Abstract: In a magnetic sensor, first and second resistors are provided in a path that connects a power supply port and a first output port, and third and fourth resistors are provided in a path that connects a ground port and the first output port. In a direction parallel to an X direction, both of a distance between the first resistor and the second resistor and a distance between the third resistor and the fourth resistor are ?/2, and a distance between the first resistor and the third resistor is zero. A magnetization of a magnetization pinned layer in the first and fourth resistors contains a component in a ?X direction. The magnetization of the magnetization pinned layer in the second and third resistors contains a component in the X direction.

Abstract: A magnetic sensor device includes a magnetic field converter that receives an input magnetic field input along a first direction and outputs an output magnetic field along a second direction, which is orthogonal to the first direction. A magnetic field detector is provided at a position where the output magnetic field is applied. A magnetic shield shields external magnetic fields along a third direction, which is orthogonal to both the first direction and the second direction. When viewed along the first direction, the magnetic field converter has a shape such that the length in the third direction is greater than the length in the second direction. When viewed along the first direction, the magnetic shield is provided at a position overlapping the magnetic field converter and the magnetic field detector, and the magnetic field transmittance of the external magnetic field is 1-30%.

Abstract: A magnetism detection device according to an embodiment of the disclosure includes a sensor section and a resistive section. The sensor section includes a first magnetism detection element. The first magnetism detection element has a first stacked structure and is configured to detect a magnetic field to be detected. The resistive section includes a first resistive element and is coupled to the sensor section. The first resistive element has the first stacked structure.

Abstract: A position detection device includes a magnetic field generator and a magnetic sensor. The magnetic field generator is configured so that a mode of variation of a direction of a target magnetic field relative to variations in a position of a lens is such that the direction of the target magnetic field varies nonlinearly relative to the variations in the position of the lens. The magnetic sensor is configured so that a mode of variation of a detection signal relative to variations in the direction of the target magnetic field is such that the detection signal varies nonlinearly relative to the variations in the direction of the target magnetic field.

Abstract: A magnetic sensor includes first to fourth resistors, a power supply port, a ground port, a first output port, and a second output port. The first resistor and the second resistor are located in a first region and connected in series via a first connection point connected to the first output port. The third resistor and the fourth resistor are located in a second region and connected in series via a second connection point connected to the second output port, at least a part of the second region being located at a position different from the first region in a direction parallel to an X direction. The first and second resistors are located between the third and fourth resistors in a direction parallel to a Y direction.

Abstract: A magnetism detection device according to an embodiment of the disclosure includes a sensor section and a resistive section. The sensor section includes a first magnetism detection element. The first magnetism detection element has a first stacked structure and is configured to detect a magnetic field to be detected. The resistive section includes a first resistive element and is coupled to the sensor section. The first resistive element has the first stacked structure.

Abstract: An electronic component package of an embodiment of the disclosure includes a base, a first plated layer, a first electronic component chip, a second plated layer, and a second electronic component chip. The base includes a first surface and a second surface. The first plated layer covers the first surface. The first electronic component chip is provided on the first plated layer with a first insulating layer being interposed therebetween. The second plated layer covers the second surface. The second electronic component chip is provided on the second plated layer with a second insulating layer being interposed therebetween. The first plated layer and the second plated layer each include a first metal material that is less likely to undergo an ion migration phenomenon than silver (Ag).

Abstract: A position detection unit includes a magnetic sensor and a first magnetic field generator. The first magnetic field generator is spaced from and opposed to the magnetic sensor in a first-axis direction, includes a first multipolar magnet, and generates a first magnetic field to be exerted on the magnetic sensor. The first multipolar magnet includes N and S poles adjacent to each other along a plane orthogonal to the first-axis direction. The magnetic sensor and the first magnetic field generator are relatively movable with respect to each other along a second-axis direction orthogonal to the first-axis direction. A center position of the magnetic sensor in a third-axis direction orthogonal to both of the first-axis direction and the second-axis direction is different from a position in the third-axis direction of an interface between the N and S poles adjacent to each other in the third-axis direction.

Abstract: A magnetic sensor includes a first resistor having a first resistance and a first correction resistor having a second resistance. The first resistor and the first correction resistor are connected in series. The first resistor is configured so that the first resistance changes periodically as strength of a magnetic field component changes periodically. The first correction resistor is configured so that a change in a sum of the first resistance and the second resistance due to a noise magnetic field is smaller than a change in the first resistance due to the noise magnetic field.

Abstract: An electronic component package of an embodiment of the disclosure includes a base, a first plated layer, a first electronic component chip, a second plated layer, and a second electronic component chip. The base includes a first surface and a second surface. The first plated layer covers the first surface. The first electronic component chip is provided on the first plated layer with a first insulating layer being interposed therebetween. The second plated layer covers the second surface. The second electronic component chip is provided on the second plated layer with a second insulating layer being interposed therebetween. The first plated layer and the second plated layer each include a first metal material that is less likely to undergo an ion migration phenomenon than silver (Ag).

Abstract: A magnetic sensor capable of reducing noise caused by an interference magnetic field and capable of outputting a highly accurate signal in accordance with changes in a detected magnetic field includes a magnetic detection element, a first magnetic body having a first surface and a second surface, which is opposite to the first surface, and a second magnetic body positioned approximately in the center of the first magnetic body in the short direction on the first surface of the first magnetic body. The magnetic detection element is provided to be opposite to the second magnetic body with the first magnetic body interposed in between and positioned approximately in the center of the first magnetic body in the short direction. The magnetic sensing direction of the magnetic detection element is a direction approximately parallel to the short direction of the first magnetic body and the second magnetic body, and a width W1 of the first magnetic body is larger than a width W2 of the second magnetic body.

Abstract: The position detecting device of the present invention is a device for detecting the position of a movable detection target within a predetermined movable range. The position detecting device comprises: a first magnet (13A) and a second magnet (13B) which are arranged so as to move integrally with the movement of the detection target; a first magnetic detecting circuit (20A) that detects the magnetic field of the first magnet (13A) and a second magnetic detecting circuit (20B) that detects the magnetic field of the second magnet (13B), which are arranged at positions outside the movable range; and a differential amplifier (8) that amplifies the difference between the detection signals of the magnetic field output from the first magnetic detecting circuit (20A) and the second magnetic detecting circuit (20B), and that outputs the amplified difference of the signal as a position detecting signal of the detection target.

Abstract: A position detection device includes a magnet that generates a magnetic field to be detected, and a magnetic sensor. The magnetic sensor detects the magnetic field to be detected and generates a detection value corresponding to the position of the magnet. The magnetic field to be detected has a first direction that changes within a first plane, at a reference position in the first plane. The magnetic sensor includes four MR elements. Each of the MR elements includes a first magnetic layer having first magnetization that can change in direction within a second plane corresponding to the each of the MR elements. The first plane and the second plane intersect at a dihedral angle ? other than 90°. A detection value depends on the direction of the first magnetization.

Abstract: A magnetic sensor device includes a magnetic field converter that receives an input magnetic field input along a first direction and outputs an output magnetic field along a second direction, which is orthogonal to the first direction. A magnetic field detector is provided at a position where the output magnetic field can be applied. A magnetic shield that blocks an external magnetic field along the second direction. is provided. The magnetic field converter has a shape in which the length in a third direction, which is orthogonal to both the first direction and the second direction, is longer than the length in the second direction, when viewed along the first direction. The magnetic shield is provided at a position overlapping with the magnetic field converter and the magnetic field detector, when viewed along the first direction.

Abstract: A magnetic sensor system includes a magnetic field generator and a magnetic sensor. The magnetic sensor includes a plurality of MR elements. The plurality of MR elements are each configured so that a bias magnetic field in a second direction orthogonal to a first direction is applied to a free layer, and to change in resistance with a strength of a magnetic field component. A maximum strength of the magnetic field component applied to each of the MR elements is greater than or equal to 1.2 times the strength of a bias magnetic field.

Abstract: A magnetic sensor includes first to fourth resistors, a power supply port, a ground port, a first output port, and a second output port. The first resistor and the second resistor are located in a first region and connected in series via a first connection point connected to the first output port. The third resistor and the fourth resistor are located in a second region and connected in series via a second connection point connected to the second output port, at least a part of the second region being located at a position different from the first region in a direction parallel to an X direction. The first and second resistors are located between the third and fourth resistors in a direction parallel to a Y direction.

Abstract: A magnetic sensor device having a spin-valve-type magnetoresistive effect element and capable of stably applying a bias magnetic field on the free layer of the magnetoresistive effect element includes a spin-valve-type magnetoresistive effect element, a substrate on which the magnetoresistive effect element is positioned, a power source that supplies a substantially constant electric current applied on the magnetoresistive effect element, and a magnetic field generator that is connected to the electric current path of the electric current applied on the magnetoresistive effect element in series. The magnetic field generator is provided to be capable of applying a bias magnetic field on at least a portion of the magnetoresistive effect element. The magnetic field generator is close to a portion of the magnetoresistive effect element and is positioned at a different level from the substrate.

Abstract: A position detection device includes a magnet that generates a magnetic field to be detected, and a magnetic sensor. The magnetic sensor detects the magnetic field to be detected and generates a detection value corresponding to the position of the magnet. The magnetic field to be detected has a first direction that changes within a first plane, at a reference position in the first plane. The magnetic sensor includes four MR elements. Each of the MR elements includes a first magnetic layer having first magnetization that can change in direction within a second plane corresponding to the each of the MR elements. The first plane and the second plane intersect at a dihedral angle ? other than 90°. A detection value depends on the direction of the first magnetization.

Abstract: A magnetic field generator generates a detection-target magnetic field related to an angle to be detected. An angle sensor includes a first and a second magnetic sensor and a processor. The first magnetic sensor detects, at a first detection position, a first applied magnetic field including the detection-target magnetic field, and generates first detection information having a correspondence with the angle to be detected. The second magnetic sensor detects, at a second detection position, a second applied magnetic field including the detection-target magnetic field, and generates second detection information having a correspondence with the angle to be detected. The processor generates an angle detection value by performing arithmetic processing using the first and second detection information. The ratio of a strength of the detection-target magnetic field at the second detection position to a strength of the detection-target magnetic field at the first detection position is 1.65 or more.

Abstract: In an assembly in which a space between two elements is filled with a filler containing resin, a configuration that can limit both the size of the assembly and the cost of the fillers is provided. An assembly of stacked elements has: first element having first surface; resin layer that is arranged on first surface and that contains a plurality of fillers; and second element that is arranged on resin layer and that has second surface that is in contact with resin layer. In a section that is perpendicular to second surface, the average flattening ratio of fillers that are in contact with second surface is larger than the average flattening ratio of fillers that are not in contact with second surface. Here, the flattening ratio is a ratio of the maximum length of the filler in a direction parallel to second surface to the maximum thickness of the filler in a direction perpendicular to second surface.