Abstract: A method for fabricating a light emitting diode (LED) is provided. First, a first type doped semiconductor layer, an emitting layer and a second type doped semiconductor layer are sequentially formed on an epitaxy substrate. Then, a first transparent conductive layer is formed on the second type doped semiconductor layer. Next, a substitution substrate having a second transparent conductive layer formed thereon is provided. Then, a wafer bonding process is performed on the epitaxy substrate and the substitution substrate, so as to bond the first transparent conductive layer and the second transparent conductive layer. Finally, the epitaxy substrate is removed. As mentioned above, an LED with better reliability is fabricated according to the method provided by the present invention. Moreover, the present invention further provides an LED.