Abstract: Disclosed is a technique for switching from a master node to a secondary node in a communication system. A method of a first communication node may comprise: adding the first communication node as a primary secondary cell (PSCell) to a second communication node through dual connectivity (DC); generating a first user plane path for smart dynamic switching (SDS) and a first instance for supporting the first user plane path according to a request from the second communication node; transmitting information on the first user plane path and the first instance to a terminal; receiving user data based on the first user plane path from the terminal as the first instance; and transmitting the user data to a core network using the first user plane path.

Abstract: A substrate processing facility includes a cleaning device for cleaning a substrate; and a drying device for drying the substrate cleaned by the cleaning device with a supercritical gas, wherein the cleaning device includes a sulfuric acid cleaning chamber.

Abstract: A battery module includes at least two cell assemblies, a module housing having an upper cover formed by a top portion and a first side portion extending downward from a first side edge of the top portion, a first gas passage formed between the first side portion of the upper cover and a first side of the at least two cell assemblies for circulation of gas generated from the at least two cell assemblies, and a flame retardant plate in the first gas passage and extending between the at least two cell assemblies and the module housing, wherein the first side portion of the upper cover is coupled to the flame retardant plate.

Abstract: The present disclosure relates to a chalcogenide glass composition and a lens including a molded article of the same, which are capable of guaranteeing excellent refractive index, Vickers hardness, and price competitiveness without including an element such as arsenic harmful to the human body.

Abstract: An electrically scanned TACAN antenna is provided. To elaborate, the electrically scanned TACAN antenna includes a reflection plate; a monopole antenna provided on an upper surface of the reflection plate and configured to omnidirectionally radiate a signal; multiple parasitic radiators arranged around the monopole antenna and configured to operate as reflectors that reflect the signal or directors that direct the signal; and a controller configured to control parasitic radiators operating as the reflectors to operate as the directors and some parasitic radiators among parasitic radiators operating as the directors to operate as the reflectors at every predetermined timing and controls an order to be the some parasitic radiators to be changed according to a preset sequence.

Abstract: A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.

Abstract: An electrically scanned TACAN antenna is provided. To elaborate, the electrically scanned TACAN antenna includes a reflection plate; a monopole antenna provided on an upper surface of the reflection plate and configured to omnidirectionally radiate a signal; multiple parasitic radiators arranged around the monopole antenna and configured to operate as reflectors that reflect the signal or directors that direct the signal; and a controller configured to control parasitic radiators operating as the reflectors to operate as the directors and some parasitic radiators among parasitic radiators operating as the directors to operate as the reflectors at every predetermined timing and controls an order to be the some parasitic radiators to be changed according to a preset sequence.

Abstract: A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.

Abstract: A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.

Abstract: A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.

Abstract: A semiconductor device with an increased effective channel length and a method of manufacturing the same. The device includes a semiconductor substrate, a gate insulating layer disposed on the semiconductor substrate, a gate electrode structure disposed on a predetermined portion of the gate insulating layer, an insulating layer for preventing short channel disposed on the surface of the resultant structure where the gate electrode structure is disposed, and a source region and a drain region disposed in the semiconductor substrate on either side of the gate electrode structure. Both the source region and the drain region are spaced apart from the gate electrode structure by the thickness of the insulating layer. The channel length of a MOS transistor can be thereby increased.

Abstract: The present invention is a thulium doped silicate glass having an excellent fluorescent emission in the 1.4 ?m band, and the usage thereof. The silicate glass of this invention includes: 65˜95 mol % SiO2; 0.5˜30 mol % bivalent metal oxide consisting of one or more material selected from ZnO, BaO, SrO and PbO; and 1˜15 mol % of SnO2 or TiO2, wherein 3˜30 mol % oxygen of the glass composition are replaced with fluorine, and 0.01˜1 mol % of thulium ions are doped, and the fluorescence lifetime of the 3H4 level of the Tm3+ is more than 50 ?s. The silicate glass can be easily formed into a waveguide, such as optical fiber, and it has an excellent ability to splice with the optical fiber for transmission. They have excellent chemical durability and the characteristic of 1.4 ?m band fluorescent emission by suppressing the non-radiative transition through multi-phonon relaxation. Thus they have long fluorescence lifetime of the 3H4 of Tm3+.

Abstract: The present invention relates to a transmission optical fiber. The transmission optical fiber including a core and a cladding made of SiO2 is characterized in that GeO2 and F are doped in SiO2 of the core and the cladding. Therefore, a high Raman gain coefficient could be obtained while a desired dispersion value and a non-linearity are maintained, by controlling the refractive index of the core and the cladding. Further, the pump power of the laser diode could be reduced and the cost of the laser diode could be lowered accordingly. In addition, the life of the laser diode is extended since the laser diode needs not to be operated at a high output.

Abstract: The present invention relates to a main wavelength band of a pump light source capable of improving the pump efficiency while using 1.6 ?m fluorescence emitted from Ho3+:5I5?5I7 transition as an optical amplifier, and an assistant pump wavelength band capable of accomplishing population inversion between 5I5 level and 5I7 level to improve the signal gain characteristics of such amplifier. The optical amplifier using optical materials to which holmium or holmium and terbium, holmium and europium, holmium and neodymium or holmium and dysprosium, etc. are doped can be pumped using a light source that emits light of 11,200˜11,500 cm?1 or a light source that emits light of 6,000˜6,500 cm?1.

Abstract: A high-speed wavelength channel selector has properties of relatively easy manufacturing and easy extension to multi-channel integration, and a high-speed space and wavelength multiplexed channel selector uses the high-speed wavelength channel selector. The high-speed wavelength channel selector is integrated with electro-optic waveguide switches of non-crystalline materials, such as electro-optic polymers or glasses, in the middle of a pair of wavelength multiplexer and demultiplexer and the high-speed space and wavelength multiplexed channel selector has the photonic integrated circuit-type composition of a space multiplexed channel selector containing M electro-optic waveguide switches and an M×1 channel combiner, the high-speed wavelength channel selector, optical amplifier and a high-speed wavelength converter.

Abstract: A semiconductor device with an increased effective channel length and a method of manufacturing the same. The device includes a semiconductor substrate, a gate insulating layer disposed on the semiconductor substrate, a gate electrode structure disposed on a predetermined portion of the gate insulating layer, an insulating layer for preventing short channel disposed on the surface of the resultant structure where the gate electrode structure is disposed, and a source region and a drain region disposed in the semiconductor substrate on either side of the gate electrode structure. Both the source region and the drain region are spaced apart from the gate electrode structure by the thickness of the insulating layer. The channel length of a MOS transistor can be thereby increased.

Abstract: A multiple optical fiber coupler manufacturing apparatus which can manufacture a plurality of the optical fiber couplers is disclosed. The multiple optical fiber coupler manufacturing apparatus comprises multiple micro torch for heating portions of a plurality of optical fibers so as to fuse the optical fibers two by two; multiple optical fiber holders symmetrically arranged on the basis of said multiple micro torch, for fixing the plurality of the optical fibers two by two at a same interval; and a carrying stage having said multiple micro torch and said multiple optical fiber holders mounted thereon such that said multiple optical fiber holder can be moved.

Abstract: The present invention relates to a transmission optical fiber. The transmission optical fiber including a core and a cladding made of SiO2 is characterized in that GeO2 and F are doped in SiO2 of the core and the cladding. Therefore, a high Raman gain coefficient could be obtained while a desired dispersion value and a non-linearity are maintained, by controlling the refractive index of the core and the cladding. Further, the pump power of the laser diode could be reduced and the cost of the laser diode could be lowered accordingly. In addition, the life of the laser diode is extended since the laser diode needs not to be operated at a high output.

Abstract: The present invention relates to a main wavelength band of a pump light source capable of improving the pump efficiency while using 1.6 &mgr;m fluorescence emitted from Ho3+:5I5→5I7 transition as an optical amplifier, and an assistant pump wavelength band capable of accomplishing population inversion between 5I5 level and 5I7 level to improve the signal gain characteristics of such amplifier. The optical amplifier using optical materials to which holmium or holmium and terbium, holmium and europium, holmium and neodymium or holmium and dysprosium, etc. are doped can be pumped using a light source that emits light of 11,200˜11,500 cm−1 or a light source that emits light of 6,000˜6,500 cm−1.

Abstract: The present invention relates to the fabrication of an optical device; and, more particularly to an electrode for fabricating periodically poled optical fibers and a fabrication method of periodically poled optical fibers using the electrode. To fabricate periodically poled optical fibers for improving the effect of three wave mixing in accordance with the second-order nonlinear optical phenomenon, the periodically poled optical fibers of the present invention is formed by using one or more electrodes with holes or grooves for a period satisfying the quasi phase matching condition between light waves in use. Also, using the electrodes described above, one or more holes or one or more grooves are formed on the surface of the optical fiber around the core in its length direction, and thereby make an optical fiber poled periodically.