Abstract: A method for operating a data storage device which includes a nonvolatile memory device including a plurality of memory blocks, includes generating a valid page count table including the number of valid pages of each of closed blocks among the plurality of memory blocks in which data are written in all pages thereof and the number of valid pages of at least one open block among the plurality of memory blocks in which data is written in a part of pages thereof; generating a valid page scan table including a scan pointer for scanning the number of valid pages of the open block; and backing up the valid page count table and the valid page scan table in a meta block among the plurality of memory blocks.

Abstract: Provided are a method of fabricating a 3-dimensional transistor sensor and the sensor and a sensor array thereof. The method of fabricating the 3-dimensional transistor sensor includes forming an insulating layer on a silicon substrate, forming a silicon layer on the insulating layer and forming a 3-dimensional silicon fin by etching the silicon layer, forming a source area and a source electrode at one end of the silicon fin, forming a drain area and a drain electrode at the other end the silicon fin, and forming a gate area at a center of the silicon fin, surrounding three surfaces of a gate with a gate insulating layer, forming a sensing gate layer configured to surround a portion of the gate insulating layer, and sealing an upper portion of the gate insulating layer excluding the sensing gate layer.

Abstract: A data communication method using forward error correction (FEC) includes: receiving at least one of symbols that constitute one encoding block unit; extracting information related to parameters that adjust an FEC encoding rate from the at least one symbol; determining whether an error may be corrected based on the extracted information related to the parameters and a number of symbols with errors from among the symbols that constitute the encoding block unit; and transmitting feedback information related to the symbols prior to the symbols that constitute the encoding block unit being completely received based on the determination of whether an error may be corrected.

Abstract: The present disclosure relates to a sensor network, Machine Type Communication (MTC), Machine-to-Machine (M2M) communication, and technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. The present disclosure relates to control a client device using a server device based on context data indicating a circumstance of a user.

Abstract: A memory system may include: a memory device including a plurality of storage regions; and a controller. The controller may be coupled between a host and the memory device, and perform a read retry operation when a read error occurs in any one of the storage regions based on occurrence possibilities for a plurality of different type of defects in any one storage region where a read error occurred.

Abstract: The present disclosure relates to a sensor network, Machine Type Communication (MTC), Machine-to-Machine (M2M) communication, and technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. The present disclosure relates to control a client device using a server device based on context data indicating a circumstance of a user.

Abstract: A data storage device includes a nonvolatile memory device including memory block groups and map data blocks, each memory block group including a first page group storing data transmitted from a host device and a second page group storing address mapping information corresponding to the data; and a controller configured to determine whether the number of valid data stored in a first memory block group in which the second page group is damaged is equal to or smaller than a size of an available capacity of an open map data block which is being used, and control, when the number of the valid data is equal to or smaller than the available capacity, the nonvolatile memory device to store address mapping information corresponding to the valid data of the first memory block group, in the open map data block.

Abstract: A controller may include a memory suitable for caching write data and map data corresponding to the write data; and a processor suitable for flushing the cached map data in a memory device, and then storing the write data in the memory device, wherein the map data includes location information of the write data.

Abstract: A horizontal linear vibration motor for securing the straightness of a coil spring and preventing a driving unit, such as a mass body, from axially rotating around the axis of a shaft within a housing due to the rotational property of the coil spring by providing a coil and a magnet for generating a force that enables the reciprocating motion of the driving unit including the mass body and an anti-rotation member provided in the driving unit to slide and come into contact with the housing.

Abstract: An adhesive film, an optical member including the same, and an optical display including the same are disclosed. The adhesive film has a folding evaluation parameter 1 of about 900% to about 1,300% at 25° C., as calculated by Equation 1 and a folding evaluation parameter 2 of about 40% to about 95% at 60° C., as calculated by Equation 2, and includes a hydroxyl group-containing (meth)acrylic copolymer.

Abstract: Provided are a method of fabricating a 3-dimensional transistor sensor and the sensor and a sensor array thereof. The method of fabricating the 3-dimensional transistor sensor includes forming an insulating layer on a silicon substrate, forming a silicon layer on the insulating layer and forming a 3-dimensional silicon fin by etching the silicon layer, forming a source area and a source electrode at one end of the silicon fin, forming a drain area and a drain electrode at the other end the silicon fin, and forming a gate area at a center of the silicon fin, surrounding three surfaces of a gate with a gate insulating layer, forming a sensing gate layer configured to surround a portion of the gate insulating layer, and sealing an upper portion of the gate insulating layer excluding the sensing gate layer.

Abstract: A data storage device includes a nonvolatile memory device and a controller configured to control an operation of the nonvolatile memory device. The controller includes a volatile memory including a first index storage unit in which first index information for first data buffers are stored and a second index storage unit in which second index information for second data buffers are stored, a first central processing unit (CPU) configured to perform allocation and release of allocation of the first data buffers by accessing the first index storage unit of the volatile memory, and a second CPU configured to perform allocation and release of allocation of the second data buffers by accessing the second index storage unit of the volatile memory.

Abstract: A memory system includes a nonvolatile memory device including a plurality of planes; and a controller suitable for determining whether a first read operation for the nonvolatile memory device is a random read operation, and accessing at least one first target plane of the first read operation, according to an access merge process, depending on a determination result, wherein the controller simultaneously accesses the first target plane and at least one second target plane included in the nonvolatile memory device, according to the access merge process.

Abstract: Disclosed is a method for directly synthesizing monocyclic aromatic compounds and long-chain olefin compounds from a carbon dioxide-rich synthetic gas and, specifically, a method for directly synthesizing monocyclic aromatic compounds and long-chain olefin compounds from a carbon dioxide-rich synthetic gas, the method comprising a step of preparing a C1-C15 short-chain hydrocarbon by Fischer-Tropsch (FT) synthesis and a step of preparing monocyclic aromatic compounds and long-chain olefin compounds by dehydrogenating the short-chain hydrocarbon products, and maximizing the yield of the short-chain hydrocarbon by using, as a synthetic gas to be used in FT synthesis, a carbon dioxide-rich synthetic gas in which the molar ratio of hydrogen, carbon monoxide and carbon dioxide is delimited to a specific range, and maximizing the yield of the monocyclic aromatic compounds or the long-chain olefin compounds by specifying the composition of a catalyst to be used in the dehydrogenation and the temperature and pressure

Abstract: A controller includes: a victim list update unit suitable for storing information on an error block in a victim list when the error block is detected; a control unit suitable for deciding whether or not to perform a copy operation based on whether or not a predetermined condition is satisfied; a copy unit suitable for copying the error block into a destination super block while maintaining a location of a die when the control unit performs the copy operation; and a victim list delete unit suitable for deleting the victim list including the error block when the copy operation ends.

Abstract: In a method of operating a data storage device including a non-volatile memory device, which includes a closed memory block and an open memory block, a scan pointer and a map scan information of the open memory block is generated. The scan pointer indicates a page next to a page to which a writing operation is completed. The map scan information includes a logical address information mapped in a page of the open memory block. When the data storage device is recovered from a power loss, the logical address information is read based on the map scan information. An address map is rebuilt based on the read logic address information.

Abstract: A method for operating a data storage device including a non-volatile memory device including a first region and a second region includes: storing data from a data cache memory in memory blocks in the first region; determining a first garbage collection cost with respect to a first target memory block having the least valid page among the memory blocks in the first region in which the data are kept; determining a second garbage collection cost with respect to a second target memory block having the least valid page among the memory blocks in the first region from which the data are cleared; and performing a garbage collection operation to copy valid data of a garbage collection target memory block into memory blocks in the second region based on a comparison result of the first garbage collection cost and the second garbage collection cost.

Abstract: The present disclosure relates to a method and an apparatus for transmitting and receiving data in accordance with a transmission mode in a communication system. A method for transmitting data by a transmitter in a communication system, according to the present disclosure, comprises the steps of: transmitting a probe message to a receiver on the basis of at least one transmission mode of a multicast transmission mode and a unicast transmission mode; receiving a reception report message including status information of a network from the receiver; determining a transmission mode of one of the multicast transmission mode and the unicast transmission mode on the basis of the reception report message; and transmitting the data to the receiver on the basis of the determined transmission mode.

Abstract: A operating method of memory system including a controller and a memory device may efficiently flush map data for the Sudden Power Off Recovery SPOR.

Abstract: A data processing system includes a host suitable for providing an access request; and a plurality of memory systems suitable for storing or reading data thereto or therefrom in response to the access request, wherein the host includes a host memory buffer suitable for storing a plurality of meta-data respectively corresponding to the plurality of memory systems, wherein each of the plurality of meta-data includes a first threshold value representing storage capacity for user data in a corresponding memory system among the plurality of memory systems, a second threshold value representing a number of read operations for logical block addresses (LBAs) of the corresponding memory system, a third threshold value representing a temperature of the corresponding memory system and respective LBAs of the plurality of memory systems.