Abstract: The present invention relates to the field of fluid heat transfer, and discloses a heat transfer enhancement pipe as well as a cracking furnace and an atmospheric and vacuum heating furnace including the same. The heat transfer enhancement pipe (1) includes a pipe body (10) of tubular shape having an inlet (100) for entering of a fluid and an outlet (101) for said fluid to flow out; internal wall of the pipe body (10) is provided with a fin (11) protruding towards interior of the pipe body (10), the fin (11) spirally extends in an axial direction of the pipe body (10), wherein a height of the fin (11) gradually increases from one end in at least a part extension of the fin. The heat transfer enhancement pipe can reduce thermal stress of itself, thereby increasing service life of the heat transfer enhancement pipe.

Abstract: A solar cell string production equipment includes first and second conveying devices, first and second carrying devices, and a transfer device. The first conveying device has a first continuous conveyor belt, the second conveying device has a second continuous conveyor belt, and the first and second continuous conveyor belts can turn and convey in the vertical direction. Back and front films are laid on the first conveying device. The first conveying device can transport the back film on the first continuous conveyor belt to the second continuous conveyor belt. The transfer device can transport the pressing tool from the terminal of the second continuous conveyor belt to the front film on the first continuous conveyor belt. The second carrying device can transport the pressing tool and front film stacked together to the second continuous conveyor belt. A solar cell string production method is further provided.

Abstract: The disclosure provides a motor and a motor assembling method. The motor includes a housing having a bottom and a wall portion extending from an edge of the bottom along an axial direction, and a lid connected to the housing on one side in the axial direction of the bottom of the housing. A surface on the one side in the axial direction of the bottom of the housing has a first connection surface. Housing portions on an inside and an outside in a radial direction of the first connection surface are respectively bent in opposite directions intersecting the first connection surface, which ensures sufficient working space when performing work for connecting the housing and the lid.

Abstract: This disclosure provides a motor. The motor includes a housing and a lid molded by pressing. The lid includes a first wall portion extending along an axial direction. One side in the axial direction of the first wall portion is tightly fitted or loose-fitted to the housing, and the other side in the axial direction of the first wall portion is connected to an external device. This structure facilitates coaxial alignment and connection between the housing and the lid and reduces costs.

Abstract: Disclosed in the present disclosure is a double-deck multi-span bridge construction method. According to the double-deck bridge construction method of the present disclosure, construction is carried out by using a method of disassembling a support jig frame in a graded and span-separated mode, an upper chord jig frame and a lower chord jig frame can be used in a recycle manner, and construction costs are reduced. In addition, a construction period of building the support jig frame is shortened, and other construction operations can be synchronously carried out on a span in which the jig frame is disassembled, for example, fire retardant coating construction can be carried out on a mounted bridge deck after the jig frame is disassembled, and the construction period of a double-deck multi-span bridge is effectively shortened.

Abstract: Methods for forming a 3D memory device are provided. A method includes the following operations. A stack structure is formed in a staircase region and an array region. A dielectric material layer is formed over the array region and the staircase region. An etch mask layer is coated over the dielectric material layer. The etch mask layer, on a first surface away from the dielectric material layer, is planarized. The dielectric material layer and a remaining portion of the etch mask layer are etched to form a dielectric layer over the staircase region and the array region.

Abstract: In one aspect, a method for forming a 3D memory device is disclosed. A selective epitaxial sacrificial layer is formed above a substrate, and a dielectric stack is formed above the selective epitaxial sacrificial layer. A first opening extending vertically through the dielectric stack and the selective epitaxial sacrificial layer is formed. A portion of the first opening extending vertically through the selective epitaxial sacrificial layer is enlarged. A memory film and a semiconductor channel are subsequently formed in this order along sidewalls and a bottom surface of the first opening. The selective epitaxial sacrificial layer is removed to form a cavity exposing a portion of the memory film. The portion of the memory film exposed in the cavity is removed to expose a portion of the semiconductor channel. A selective epitaxial layer is epitaxially grown from the substrate to fill the cavity and be in contact with the portion of the semiconductor channel.

Abstract: The present application relates to a landing ramp, which includes a ramp body; the ramp body includes an inclined ramp, a granule retaining dam disposed at the lower end of the inclined ramp and protruding from a slope of the inclined ramp, and a deceleration ramp disposed on one side of the granule retaining dam away from the inclined ramp; a dry snow grass sliding blanket is provided on the deceleration ramp, a dry snow granule layer is provided on the inclined ramp and the dry snow grass sliding blanket; the dry snow grass sliding blanket includes a mounting mesh plate and a dry grass body provided on the mounting mesh plate, there are multiply dry grass body spacingly distributed, a dry snow granule is filled between the dry grass bodies, the aperture of the mounting mesh plate is smaller than the diameter of a dry snow granule.

Abstract: Embodiments of 3D memory devices having a pocket structure in memory strings and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a selective epitaxial layer on the substrate, a memory stack including interleaved conductive layers and dielectric layers on the selective epitaxial layer, and a memory string including a channel structure extending vertically in the memory stack and a pocket structure extending vertically in the selective epitaxial layer. The memory string includes a semiconductor channel extending vertically in the channel structure, and extending vertically and laterally in the pocket structure and in contact with the selective epitaxial layer.

Abstract: Embodiments of wet processing systems and methods for uniform wet processing are disclosed. A method described in the present disclosure includes measuring one or more wafer characteristics of a wafer using a plurality of detectors and determining a wafer profile of the wafer based on the measured one or more wafer characteristics. The method also includes setting first and second sets of wet processing parameters of a wet processing system for respective first and second wafer regions based on the wafer profile, where a value of at least one wet processing parameter is different between the first and second sets of wet processing parameters. The method further includes performing wet processing on the wafer by dispensing one or more chemicals onto the first and second wafer regions according to the respective first and second sets of wet processing parameters.

Abstract: Embodiments of three-dimensional (3D) memory devices with an enlarged joint critical dimension and methods for forming the same are disclosed. In an example, a 3D memory device is disclosed. The 3D memory device includes a substrate, a memory stack having a plurality of interleaved conductor layers and dielectric layers on the substrate, and a memory string extending vertically through the first memory stack and having a memory film along a sidewall of the memory string. The memory film includes a discontinuous blocking layer interposed by the dielectric layers.

Abstract: Aspects of the disclosure provide a semiconductor device and a method for fabricating the same. The method for fabricating the semiconductor device can include forming a stack of alternating first insulating layers and first sacrificial layers over a semiconductor substrate, and forming a staircase in the stack having a plurality of steps, with at least a first step of the staircase including a first sacrificial layer of the first sacrificial layers over a first insulating layer of the first insulating layers. Further, the method can include forming a recess in the first sacrificial layer, forming a second sacrificial layer in the recess, and replacing a portion of the first sacrificial layer and the second sacrificial layer with a conductive material that forms a contact pad.

Abstract: Embodiments of three-dimensional (3D) memory devices with an enlarged joint critical dimension and methods for forming the same are disclosed. In an example, a 3D memory device is disclosed. The 3D memory device includes a substrate, a memory stack having a plurality of interleaved conductor layers and dielectric layers on the substrate, and a memory string extending vertically through the first memory stack and having a memory film along a sidewall of the memory string. The memory film includes a discontinuous blocking layer interposed by the dielectric layers.

Abstract: Embodiments of 3D memory devices having a pocket structure in memory strings and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a selective epitaxial layer on the substrate, a memory stack including interleaved conductive layers and dielectric layers on the selective epitaxial layer, and a memory string including a channel structure extending vertically in the memory stack and a pocket structure extending vertically in the selective epitaxial layer. The memory string includes a semiconductor channel extending vertically in the channel structure, and extending vertically and laterally in the pocket structure and in contact with the selective epitaxial layer.

Abstract: A sliding carpet assembly and a sliding carpet. The sliding carpet assembly comprises multiple roll shaft units. Each roll shaft unit comprises a roll shaft (310), and a fixing catch (210) in contact with and connected to one side of the roll shaft (310). The fixing catch (210) includes a supporting body. The supporting body is provided with a first through hole (213) and a second through hole (214). The axis of the first through hole (213) and the axis of the second through hole (214) are perpendicular to each other and do not intersect with each other. Moreover, the sliding carpet assembly further includes multiple connecting ropes (100). In a first direction, the connecting ropes (100) pass through the first through holes (213) to connect the multiple sequentially arranged roll shaft units in series.

Abstract: Embodiments of wet processing systems and methods for uniform wet processing are disclosed. A method described in the present disclosure includes measuring one or more wafer characteristics of a wafer using a plurality of detectors and determining a wafer profile of the wafer based on the measured one or more wafer characteristics. The method also includes setting first and second sets of wet processing parameters of a wet processing system for respective first and second wafer regions based on the wafer profile, where a value of at least one wet processing parameter is different between the first and second sets of wet processing parameters. The method further includes performing wet processing on the wafer by dispensing one or more chemicals onto the first and second wafer regions according to the respective first and second sets of wet processing parameters.

Abstract: Embodiments of an etching method for a material layer of a NAND memory device are disclosed. An example method of chemically etching a material layer on one or more substrates includes mixing an etchant solution within a bath and allowing the etchant solution to reach a quiescent state. After the etchant solution has reached the quiescent state, the method includes loading the one or more substrates into the bath. The one or more substrates includes a plurality of openings having the material layer disposed on an inside surface of the plurality of openings. The method also includes allowing the one or more substrates to remain in the bath for a predetermined time period, such that a thickness of the material layer is reduced by the etchant solution.

Abstract: A sliding carpet assembly and a sliding carpet. The sliding carpet assembly comprises multiple roll shaft units. Each roll shaft unit comprises a roll shaft (310), and a fixing catch (210) in contact with and connected to one side of the roll shaft (310). The fixing catch (210) includes a supporting body. The supporting body is provided with a first through hole (213) and a second through hole (214). The axis of the first through hole (213) and the axis of the second through hole (214) are perpendicular to each other and do not intersect with each other. Moreover, the sliding carpet assembly further includes multiple connecting ropes (100). In a first direction, the connecting ropes (100) pass through the first through holes (213) to connect the multiple sequentially arranged roll shaft units in series.

Abstract: Embodiments of an etching method for a material layer of a NAND memory device are disclosed. An example method of chemically etching a material layer on one or more substrates includes mixing an etchant solution within a bath and allowing the etchant solution to reach a quiescent state. After the etchant solution has reached the quiescent state, the method includes loading the one or more substrates into the bath. The one or more substrates includes a plurality of openings having the material layer disposed on an inside surface of the plurality of openings. The method also includes allowing the one or more substrates to remain in the bath for a predetermined time period, such that a thickness of the material layer is reduced by the etchant solution.