Abstract: An image sensor includes a semiconductor substrate including a plurality of photo-sensing devices, a photoelectric conversion device disposed on the semiconductor substrate and absorbing the mixed light of a first color and a second color, and a color filter disposed on one side of the photoelectric conversion device and configured to selectively transmit a mixed light including a third color, and an electronic device including the image sensor is provided.

Abstract: A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.

Abstract: A compound for an infrared light sensing device may be represented by a particular chemical formula and may be included in an infrared light sensing device. An image sensor may include the infrared light sensing device, and an electronic device may include the image sensor.

Abstract: An optoelectronic diode may include a first electrode, a second electrode, a third electrode, a first active layer between the first and second electrodes, and a second active layer between the second and third electrodes. Two of the electrodes may be electrically connected to each other and may have different resistances. The first and second active layers may be isolated from each other. The first active layer, the first electrode, and the second electrode may form a diode, and the second active layer, the second electrode, and the third electrode may form a diode. The second electrode may have a refractive index different from a refractive index of the second active layer.

Abstract: A compound is selected from the compound represented by Chemical Formula 1A, the compound represented by Chemical Formula 1B, and a mixture thereof.

Abstract: A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.

Abstract: An image sensor including a semiconductor substrate integrated with a plurality of photo-sensing devices and a nanopattern layer on the semiconductor substrate, the nanopattern layer having a plurality of nanopatterns, wherein each nanopattern of the plurality of nanopatterns correspond one to one with a single photo-sensing device of the plurality of photo-sensing devices, respectively.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

Abstract: A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.

Abstract: An image sensor includes a semiconductor substrate including a plurality of photo-sensing devices, a photoelectric conversion device disposed on the semiconductor substrate and absorbing the mixed light of a first color and a second color, and a color filter disposed on one side of the photoelectric conversion device and configured to selectively transmit a mixed light including a third color, and an electronic device including the image sensor is provided.

Abstract: Embodiments of a multifunctional head massager are disclosed. The multifunctional head massages includes a helmet including a front shell and a rear shell, and a controller connected to the helmet. A blinder for massaging eyes is detachably connected to the front shell. In the present invention, the blinder is detachably connected to the front shell, so that the head massager has the eye massage function at the same time. When users do not want to massage their eyes, the blinder can be removed, and the head massage function is not affected.

Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.

Abstract: A printed circuit board and a method of manufacturing the same are provided. The printed circuit board includes a first circuit layer disposed on an upper surface of a substrate, an insulating layer disposed on the substrate and the first circuit layer, a second circuit layer disposed on an upper surface of the insulating layer, and a via configured to connect between the first circuit layer and the second circuit layer, and a lower part of the via is in contact with the upper surface of the substrate.

Abstract: An image sensor includes at least one first pixel configured to sense light in a visible light wavelength spectrum and a second pixel configured to sense light in an infrared light wavelength spectrum. The second pixel includes a first photoelectric device defined in the second pixel. The first photoelectric device includes an infrared light absorption layer between a first electrode and a second electrode and configured to selectively absorb light in an infrared spectrum. The second pixel may be configured to compensate the luminance sensitivity of the image sensor. The first and second pixels may be included in a unit pixel group. The image sensor may include an array of multiple unit pixel groups arranged in one or more rows and one or more columns.

Abstract: An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

Abstract: An image sensor may include an organic photo-sensing device configured to selectively sense first visible light and a photo-sensing device array including a first photo-sensing device configured to selectively sense second visible light, a second photo-sensing device configured to selectively sense third visible light, and a third photo-sensing device configured to selectively sense mixed light of the second visible light and the third visible light. The image sensor may include a color filter array including a first color filter configured to selectively transmit the second visible light, a second color filter configured to selectively transmit the third visible light, and a third color filter configured to transmit mixed light of the second visible light and the third visible light. At least the first photo-sensing device and the second photo-sensing device may be at different depths in a substrate and may be laterally offset from each other.

Abstract: An image sensor includes a first light detecting device configured to selectively sense or absorb first visible light, a second light detecting device configured to selectively sense or absorb second visible light having a longer wavelength region than the first visible light, and a third light detecting device on the first light detecting device and the second light detecting device. The first light detecting device has one of a maximum transmission wavelength and a maximum absorption wavelength less than about 440 nm, the second light detecting device has one of a maximum transmission wavelength and a maximum absorption wavelength greater than about 630 nm, and the third light detecting device is configured to selectively sense or absorb third visible light having a wavelength region between the first visible light and the second visible light.

Abstract: A camera module includes a coil member, a magnet member, and a sensor member. The coil member is positioned on a first surface of a fixed unit. The magnet member is positioned on a movable unit and facing the coil member. The sensor member is positioned on a second surface of the fixed unit and configured to sense a position of the movable unit.

Abstract: An organic photoelectric device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including an n-type semiconductor compound represented by Chemical Formula 1 and a p-type semiconductor compound having selective light absorption in a green wavelength region of about 500 nm to about 600 nm.