Abstract: A wafer transfer apparatus capable of improving working efficiency by simultaneously and selectively transferring a desired amount of wafers to shorten a wafer transfer time. The wafer transfer apparatus includes a plurality of wafer support members capable of supporting and transferring at least one wafer. The wafer transfer apparatus also includes a moving device connected to the wafer support members so as to move the wafer support members corresponding to a number of wafers to be transferred in such a manner that the wafer support members simultaneously transfer at least one wafer.

Abstract: A thermal inkjet printhead includes a plurality of bonding pads to which an external voltage is applied, a plurality of common wires connected to the each of the bonding pads, respectively, a plurality of individual wires connected to each of the common wires, respectively, and heaters connected to each of the individual wires, respectively, to generate ink bubbles by heating ink, wherein each of the common wires includes a first metal layer and a first metal bump which are formed on the first metal layer.

Abstract: Disclosed herein is an upright vacuum cleaner having a movement control grip that is capable of performing switch between automatic operation mode and manual operation mode on the movement control grip. The grip comprises a grip body, having a square section, connected to the upper end of a cleaner body while being bent to the cleaner body, upper and lower guide members vertically connected to each other while surrounding the grip body such that the upper and lower guide members can be slid along the outer surface of the grip body, a grip returning unit disposed at the grip body for resiliently returning the upper and lower guide members to their original positions, and a grip sensor unit mounted at the grip body for sensing the forward or rearward movement direction of upper and lower guide members relative to the grip body.

Abstract: The present invention discloses a suction head for a vacuum cleaner, including a casing having a suction port for sucking alien substances from the floor, an agitator rotatably installed inside the suction port, a plurality of brushes being arranged on the agitator in the length direction, an agitator driving unit for driving the agitator to perform reciprocating rotation in a predetermined angle range, and a resonance unit for resonating the reciprocating rotation of the agitator driving unit. The suction head for the vacuum cleaner improves cleaning performance of the vacuum cleaner.

Abstract: Disclosed is a motor drive control device which uses mechanical switches configured in an H-bridge shape and can protect the mechanical switches from being damaged and minimize a voltage chattering problem occurring upon switching on and off The motor drive control device includes: two relay switching units which are coupled to both sides of a motor and each of which is formed in an H-bridge shape and is connected to an output terminal of a bridge circuit; a switching unit which controls a voltage source applied to the relay switching units; and an inverter controller which first controls any one of the relay switching units and then controls the switching unit so that the motor starts to operate, and first controls the switching unit and then controls the one of the relay switching units so that the motor comes to a halt.

Abstract: An apparatus for removing a DC offset during frequency direct conversion in a reception device of a wireless communication system. In the apparatus, an adder receives a digital baseband signal comprising a DC component, receives an estimated DC offset value, and calculates a difference between the digital baseband signal with the DC component and the estimated DC offset value. A DC offset calculator receives gain mode information of an analog element of the reception device, and calculates the estimated DC offset value according to the gain mode.

Abstract: An inkjet printhead and a method of manufacturing the same. The inkjet printhead may include a substrate through which an ink feed hole to supply ink is formed, a chamber layer stacked above the substrate and including a plurality of ink chambers filled with ink supplied from the ink feed hole, and a nozzle layer stacked on the chamber layer, wherein a plurality of nozzles through which ink is ejected and a plurality of via holes are formed in the nozzle layer.

Abstract: A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.

Abstract: Methods of fabricating a semiconductor device are provided. A semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A thin layer is formed on the semiconductor substrate. The thin layer is patterned to form a plurality of spaced apart field structures and to expose therebetween portions of the semiconductor substrate having the single crystalline structure. A non-crystalline layer is formed on the exposed portions of the semiconductor substrate having the single crystalline structure. The non-crystalline layer is planarized to expose upper surfaces of the field structures and define non-crystalline active structures from the non-crystalline layer between the field structures. A laser beam is generated that heats the non-crystalline active structures to change them into single crystalline active structures having substantially the same single crystalline structure as the defined region of the semiconductor substrate.

Abstract: A method of associating a mobile station to a base station in a wireless communication system comprises transmitting to a serving base station a scanning request message comprising an association indicator. The method also comprises receiving from the serving base station a scanning response message comprising a rendezvous time associated with a neighboring base station for initiating ranging with the neighboring base station, wherein the serving base station communicates an association notification to the neighboring base station, the association notification comprising the rendezvous time. The method also comprises associating with the neighboring base station by transmitting a ranging request after passing of the rendezvous time determined from a transmission time of the scanning response message from the neighboring base station, wherein the rendezvous time is associated with a time the neighboring base station is expected to provide a non-contention based ranging opportunity for the mobile station.

Abstract: Methods of fabricating a semiconductor device include forming a mask pattern on a semiconductor substrate and which exposes defined regions of the semiconductor substrate. Oxygen ions are implanted into the defined regions of the semiconductor substrate using the mask pattern as an ion implantation mask. The oxygen ion implanted regions of the semiconductor substrate are annealed at one or more temperatures in a range that is sufficiently high to form silicon oxide substantially throughout the oxygen ion implanted regions by reacting the implanted oxygen ions with silicon in the oxygen ion implanted regions, and that is sufficiently low to substantially prevent oxidation of the semiconductor substrate adjacent to the oxygen ion implanted regions.

Abstract: Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.

Abstract: A heat-shrinkable polyester film comprising styrene acrylic polymer in an amount ranging from 0.05 to 5% by weight based on the total weight of the film together with 2,2-dimethyl(?1,3-propane)diol-copolymerized polyester and polytrimethylene terephthalate exhibits superior properties suitable for labeling or shrink-wrapping containers.

Abstract: A swing motor having an opening formed asymmetrically inside a stator. The swing motor is formed with an asymmetrical opening, in particular in a semicircular shape inside the stator. The opening is provided with a plurality of salient poles wound with coils. Electric current alternately flows through the coils so that a rotor, installed in the stator in a state of being spaced apart from the stator, can reciprocally move. Since the height of the stator is reduced by forming the opening asymmetrically in comparison with the case of forming the opening symmetrically, it is advantageous for minimizing the size of the product in which the swing motor is installed.

Abstract: Any one of a Ti-containing water-soluble salt, metatitanic acid (TiO(OH)2) slurry and ultra fine titanium oxide powder, and a transition metal containing metal salt are dissolved in water to prepare a raw material mixture. The raw material is spray-dried to obtain precursor powder, which is calcined to form ultra fine Ti/transition metal complex oxide and is then mixed with nano-sized carbon particles and subjected to reduction and carburization in a non-oxidizing atmosphere.

Abstract: A method of fabricating a three-dimensional semiconductor device is provided along with a three-dimensional semiconductor device fabricated thereby. The method includes forming a heat conductive plug to channel heat away from devices on a substrate, while high temperature processes are performed on a stacked semiconductor layer. The ability to use high temperature processes on the stacked semiconductor layer without adversely effecting devices on the substrate allows the formation of a high quality single-crystalline stacked semiconductor layer. The high quality single-crystalline semiconductor layer can then be used to fabricate improved thin film transistors.

Abstract: Provided are a semiconductor device including a fuse focus detector, a fabrication method thereof and a laser repair method. In a chip region, fuses may be formed at a first level. A fuse focus detector including first and second conductive layers may be formed in a scribe line region. The first conductive layer may be formed at the first level, while the second conductive layer may be formed at a different level. For a laser repair method, a target region may be divided into sub-regions. In one selected sub-region, the fuse focus detector may be laser scanned in a direction for a reflection light measurement providing information on a thickness of the fuse focus detector. Using the thickness information, a focus offset value of a fuse in the selected sub-region may be calculated. When the focus offset value is within an allowable range, fuse cutting may be performed.

Abstract: a method of communicating information in a wireless mobile communication system is disclosed. More specifically, the method includes a network for establishing handover management modules in a source network and a target network and transmitting a handover request message from the handover management module of the source network to the handover management module of the target network. Furthermore, the network is used for receiving a handover response message from the handover management module of the target network to the handover management module of the source network, wherein the handover response message includes an internet protocol address information and transmitting a handover confirmation message from the handover management module of the source network to a mobile terminal, wherein the handover confirmation message includes the internet protocol address information.

Abstract: The present disclosure relates to a liquid crystal display (LCD). There is provided an LCD comprising at least one lamp, a light guide plate for converting light incident from the lamp into a surface light source, an LCD panel disposed above the light guide plate for displaying an image thereon, a first reflection plate disposed below the light guide plate and including an end bent to extend parallel to a surface of the light guide plate such that the reflection plate can surround the lamp installed on the surface of the light guide plate, a mold frame including a space for accommodating the lamp, the light guide plate, the LCD panel and the reflection palate therein and including a portion of a sidewall protruding into the LCD to surround the top of the lamp, and a second reflection plate disposed on a rear surface of a portion of the mold frame arranged above the lamp. Therefore, a thin and lightweight LCD can be obtained and lamp efficiency can also be improved.

Abstract: Provided is a broadband microstrip-waveguide transition apparatus operating in a millimeter waveband. The millimeter-wave band broadband microstrip-waveguide transition apparatus includes a slot for transferring an electromagnetic signal propagating along a microstrip line, a main patch positioned between the slot and a waveguide and resonating from the signal transferred from the slot, and a parasitic patch positioned between the main patch and the waveguide and resonating together with the main patch. According to the millimeter-wave band broadband microstrip-waveguide transition apparatus, it is possible to transfer a signal from the microstrip line to the waveguide, and to increase a resonance bandwidth to a broadband level.