Patents by Inventor Yong Hun Jeong

Yong Hun Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DISPLAY DEVICE INCLUDING VAPOR CHAMBERS
    Publication number: 20250040112
    Abstract: A display device includes: a display panel; a heat dissipation sheet on a surface of the display panel; a circuit board electrically connected to the display panel, the circuit board being on a surface of the heat dissipation sheet; and a vapor chamber attached to the surface of the heat dissipation sheet to emit heat transferred through the heat dissipation sheet. The circuit board overlaps with a first area of the heat dissipation sheet. A first part of the vapor chamber is attached to a second area of the heat dissipation sheet, and a second part of the vapor chamber is spaced apart from the heat dissipation sheet.
    Type: Application
    Filed: March 4, 2024
    Publication date: January 30, 2025
    Inventors: Byoung Kyoo PARK, Ja Hun KOO, Yong Il KIM, Wee Joon JEONG, Jang Un CHOI
  • Semiconductor device
    Patent number: 9496357
    Abstract: A trench MOSFET including: an epitaxial layer; a body region on the epitaxial layer, the body region and the epitaxial layer forming a first interface; a trench; a trench bottom oxide in the trench; and polysilicon in the trench, the trench bottom oxide and the polysilicon forming a second interface; where the first and second interfaces are substantially aligned or are at substantially the same level.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: November 15, 2016
    Assignee: X-FAB SEMICONDUCTOR FOUNDRIES AG
    Inventors: Yong Hun Jeong, Bui Ngo Bong, Yen Thing Tay, Iliyana Manso
  • SEMICONDUCTOR DEVICE
    Publication number: 20140231905
    Abstract: A trench MOSFET including: an epitaxial layer; a body region on the epitaxial layer, the body region and the epitaxial layer forming a first interface; a trench; a trench bottom oxide in the trench; and polysilicon in the trench, the trench bottom oxide and the polysilicon forming a second interface; where the first and second interfaces are substantially aligned or are at substantially the same level.
    Type: Application
    Filed: July 22, 2011
    Publication date: August 21, 2014
    Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AG
    Inventors: Yong Hun Jeong, Bui Ngo Bong, Yen Thing Tay, Iliyana Manso