Patents by Inventor Yongfeng Shen

Yongfeng Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nano icrystals copper material with super high strength and conductivity and method of preparing thereof
    Patent number: 7736448
    Abstract: The present invention relates to a nanocrystalline metallic material, particularly to nano-twin copper material with ultrahigh strength and high electrical conductivity and its preparation method. High-purity polycrystalline Cu material with a microstructure of roughly equiaxed submicron-sized grains (300-1000 nm) has been produced by pulsed electrodeposition technique, by which high density of growth-in twins with nano-scale twin spacing were induced in the grains. Inside each grain, there are high densities of growth-in twin lamellae. The twin lamellae with the same orientations are inter-parallel, and the twin spacing ranges from several nanometers to 100 nm with a length of 100-500 nm. This Cu material invented has more excellent performance than existing ones.
    Type: Grant
    Filed: October 16, 2003
    Date of Patent: June 15, 2010
    Assignee: Institute of Metal Research Chinese Academy of Sciences
    Inventors: Lei Lu, Xiao Si, Yongfeng Shen, Ke Lu
  • Nano icrystals copper material with super high strength and conductivity and method of preparing thereof
    Publication number: 20060021878
    Abstract: The present invention relates to a nanocrystalline metallic material, particularly to nano-twin copper material with ultrahigh strength and high electrical conductivity and its preparation method. High-purity polycrystalline Cu material with a microstructure of roughly equiaxed submicron-sized grains (300-1000 nm) has been produced by pulsed electrodeposition technique, by which high density of growth-in twins with nano-scale twin spacing were induced in the grains. Inside each grain, there are high densities of growth-in twin lamellae. The twin lamellae with the same orientations are inter-parallel, and the twin spacing ranges from several nanometers to 100 nm with a length of 100-500 nm. This Cu material invented has more excellent performance than existing ones.
    Type: Application
    Filed: October 16, 2003
    Publication date: February 2, 2006
    Inventors: Lei Lu, Xiao Si, Yongfeng Shen, Ke Lu