Patents by Inventor YONG-GEUN OH
YONG-GEUN OH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984587Abstract: The present invention relates to: a negative electrode active material including silicon-based composite particles containing SiOx (0<x<2) and a MgSiO3 phase, wherein the MgSiO3 phase includes a first MgSiO3 phase having an enstatite structure and a second MgSiO3 phase having a clinoenstatite structure at a weight ratio of 1:1 to 1:5; a negative electrode including the same; and a secondary battery including the negative electrode.Type: GrantFiled: September 10, 2021Date of Patent: May 14, 2024Assignee: LG ENERGY SOLUTION, LTD.Inventors: Il Geun Oh, Sun Young Shin, Se Hui Sohn, Yong Ju Lee, Se Mi Park
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Patent number: 11972136Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.Type: GrantFiled: October 12, 2022Date of Patent: April 30, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun-Seok Kim, Dae-Ho Kim, Yong-Geun Oh, Sung-Jin Moon
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Patent number: 11960752Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.Type: GrantFiled: June 24, 2021Date of Patent: April 16, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun-Seok Kim, Dae-Ho Kim, Yong-Geun Oh, Sung-Jin Moon
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Patent number: 11942640Abstract: Provided is a negative electrode active material for a lithium secondary battery which includes: a silicon-silicon oxide-magnesium silicate composite comprising a silicon oxide (SiOx, 0<x?2) matrix; and silicon (Si) crystal grains, MgSiO3 crystal grains and Mg2SiO4 crystal grains present in the silicon oxide matrix, wherein the MgSiO3 crystal grains have a crystal size of 5-30 nm and the Mg2SiO4 crystal grains have a crystal size of 20-100 nm in the silicon-silicon oxide-magnesium silicate composite, and the content ratio of MgSiO3 crystal grains to Mg2SiO4 crystal grains is 2:1-1:1 on the weight basis. A method for preparing the negative electrode active material for a lithium secondary battery is also provided.Type: GrantFiled: January 20, 2020Date of Patent: March 26, 2024Assignee: LG Energy Solution, Ltd.Inventors: Il-Geun Oh, Dong-Hyuk Kim, Yong-Ju Lee
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Publication number: 20230111732Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.Type: ApplicationFiled: October 12, 2022Publication date: April 13, 2023Inventors: HYUN-SEOK KIM, Dae-Ho Kim, Yong-geun Oh, Sung-Jin Moon
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Publication number: 20210326059Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.Type: ApplicationFiled: June 24, 2021Publication date: October 21, 2021Inventors: HYUN-SEOK KIM, DAE-HO KIM, YONG-GEUN OH, SUNG-JIN MOON
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Patent number: 11093166Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.Type: GrantFiled: January 7, 2019Date of Patent: August 17, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun-Seok Kim, Dae-Ho Kim, Yong-Geun Oh, Sung-Jin Moon
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Publication number: 20190155538Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.Type: ApplicationFiled: January 7, 2019Publication date: May 23, 2019Inventors: Hyun-Seok Kim, Dae-Ho Kim, Yong-Geun Oh, Sung-Jin Moon
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Patent number: 10198214Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.Type: GrantFiled: January 21, 2015Date of Patent: February 5, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun-Seok Kim, Dae-Ho Kim, Yong-Geun Oh, Sung-Jin Moon
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Publication number: 20150301744Abstract: A method of operating a memory system, which includes a memory controller and at least one non-volatile memory, includes storing, in the memory system, temperature-dependent performance level information received from a host disposed external to the memory system, setting an operation performance level of the memory system to a first performance level, operating the memory controller and the at least one non-volatile memory device according to the first performance level, detecting an internal temperature of the memory system, and changing the operation performance level of the memory system to a second performance level that is different from the first performance level. The operation performance level is changed by the memory controller of the memory system, and changing the operation performance level is based on the temperature-dependent performance level information and the detected internal temperature.Type: ApplicationFiled: January 21, 2015Publication date: October 22, 2015Inventors: HYUN-SEOK KIM, DAE-HO KIM, YONG-GEUN OH, SUNG-JIN MOON