Patents by Inventor Yong Hun Jeong

Yong Hun Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9496357
    Abstract: A trench MOSFET including: an epitaxial layer; a body region on the epitaxial layer, the body region and the epitaxial layer forming a first interface; a trench; a trench bottom oxide in the trench; and polysilicon in the trench, the trench bottom oxide and the polysilicon forming a second interface; where the first and second interfaces are substantially aligned or are at substantially the same level.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: November 15, 2016
    Assignee: X-FAB SEMICONDUCTOR FOUNDRIES AG
    Inventors: Yong Hun Jeong, Bui Ngo Bong, Yen Thing Tay, Iliyana Manso
  • Publication number: 20140231905
    Abstract: A trench MOSFET including: an epitaxial layer; a body region on the epitaxial layer, the body region and the epitaxial layer forming a first interface; a trench; a trench bottom oxide in the trench; and polysilicon in the trench, the trench bottom oxide and the polysilicon forming a second interface; where the first and second interfaces are substantially aligned or are at substantially the same level.
    Type: Application
    Filed: July 22, 2011
    Publication date: August 21, 2014
    Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AG
    Inventors: Yong Hun Jeong, Bui Ngo Bong, Yen Thing Tay, Iliyana Manso