Patents by Inventor Yonghao DU

Yonghao DU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing semiconductor structure, semiconductor structure, and memory
    Patent number: 12230668
    Abstract: A method for manufacturing a semiconductor structure includes the following operations. A substrate is provided. A lower electrode is formed on the substrate. A capacitor dielectric layer is formed on a surface of the lower electrode. The capacitor dielectric layer includes at least one zirconium oxide layer. The capacitor dielectric layer is subjected with microwave annealing treatment to convert a crystal phase of zirconium oxide to a tetragonal crystal phase. An upper electrode is formed on a surface of the capacitor dielectric layer.
    Type: Grant
    Filed: October 28, 2021
    Date of Patent: February 18, 2025
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventor: Yonghao Du
  • METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY
    Publication number: 20220102481
    Abstract: A method for manufacturing a semiconductor structure includes the following operations. A substrate is provided. A lower electrode is formed on the substrate. A capacitor dielectric layer is formed on a surface of the lower electrode. The capacitor dielectric layer includes at least one zirconium oxide layer. The capacitor dielectric layer is subjected with microwave annealing treatment to convert a crystal phase of zirconium oxide to a tetragonal crystal phase. An upper electrode is formed on a surface of the capacitor dielectric layer.
    Type: Application
    Filed: October 28, 2021
    Publication date: March 31, 2022
    Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventor: Yonghao DU