Abstract: Proposed is a precursor composition for forming a metal film including a zirconium compound represented by any one of Chemical Formulas 1 to 3 and a hafnium compound represented by any one of Chemical Formulas 4 to 6.

Abstract: A wafer polishing carrier apparatus and a chemical mechanical polishing equipment employing the same includes a drive rotary union rotating on an axis and receiving a flow of fluid through a first conduit in a sealed-up state; driven rotary unions revolving on their own axis at different sides of the drive rotary union, and receiving the flow of fluid from the drive rotary union through a second conduit in a sealed-up state; a carrier attached to an end part of the driven rotary union to adsorb/detach a wafer using a fluid pressure provided through a third conduit connected through the second conduit; and a filter filtering pollution material in the fluid flowing in and out of the third conduit on the periphery of the carrier to prevent the pollution material from escaping external to the carrier, the pollution material generated from rotation of the drive rotary union and driven rotary unions.

Abstract: A wafer polishing carrier apparatus and a chemical mechanical polishing equipment employing the same includes a drive rotary union rotating on an axis and receiving a flow of fluid through a first conduit in a sealed-up state; driven rotary unions revolving on their own axis at different sides of the drive rotary union, and receiving the flow of fluid from the drive rotary union through a second conduit in a sealed-up state; a carrier attached to an end part of the driven rotary union to adsorb/detach a wafer using a fluid pressure provided through a third conduit connected through the second conduit; and a filter filtering pollution material in the fluid flowing in and out of the third conduit on the periphery of the carrier to prevent the pollution material from escaping external to the carrier, the pollution material generated from rotation of the drive rotary union and driven rotary unions.

Abstract: Chemical mechanical polishing (CMP) equipment for use in planarizing a semiconductor wafer prevents slurry from being deposited on the surfaces of respective components of the equipment. The CMP equipment includes a turntable, a polishing pad mounted to the table so as to rotate with the table, a slurry supply unit for dispensing slurry onto the polishing pad, a polishing head unit for pressing a wafer downward atop the polishing pad, a conditioning unit for scoring the pad to maintain the surface of the polishing pad uniform, and a cleaning fluid supply unit. The cleaning solution supply unit has at least one spray nozzle by which cleaning solution is sprayed onto the polishing pad and respective components of the CMP equipment.

Abstract: Chemical mechanical polishing (CMP) equipment for use in planarizing a semiconductor wafer prevents slurry from being deposited on the surfaces of respective components of the equipment. The CMP equipment includes a turntable, a polishing pad mounted to the table so as to rotate with the table, a slurry supply unit for dispensing slurry onto the polishing pad, a polishing head unit for pressing a wafer downward atop the polishing pad, a conditioning unit for scoring the pad to maintain the surface of the polishing pad uniform, and a cleaning fluid supply unit. The cleaning solution supply unit has at least one spray nozzle by which cleaning solution is sprayed onto the polishing pad and respective components of the CMP equipment.

Abstract: A calibration device for a pad conditioner head of a CMP machine includes a lower first horizontal member defining an arcuate reference surface having a shape complementary to that of the outer peripheral edge of the platen of the machine, an upper second horizontal member spaced vertically from the first member and having a reference mark thereon lying in the projected plane of the reference surface, and a connecting member interconnecting the first member and second member. When the reference surface of the first horizontal member of the calibration device is be butted against the outer peripheral edge of the platen adjacent the head of the pad conditioner, the location of the outermost portion of the head of the pad conditioner relative to the reference mark is readily observable. Thus, the extent to which the outermost portion of the head of the pad conditioner is vertically aligned relative to the outer peripheral edge of the platen can be easily and accurately determined.

Abstract: A calibration device for a pad conditioner head of a CMP machine includes a lower first horizontal member defining an arcuate reference surface having a shape complementary to that of the outer peripheral edge of the platen of the machine, an upper second horizontal member spaced vertically from the first member and having a reference mark thereon lying in the projected plane of the reference surface, and a connecting member interconnecting the first member and second member. When the reference surface of the first horizontal member of the calibration device is be butted against the outer peripheral edge of the platen adjacent the head of the pad conditioner, the location of the outermost portion of the head of the pad conditioner relative to the reference mark is readily observable. Thus, the extent to which the outermost portion of the head of the pad conditioner is vertically aligned relative to the outer peripheral edge of the platen can be easily and accurately determined. SEC.