Abstract: A system for a semiconductor fabrication facility comprises a transporting tool configured to move a carrier, a first manufacturing tool configured to accept the carrier facing in a first direction, a second manufacturing tool configured to accept the carrier facing in the second direction, and an orientation tool. The carrier is moved to the orientation tool by the transporting tool prior to being moved to the first manufacturing tool or the second manufacturing tool by the transporting tool. The orientation tool rotates the carrier so that the carrier is accepted by the first manufacturing tool or the second manufacturing tool. The transporting tool, the first manufacturing tool, the second manufacturing tool and the orientation tool are physically separated from each other.

Abstract: A method for improving a performance of a heterojunction bipolar transistor is provided. The method includes steps of providing a substrate; forming a first at least one semiconductor layer on the substrate; forming a second at least one semiconductor layer on the first at least one semiconductor layer; and inserting a thermal treatment process within the second at least one semiconductor layer so as to improve a performance of the heterojuntion bipolar transistor. Furthermore, the thermal treatment process is performed at a temperature ranged from 300° C. to 800° C.