Patents by Inventor Yong Wook Song

Yong Wook Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for reducing a thickness variation of a nitride layer formed in a shallow trench isolation CMP process and for forming a device isolation film of a semiconductor device
    Patent number: 7282421
    Abstract: A method for reducing a thickness variation of a nitride layer in a shallow trench isolation (STI) CMP process is provided, the method including forming an active region pattern in an alignment key region of a scribe lane where a device isolation film is formed at an ISO level, and forming a dummy active region pattern substantially adjacent to a vernier key pattern in the scribe lane during formation of the vernier key pattern, wherein the dummy active region pattern is spaced apart from the vernier key pattern by a known distance. Preferably, the active region pattern and the dummy active region pattern are formed prior to the STI CMP process.
    Type: Grant
    Filed: November 30, 2004
    Date of Patent: October 16, 2007
    Assignee: Hynix Semiconductor Inc.
    Inventors: Yong Soo Choi, Hyuk Kwon, Sang Hwa Lee, Geun Min Choi, Yong Wook Song, Gyu Han Yoon