Abstract: A plasma generating apparatus according to embodiments of the inventive concept, which provides plasma to a biological material, includes a housing configured to provide an inner space in which plasma is generated, a ground electrode coupled to one side of the housing, a power electrode coupled to the other side of the housing, and a controller configured to control a generation mode of the plasma. The generation mode includes a first mode in which the plasma is provided to the biological material while generating the plasma and a second mode in which the plasma is generated in the housing, and then the generated plasma is provided to the biological material.

Abstract: A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.

Abstract: Provided herein an apparatus for generating plasma, the apparatus including a nozzle array, first electrode, and housing. The nozzle discharges plasma. The first electrode is disposed to surround the nozzle array. The housing is disposed to surround the nozzle array and first electrode. The nozzle includes a plurality of nozzles disposed adjacent to one another and in the form of an array, each nozzle configured to discharge plasma. Therefore, it is possible to generate a large size plasma evenly and stably.

Abstract: A plasma generating apparatus according to embodiments of the inventive concept, which provides plasma to a biological material, includes a housing configured to provide an inner space in which plasma is generated, a ground electrode coupled to one side of the housing, a power electrode coupled to the other side of the housing, and a controller configured to control a generation mode of the plasma. The generation mode includes a first mode in which the plasma is provided to the biological material while generating the plasma and a second mode in which the plasma is generated in the housing, and then the generated plasma is provided to the biological material.

Abstract: Provided herein is a microwave device using a magnetic material nano wire array and a manufacturing method thereof, the device including a template having a nano hole array filled with a metal magnetic material.

Abstract: Provided herein is a plasma system including a nozzle including an outer circumference exposed towards outside, an inner circumference facing the outer circumference and touching gas, and an exit from which the gas is sprayed; a first electrode formed on a portion of the outer circumference or inner circumference; and a second electrode formed on a portion of the outer circumference and distanced from the first electrode; wherein the first electrode is electrically connected to a first power having a first voltage, and the second electrode is electrically connected to a second power having a second voltage that is different from the first voltage, and the second electrode is formed closer to the exit than the first electrode.

Abstract: Provided herein an apparatus for generating plasma, the apparatus including a nozzle array, first electrode, and housing. The nozzle discharges plasma. The first electrode is disposed to surround the nozzle array. The housing is disposed to surround the nozzle array and first electrode. The nozzle includes a plurality of nozzles disposed adjacent to one another and in the form of an array, each nozzle configured to discharge plasma. Therefore, it is possible to generate a large size plasma evenly and stably.

Abstract: Provided herein is a microwave device using a magnetic material nano wire array and a manufacturing method thereof, the device including a template having a nano hole array filled with a metal magnetic material.

Abstract: Provided herein is a vibrator that includes a mesh structure and sprays a liquid material through the mesh structure and a manufacturing method thereof, the vibrator including the mesh structure including a vibrator structure including a hollow configured to introduce fluid from outside; a mesh structure configured to touch the hollow and include a porous mesh including a plurality of holes; and an electrode unit configured to apply a voltage for causing vibration of the vibrator structure to the vibrator, wherein the vibrator structure and mesh structure are configured as one integrated object, and the voltage is a direct voltage or alternating voltage.

Abstract: A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.

Abstract: Provided are a photomultiplier and a manufacturing method thereof. The manufacturing method thereof may include forming a mask layer on an active region of a substrate doped with a first conductive type, ion implanting a second conductive type impurity opposite to the first conductive type into the substrate to form a first doped region in the active region under the mask layer and an non-active region exposed from the mask layer, forming a device isolation layer on the non-active region, removing the mask layer, and ion implanting the second conductive type impurity having a concentration higher than that of the first doped region into an upper portion of the first doped region in the active region to form a second doped region shallower than the first doped region.

Abstract: Disclosed is an optical structure formed in an upper side of a semiconductor photomultiplier having a plurality of microcells. The optical structure includes: a first dielectric body formed in an upper side of a dead area between light receiving areas of the respective microcells and having a cross-sectional structure in which a lower side is wider than an upper side; and a second dielectric body formed in the upper side of the light receiving area of each microcell and having a cross-sectional structure in which a lower side is narrower than an upper side, and a refractive index of the second dielectric body is higher than that of the first dielectric body.

Abstract: Provided is a structure of a silicon photomultiplier including an insulating layer to isolate pixels in the silicon photomultiplier and a quench resistor formed on the insulating layer to maximize the size of a light-receiving area, and a method of manufacturing the silicon photomultiplier.

Abstract: Provided are a biosensor and a biomaterial detection apparatus including the same. The biomaterial detection apparatus comprises a light source to provide quantized photons; a substrate spaced apart from the light source; a single photonic sensor layer disposed on the substrate to sense the photons; and an adsorption layer disposed to cover the single photonic sensor layer, allow the photons to pass therethrough, and adsorb a biomaterial between the light source and the substrate.

Abstract: Provided are a silicon photomultiplier and method for fabricating silicon photomultiplier. The silicon photomultiplier includes a first conductive type semiconductor layer; a first conductive type buried layer disposed in a lower portion of the first conductive type semiconductor layer, and having a higher impurity concentration than the first conductive type semiconductor layer; quench resistors spaced from each other and disposed on the first conductive type semiconductor layer; a transparent insulator formed on the first conductive type semiconductor layer, and exposing the quench resistors; second conductive type doped layers disposed under the quench resistors to contact the first conductive type semiconductor layer; and a transparent electrode commonly connected to the quench resistors electrically.

Abstract: Provided is a method of manufacturing a hollow microneedle structure. The method includes coating a hollow core having a predetermined section and being long in a lengthwise direction with a coating solution, and solidifying the coating solution to form a coating layer, depositing a metal seed layer on the coating layer, plating the seed metal layer with a metal to form a plated layer, cutting the hollow core having the plated layer at an inclination angle with respect to the lengthwise direction for form a surface inclination, and removing the hollow core and the coating layer to form a hollow microneedle structure. Thus, the hollow microneedle structure can be manufactured to have such diameter, length, hardness, and inclination angle as to minimize pain. By use of the hollow core, the microneedle structure can have vertical microneedles with a uniform inner diameter.

Abstract: Provided are a photomultiplier and a manufacturing method thereof. The manufacturing method thereof may include forming a mask layer on an active region of a substrate doped with a first conductive type, ion implanting a second conductive type impurity opposite to the first conductive type into the substrate to form a first doped region in the active region under the mask layer and an non-active region exposed from the mask layer, forming a device isolation layer on the non-active region, removing the mask layer, and ion implanting the second conductive type impurity having a concentration higher than that of the first doped region into an upper portion of the first doped region in the active region to form a second doped region shallower than the first doped region.

Abstract: Disclosed is an optical structure formed in an upper side of a semiconductor photomultiplier having a plurality of microcells. The optical structure includes: a first dielectric body formed in an upper side of a dead area between light receiving areas of the respective microcells and having a cross-sectional structure in which a lower side is wider than an upper side; and a second dielectric body formed in the upper side of the light receiving area of each microcell and having a cross-sectional structure in which a lower side is narrower than an upper side, and a refractive index of the second dielectric body is higher than that of the first dielectric body.

Abstract: Provided are a silicon photomultiplier and method for fabricating silicon photomultiplier. The silicon photomultiplier includes a first conductive type semiconductor layer; a first conductive type buried layer disposed in a lower portion of the first conductive type semiconductor layer, and having a higher impurity concentration than the first conductive type semiconductor layer; quench resistors spaced from each other and disposed on the first conductive type semiconductor layer; a transparent insulator formed on the first conductive type semiconductor layer, and exposing the quench resistors; second conductive type doped layers disposed under the quench resistors to contact the first conductive type semiconductor layer; and a transparent electrode commonly connected to the quench resistors electrically.

Abstract: A complementary metal-oxide semiconductor (CMOS)-based planar type avalanche photo diode (APD) using a silicon epitaxial layer and a method of manufacturing the APD, the photo diode including: a substrate; a well layer of a first conductivity type formed in the substrate; an avalanche embedded junction formed in the well layer of the first conductivity type by low energy ion implantation; the silicon epitaxial layer formed in the avalanche embedded junction; a doping area of a second conductivity type opposite to the first conductive type, formed from a portion of a surface of the well layer of the first conductivity type in the avalanche embedded junction and forming a p-n junction; positive and negative electrodes formed on the doping area of the second conductivity type and the well layer of the first conductivity type separated from the doping area of the second conductivity type, respectively; and an oxide layer formed on an overall surface excluding a window where the positive and negative electrodes ar