Patents by Inventor Yong-sung Kim

Yong-sung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9362460
    Abstract: The invention is directed to an integrated polarized light emitting diode device that has a light emitting diode, a metal grating, an oxide layer, and a built-in photonic crystal rotator. Additional teachings include a method for making the integrated polarized light emitting diode, a method for improving the polarization selectivity and energy efficiency of a light emitting diode, and a method for rotating polarization of a light emitting diode.
    Type: Grant
    Filed: July 19, 2011
    Date of Patent: June 7, 2016
    Assignee: RENSSELAER POLYTECHNIC INSTITUTE
    Inventors: Shawn-Yu Lin, Yong Sung Kim, Mei-Li Hsieh
  • Publication number: 20160130315
    Abstract: A tumor tissue-penetrating peptide specifically binding to neuropilin, or a fusion protein, a small molecule drug, a nanoparticle, or a liposome having the peptide fused therein is provided, as well as a method for preparing the same and a pharmaceutical composition comprising the same for treating, diagnosing, or preventing cancer or angiogenesis-related diseases. The tumor tissue-penetrating peptide is fused to the C-terminus of an anticancer antibody heavy-chain constant region (Fc) and the fused antibody specifically binds to neuropilin, and specifically accumulates in tumor tissue, widens intercellular gaps between tumor vascular endothelial cells, promotes extravasation, increases infiltration within tumor tissue, and shows a remarkably increased in vivo tumor-suppressing activity.
    Type: Application
    Filed: May 22, 2014
    Publication date: May 12, 2016
    Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Yong Sung KIM, Tae Hwan SHIN, Yae Jin KIM, Eun Sil SUNG
  • Publication number: 20160083455
    Abstract: Disclosed herein is an antiviral agent against animal viruses. The antiviral agent contains a protein or a nucleic acid sequence encoding the protein, as an active ingredient, the protein having binding ability and degrading ability to foreign nucleic acid chains invaded in an animal cell and that has no cytotoxicity to the animal cell itself. Disclosed herein is further an antiviral animal cell containing the protein according to the present invention, or the nucleic acid sequence encoding the protein. The antiviral agent and antiviral animal cell exhibit advantageous effects in that they selectively degrade foreign nucleic acid chains invaded in an animal cell and have no cytotoxicity to the animal cell, thus causing no death of the animal cell.
    Type: Application
    Filed: August 6, 2014
    Publication date: March 24, 2016
    Inventors: Suk-Chan Lee, Yong-Sung Kim, Myung-Hee Kwon, Tai-Hyun Kim, Jeong-Sun Kim, Gun-Sup Lee, Hye-Kyung Shim, Eul-Yong Park, Yu-Chul Jung, Ki-Yoon Kim, Yi-Jung Jung, Woo-Ram Lee, Young-Rim Kim, Jong-Nam Sohn, Seung-Hyun Lee, Jae Young Song, Eun Jin Choi
  • Patent number: 9257508
    Abstract: Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: February 9, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chang-seung Lee, Joo-ho Lee, Yong-sung Kim, Jun-seong Kim, Chang-youl Moon
  • Patent number: 9214559
    Abstract: Graphene transferring members, graphene transferrer, methods of transferring graphene, and methods of fabricating a graphene device, may include a metal thin-film layer pattern and a graphene layer sequentially stacked on an adhesive member. The metal thin-film layer and the graphene layer may have the same shape. After transferring the graphene layer onto a transfer-target substrate during the fabrication of a graphene device, the metal thin-film layer is patterned to form electrodes on respective ends of the graphene layer by removing a portion of the metal thin-film layer.
    Type: Grant
    Filed: October 24, 2012
    Date of Patent: December 15, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Joo-ho Lee, Chang-seung Lee, Yong-sung Kim, Hyun-jae Song
  • Patent number: 9196478
    Abstract: Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate.
    Type: Grant
    Filed: May 2, 2014
    Date of Patent: November 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joo-ho Lee, Yong-sung Kim, Chang-youl Moon, Sung-hee Lee, Chang-seung Lee
  • Publication number: 20150318350
    Abstract: A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.
    Type: Application
    Filed: June 25, 2015
    Publication date: November 5, 2015
    Inventors: Soo-ho Shin, Yong-sung Kim, Tae-young Chung
  • Publication number: 20150307628
    Abstract: Disclosed are a CH3 domain variant pair of an antibody, a method for preparing same, and a use thereof. A mutation is induced in the CH3 domain so as to improve a yield of forming a heterodimer heavy chain constant region of an antibody. The CH3 domain heterodimer forms a heterodimer heavy chain constant region with a high efficiency of 90 to 95% or more and also has outstanding heat stability. A heterodimer heavy chain constant region including the CH3 domain heterodimer can construct a bispecific monoclonal antibody which simultaneously recognizes two kinds of antigens. The CH3 domain heterodimer and the bispecific antibody or fusion protein of an antibody constant region comprising same can be usefully applied to the treatment or prevention of a disease associated with a target antigen or a target protein.
    Type: Application
    Filed: November 27, 2013
    Publication date: October 29, 2015
    Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Yong Sung KIM, Hye Ji CHOI, Eun Sil SUNG
  • Patent number: 9142639
    Abstract: A graphene electronic device includes: a first conductive layer and a semiconductor layer on a first region of an intermediate layer; a second conductive layer on a second region of the intermediate layer; a graphene layer on the intermediate layer, the semiconductor layer, and the second conductive layer; and a first gate structure and a second gate structure on the graphene layer.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: September 22, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-sung Kim, Chang-seung Lee, Joo-ho Lee
  • Patent number: 9099325
    Abstract: A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.
    Type: Grant
    Filed: December 17, 2013
    Date of Patent: August 4, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-Sung Kim, Tae-Young Chung, Soo-Ho Shin
  • Patent number: 9082579
    Abstract: Electromagnetic wave oscillators each having a multi-tunnel and electromagnetic wave generating apparatuses including the electromagnetic wave oscillators are provided. The electromagnetic wave oscillator includes: a first waveguide which has a folded structure such that a path traveled by an electromagnetic wave through the first waveguide crosses an axial direction a plurality of times; an electron beam tunnel through which an electron beam passes, wherein the electron beam tunnel extends along the axial direction and crosses the first waveguide a plurality of times; and at least one auxiliary tunnel which extends parallel to the electron beam tunnel and which crosses the first waveguide a plurality of times.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: July 14, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chan-wook Baik, Ho-young Ahn, Yong-sung Kim
  • Patent number: 9056424
    Abstract: A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.
    Type: Grant
    Filed: June 14, 2013
    Date of Patent: June 16, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Xianyu Wenxu, Jeong-yub Lee, Chang-youl Moon, Yong-young Park, Woo-young Yang, Yong-sung Kim, Joo-ho Lee
  • Patent number: 9040958
    Abstract: Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: May 26, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chang-seung Lee, Yong-sung Kim, Joo-ho Lee, Yong-seok Jung
  • Patent number: 9030187
    Abstract: A nanogap device includes a first insulation layer having a nanopore formed therein, a first nanogap electrode which may be formed on the first insulation layer and may be divided into two parts with a nanogap interposed between the two parts, the nanogap facing the nanopore, a second insulation layer formed on the first nanogap electrode, a first graphene layer formed on the second insulation layer, a first semiconductor layer formed on the first graphene layer, a first drain electrode formed on the first semiconductor layer, and a first source electrode formed on the first graphene layer such as to be apart from the first semiconductor layer.
    Type: Grant
    Filed: April 3, 2013
    Date of Patent: May 12, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-seung Lee, Yong-sung Kim, Jeo-young Shim, Joo-ho Lee
  • Patent number: 9006044
    Abstract: A method of manufacturing a graphene device may include forming a device portion including a graphene layer on the first substrate; attaching a second substrate on the device portion of the first substrate; and removing the first substrate. The removing of the first substrate may include etching a sacrificial layer between the first substrate and the graphene layer. After removing the first substrate, a third substrate may be attached on the device portion. After attaching the third substrate, the second substrate may be removed.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: April 14, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-seung Lee, Joo-ho Lee, Yong-sung Kim, Chang-youl Moon
  • Patent number: 8987016
    Abstract: The invention relates to light-emitting devices, and related components, systems and methods. In one aspect, the present invention is related to light emitting diode (LED) light extraction efficiency. A non-limiting example, the application teaches a method for improving light emitting diode (LED) extraction efficiency, by providing a nano-rod light emitting diode; providing quantum wells; and reducing the size of said nano-rod LED laterally in the quantum-well plane (x and y), thereby improving LED extraction efficiency.
    Type: Grant
    Filed: August 16, 2011
    Date of Patent: March 24, 2015
    Assignee: Rensselaer Polytechnic Institute
    Inventors: Mei-Ling Kuo, Shawn-Yu Lin, Yong Sung Kim, Mei-Li Hsieh
  • Patent number: 8955014
    Abstract: A method and apparatus for browsing a plurality of broadcast programs are provided. The method includes classifying a plurality of broadcast programs into one or more broadcast program groups with reference to electronic program guide (EPG) information or viewing records of a user regarding the broadcast programs, one-dimensionally arranging the broadcast programs so that the broadcast program groups are one-dimensionally arranged, displaying the broadcast programs and the broadcast program groups on a screen as a graphic image, and allowing the user to change a rule used for forming the broadcast program groups. Accordingly, it is possible to enable a user to effectively browse broadcast programs and to provide the user with a user interface customized for the user by using a simple one-dimensional input method and intuitively utilizing EPG information.
    Type: Grant
    Filed: March 14, 2007
    Date of Patent: February 10, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-ho Ryu, Yong-sung Kim, Tae-ung Jung, Dong-hyun Roh, Hee-seon Park, Hye-Soo Lee, So-hee Jang, Chang-hwan Choi
  • Patent number: 8932941
    Abstract: The method of manufacturing a graphene device includes forming an insulating material layer on a substrate, forming first and second metal pads on the insulating material layer spaced apart from each other, forming a graphene layer having a portion defined as an active area between the first and second metal pads on the insulating material layer, forming third and fourth metal pads on the graphene layer spaced apart from each other with the active area therebetween, the third and fourth metal pads extending above the first metal pad and the second metal pad, respectively, forming a first protection layer to cover all the first and second metal pads, the graphene layer, and the third and fourth metal pads, and etching an entire surface of the first protection layer until only a residual layer made of a material for forming the first protection layer remains on the active area.
    Type: Grant
    Filed: April 3, 2013
    Date of Patent: January 13, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joo-ho Lee, Tae-han Jeon, Yong-sung Kim, Chang-seung Lee, Yong-seok Jung
  • Patent number: 8914346
    Abstract: Systems, methods and devices described herein enable producing and utilizing a clustered search index as a way of searching correlated data groups, such as channel lineups. In particular, in some implementations systems, methods and devices are operable to create a clustered search index that includes clusters of TV channels frequently provided together in various channel lineups in order to improve searching efficiency. That is, the resultant search index is based on sub-lineups of channels that are shared by multiple channel lineups (i.e. sub-lineup indexing). Each sub-lineup includes channels that are frequently provided together, as determined by analysis of the channel lineups offered by the various providers. Additionally and/or alternatively, in some implementations systems, methods and devices are operable to process a search query by selecting a number of pertinent channel clusters from a clustered search index associated with one or more characteristics associated with the query.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: December 16, 2014
    Assignee: Google Inc.
    Inventor: Yong Sung Kim
  • Patent number: 8909658
    Abstract: A method and apparatus are provided for automatically selecting and deleting unimportant content in order to secure a storage space in a digital multimedia device. The multimedia content is classified into content in which a storage period is set and content in which a storage period is not set and then the content is stored. The size of the content occupying a storage space in each storage type is automatically calculated to analyze a user's pattern of using the storage space when the storage space is insufficient, and content to be deleted is selected according to the analyzed pattern. Thus, it is possible to prevent the content which the user does not want to delete from being deleted and to eliminate the need for the user to individually manage the content.
    Type: Grant
    Filed: September 7, 2006
    Date of Patent: December 9, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hye-Soo Lee, Yong-sung Kim