a lower part of the container for supplying a cooling air current to the racks through supply openings; and a distribution plate provided under the access floor to distribute an amount of the cooling air current that is supplied from under the access floor.

Abstract: An electronic device with wireless communication capability including at least one antenna, a detection module, and a setting module. The detection module detects an amount of a current returning from the at least one antenna. The setting module sets at least one user interface corresponding to the detected amount of the current, and when the detected amount of current is below a threshold, abnormal operation is indicated. The amount of current returning can be affected by devices sufficiently close to interfere with the transmissive capabilities.

Abstract: In a method of manufacturing a semiconductor device, a split gate structure is formed on a cell region of a substrate including the cell region and a logic region. The logic region has a high voltage region, an ultra high voltage region and a low voltage region, and the split gate structure includes a first gate insulation layer pattern, a floating gate, a tunnel insulation layer pattern and a control gate. A spacer layer is formed on the split gate structure and the substrate. The spacer layer is etched to form a spacer on a sidewall of the split gate structure and a second gate insulation layer pattern on the ultra high voltage region of the substrate. A gate electrode is formed on each of the high voltage region of the substrate, the second gate insulation layer pattern, and the low voltage region of the substrate.

Abstract: Provided are a scan data processing method and apparatus. The method includes: performing a wireless communication connection with a predetermined user device during a scan mode; detecting user profile information corresponding to a user address of the predetermined user device; and controlling scan data based on the user profile information.

Abstract: The present disclosure relates to a method for measuring electrical conductivity and a system for measuring electrical conductivity using the same. The method includes obtaining a cell constant of a conductance cell using a conductivity standard solution, pouring a solution desired to be measured in the conductance cell, and applying predetermined direct current (DC) voltages to electrodes, disposed in the conductance cell, in a manner of changing the predetermined DC voltages in stages at each preset time (t), obtaining resistance of the solution, as a slope, from a linear relationship between the voltage and a peak current, measured for each voltage, and calculating electrical conductivity of the solution using the cell constant and the resistance of the solution.

Abstract: A semiconductor device includes an active region in a substrate, first to third gate structures crossing the active region and sequentially arranged parallel to each other, a first doped region in the active region between the first and second gate structures and having a first horizontal width and a first depth, and a second doped region in the active region between the second and third gate structures and having a second horizontal width and a second depth. The second horizontal width is larger than the first horizontal width and the second depth is shallower than the first depth. A distance between the first and second gate structures adjacent to each other is smaller than that between the second and third gate structures adjacent to each other. Related fabrication methods are also described.

Abstract: An image sensor includes a delta-sigma analog-to-digital converter (ADC) including a delta-sigma modulator (DSM) and a voltage adjusting circuit. The DSM is configured to perform delta-sigma modulation on an analog signal from a unit pixel. The delta-sigma ADC is configured to convert the analog signal to a digital signal. The voltage adjusting circuit includes a replica inverter having a same configuration as at least one inverter included in the DSM. The voltage adjusting circuit is configured to adjust a power supply voltage and an input voltage provided to the at least one inverter based on a current flowing in the replica inverter.