Abstract: A grounding resistance and ground rod corrosion reducer that is capable of making use of montmorillonite, smectite, and vermiculite to apply antacid effect to acidified grounding environments, thereby decreasing a corrosion rate of a ground rod and providing an excellent grounding resistance reduction rate. The grounding resistance and ground rod corrosion reducer contains 50 to 75% by weight of a grounding resistance soil mixture made up of the montmorillonite, the smectite, and the vermiculite, 20 to 40% by weight of magnesium hydroxide, and 5 to 15% by weight of graphite, based on the total weight thereof.

Abstract: The present invention relates to an antenna apparatus.

Abstract: The present invention relates to an antenna apparatus. In particular, the antenna apparatus comprises: a radiating element module including a plurality of antenna sub-arrays electrically connected to the front of an RF filter and arranged to implement antenna beamforming by building a predetermined number of RF chains; and a phase shifter which shifts a phase value by changing the length ratio of a physical transmission line to the plurality of antenna sub-arrays to a predetermined ratio, wherein each RF chain of the radiating element module is implemented such that the antenna sub-array is connected to one output terminal of two output terminals branching off from an input terminal of each RF chain and an additional antenna sub-array corresponding to the antenna sub-array is further arranged to be connected to the other output terminal. Accordingly, a beam with a narrow beam width and a high antenna gain may be radiated, thus providing advantages in production cost and process.

Abstract: An anode active material composition for a lithium secondary battery includes a carbon-based anode active material and a silicon-based anode active material, wherein the carbon-based anode active material has an orientation (I004/I110, here, I004 is a peak intensity of the (004) plane when measuring X-ray diffraction (XRD) of the carbon-based anode active material, and I110 is a peak intensity of the (110) plane when measuring XRD of the carbon-based anode active material) of 2.85 or less measured by XRD.

Abstract: The present invention relates to an antenna board assembly and an antenna apparatus including same. In particular, the antenna apparatus comprises an antenna board assembly including: a reflecting panel which is provided to reflect forward antenna beams radiated from a plurality of array antenna elements provided in front; a rear panel which is stacked and coupled to the rear surface of the reflecting panel and composed of a non-conductive material; and a front panel which is stacked and coupled to the front surface of the reflecting panel and composed of a non-conductive material, wherein the rear panel and the front panel are formed as a single body through dual injection molding so as to be stacked and coupled with respect to the reflecting panel. Therefore, the present invention provides the advantage of making it possible to improve system performance through the reduction of insertion loss.

Abstract: According to one embodiment of the present disclosure, an antenna device comprising: a plate; a first dielectric plate coupled to one surface of the plate; a plurality of radiation elements arranged along a first direction on the first dielectric plate; and a plurality of first feed lines configured to supply power to the plurality of radiation elements and having an air-strip line structure, wherein the first dielectric plate includes a first groove penetrating upper and lower surfaces of the first dielectric plate and configured to allow the first feed line to float therein, and the first feed line is configured to float in the first groove.

Abstract: A semiconductor memory device having improved electrical characteristics is provided. The semiconductor memory device comprises a first semiconductor pattern separated from a substrate in a first direction, a first gate structure extending in the first direction and penetrating the first semiconductor pattern, a first conductive connecting line connected to the first semiconductor pattern and extending in a second direction different from the first direction, and a second conductive connecting line connected to the first semiconductor pattern. The first gate structure is between the first conductive connecting line and the second conductive connecting line, the first gate structure includes a first gate electrode and a first gate insulating film, and the first gate insulating film includes a first charge holding film contacting with the first semiconductor pattern.

Abstract: A multilayer ceramic capacitor may include: a ceramic body that includes dielectric layers and internal electrodes; an external electrode including a connection portion that covers an end surface of the ceramic body and a band portion that extends from the connection portion to cover a side surface of the ceramic body; a first cover layer disposed between the internal electrode closest to the side surface and the side surface; a second cover layer opposing the first cover layer; an active region in which the internal electrodes overlap and spaced apart from the end surface by a first distance, a first dummy electrode disposed in the first cover layer, and a seed electrode layer disposed between the band portion and the first cover layer, wherein a length of the seed electrode layer is greater than the first distance and greater than a length of the first dummy electrode.

Abstract: A multilayer ceramic capacitor includes a ceramic body, a plurality of first and second internal electrodes having a dielectric layer therebetween in the ceramic body, first and second external electrodes including a body portion covering both end surfaces spaced apart from each other along a length direction of the ceramic body, respectively, a first band portion extending from the body portion and covering a part of a first surface of the ceramic body in a thickness direction, and a second band portion covering a part of a second surface facing the first surface and being longer than the first band portion, first and second cover layers that are disposed in the ceramic body along the thickness direction of the ceramic body, and a first cladding layer between the second cover layer, the second band portion of the first external electrode, and the second band portion of the second external electrode.

Abstract: A multilayer ceramic capacitor includes: a ceramic body; external electrodes each including a connection portion covering a part of an end surface of the ceramic body in a length direction, and a band portion extending from the connection portion and covering a part of both side surfaces of the ceramic body in a width direction and a part of one surface in a thickness direction; a plurality of internal electrodes stacked within the ceramic body with a dielectric layer interposed therebetween and alternately connected to the external electrodes, respectively; cover layers respectively disposed outside the plurality of internal electrodes along the thickness direction within the ceramic body; and a dummy electrode disposed within the first cover layer, wherein the first cover layer includes an exposed surface, which is a portion of the end surface exposed by the connection portion.

Abstract: A multilayer ceramic capacitor having a thickness smaller than a width thereof includes: a ceramic main body including first and second surfaces opposite to each other in a first direction, third and fourth surfaces opposite to each other in a second direction, fifth and sixth surfaces opposite to each other in a third direction: a first cover layer including a first dummy electrode pattern adjoining to an internal electrode closest to the fifth surface among the plurality of first and second internal electrodes; and a second cover layer including a second dummy electrode pattern adjoining to an internal electrode closest to the sixth surface among the plurality of first and second internal electrodes.

Abstract: Provided is a multilayer electronic component according to an example embodiment of the present disclosure including: a body including a dielectric layer and an internal electrode alternately disposed with the dielectric layer in a first direction, and including Ni; and an external electrode disposed on the body and connected to the internal electrode, wherein the external electrode includes a base electrode layer including Ni and Pd, and the internal electrode includes a first region, and a content of Pd included in the first region is greater than a content of Pd included in a remaining region, excluding the first region in the internal electrode.

Abstract: As an embodiment of the present disclosure, there is disclosed an aerosol generating device including: a heater configured to generate an aerosol by heating an aerosol generating substrate; a storage unit configured to store information regarding a first time period and a second time period for controlling a temperature of the heater; and a controller configured to control power supplied to the heater, wherein the controller, when the first time period time elapses after the temperature of the heater reaches the first target temperature, changes the temperature of the heater to a second target temperature for the second time period, and the sum of the first time period and the second time period is a time period in a preset change.

Abstract: A substrate processing apparatus includes a photoresist coater applying a photoresist film on a substrate, a humidifier increasing an amount of moisture in an ambient to which the photoresist film on the substrate is exposed, and an exposer irradiating the photoresist film exposed to the ambient having the increased amount of moisture with light. The humidifier is disposed between the photoresist coater and the exposer.

Abstract: A semiconductor memory device having improved electrical characteristics is provided. The semiconductor memory device comprises a first semiconductor pattern separated from a substrate in a first direction, a first gate structure extending in the first direction and penetrating the first semiconductor pattern, a first conductive connecting line connected to the first semiconductor pattern and extending in a second direction different from the first direction, and a second conductive connecting line connected to the first semiconductor pattern. The first gate structure is between the first conductive connecting line and the second conductive connecting line, the first gate structure includes a first gate electrode and a first gate insulating film, and the first gate insulating film includes a first charge holding film contacting with the first semiconductor pattern.

Abstract: A quadri-polarization diversity antenna system is disclosed. According to embodiments of the present disclosure, an antenna system includes an antenna array including a first column of dual-polarized antenna units and a second column of dual-polarized antenna units. Each of the dual-polarized antenna units includes a first antenna element and a second antenna element perpendicularly crossing each other. In each column, the first antenna elements are conductively connected to form a first subarray and the second antenna elements are conductively connected to form a second subarray. The antenna system further includes an RF matrix that selectively adjusts phases of RF input signals to generate RF output signals provided to the subarrays. When the RF output signals are radiated by the dual-polarized antenna units, a first beam with +/?45° polarizations and a second beam with 0°/90° polarizations are formed, and the first beam and the second beam are formed toward spatially different directions from each other.

Abstract: A quadri-polarization diversity antenna system is disclosed. According to embodiments of the present disclosure, an antenna system includes an antenna array including columns of first dual-polarized antenna units arranged on a first plane of an antenna panel and columns of second dual-polarized antenna units arranged on a second plane of the antenna panel. The first plane and the second plane form an obtuse angle with each other. The columns of the first dual-polarized antenna units are used to form a first beam with +/?45 ° polarizations, and the columns of the second dual-polarized antenna units are used to form a second beam with 0°/90° polarizations.

Abstract: A multilayer electronic component includes a body including a first external electrode including a first base plating layer disposed on a third surface of the body and connected to the first internal electrode and a first electrode layer disposed on the first base plating layer, and a second external electrode including a second base plating layer disposed on a fourth surface of the body and connected to the second internal electrode and a second electrode layer disposed on the second base plating layer, wherein the first and second electrode layers include conductive metal and glass, and a 30 ?m×5 ?m region selected from a cross-section of the first base plating layer in the first and second directions includes three or more Ni grains having a grain size of 4 ?m or greater.

Abstract: The present disclosure relates to a phase shifter and a communication device including the same, and particularly, to a phase shifter including a base panel; a fixed substrate which is laminated and fixed on one side or another side on the base panel and has a plurality of circuit patterns printed on the top surface thereof; and a phase shift switching part provided with a plurality of movable substrates including movable strip terminal which are in contact with the plurality of circuit patterns of the fixed substrate, wherein the phase shift switching part is configured to reciprocate the plurality of movable substrates within a predetermined distance in a horizontal direction on the base panel to change the positions of contact points of the movable substrates with respect to the circuit patterns, wherein the phase shift switching part moves the plurality of movable substrates while elastically supporting the plurality of movable substrates toward the circuit patterns, thereby providing an advantage of maxi