Abstract: Disclosed is a high-pressure annealing device including a nozzle assembly. The high-pressure annealing device is configured to prevent, when gas is supplied to the inside of a chamber of the high-pressure annealing device through a gas nozzle, damage generated during coupling of the gas nozzle to a gas supply module.

Abstract: A semiconductor package is provided and includes: a base substrate; an interposer package on the base substrate; and first and second semiconductor chips on the interposer package, wherein the interposer package includes: a first redistribution structure including a first insulating layer, a second insulating layer on the first insulating layer, and first and second redistribution layers respectively disposed on the first and second insulating layers; a bridge chip on a bottom surface of the first redistribution structure; a connection structure on the bottom surface of the first redistribution structure and including a plurality of wiring layers electrically connected to the first and second semiconductor chips; and a bonding structure disposed on a third insulating layer on the second insulating layer and bonding each of the first and second semiconductor chips to the first redistribution structure, wherein the second redistribution layer includes a contact plug within the third insulating layer.

Abstract: Disclosed is a high-pressure annealing device including an internal chamber configured to provide an internal space, an external chamber configured to accommodate the internal chamber therein, a heating module configured to perform heat treatment and disposed in an external space provided between the internal chamber and the external chamber, and a shielding element configured to seal the lower portion of the external space, thereby preventing dispersion of particles generated from the heating module and preventing contamination of a substrate (a semiconductor wafer) due to the particles.

Abstract: Disclosed are a jig device for attachment and detachment of a heater unit, a system for attachment and detachment of the heater unit, and a high-pressure annealing device capable of attaching and detaching the heater unit thereto and therefrom. The heater unit is attachable to or detachable from the high-pressure annealing device through upward movement or downward movement of the heater unit from or toward the lower portion of an outer chamber in a state in which the heater unit disposed in the high-pressure annealing device is supported by the jig device.

Abstract: A substrate processing apparatus includes a chamber, a chamber door, an outer chamber, and a locking mechanism, in which the chamber door includes a first flange on which a substrate loader or a lower heater accommodating the substrate is placed, a rotating flange rotatably connected to the first flange, and a second flange disposed below the first flange and rotatably connected to the rotating flange.

Abstract: A door part used in a semiconductor substrate processing device includes a first flange on which a loader accommodating a wafer is placed, a second flange connected to a lower portion of the first flange, a caught protrusion part extending downward from an edge of the first flange, a door disposed below the second flange, and a guide connected to an upper surface of the door and in which a groove corresponding to a shape of at least a portion of the caught protrusion part is formed so that the caught protrusion part sits on the groove, in which the caught protrusion part is unseated from the groove of the guide depending on a height between the first flange and the door, and the door is rotatable when the caught protrusion part is unseated from the groove.

Abstract: A substrate processing apparatus includes a chamber, a chamber door configured to open or close a chamber opening, an outer chamber configured to surround the chamber, in which the outer chamber includes an outer chamber upper surface, an outer chamber side surface, and an outer chamber base on an opposite side of the outer chamber upper surface and configured to seal between a chamber side surface and the outer chamber side surface, in which the outer chamber upper surface, the outer chamber side surface, and the outer chamber base form a sealed space between the outer chamber and the chamber.

Abstract: A semiconductor package is provided and includes: a base substrate; an interposer package on the base substrate; and first and second semiconductor chips on the interposer package, wherein the interposer package includes: a first redistribution structure including a first insulating layer, a second insulating layer on the first insulating layer, and first and second redistribution layers respectively disposed on the first and second insulating layers; a bridge chip on a bottom surface of the first redistribution structure; a connection structure on the bottom surface of the first redistribution structure and including a plurality of wiring layers electrically connected to the first and second semiconductor chips; and a bonding structure disposed on a third insulating layer on the second insulating layer and bonding each of the first and second semiconductor chips to the first redistribution structure, wherein the second redistribution layer includes a contact plug within the third insulating layer.

Abstract: An apparatus for controlling tip clearance between a turbine casing and a turbine blade is provided. The apparatus for controlling tip clearance includes a casing surrounding the turbine blade, a cooling plate installed in a groove and formed in a circumferential direction in the casing, the cooling plate being contracted by cold air supplied thereto, an upper plate mounted radially outside the cooling plate in the groove and having a plurality of cold air holes formed therein, a cylinder extending radially from an inner peripheral surface of the upper plate and having a plurality of cooling holes formed on a side thereof, and a ring segment mounted radially inside the cooling plate.

Abstract: An apparatus for controlling tip clearance between a turbine casing and a turbine blade is provided. The apparatus for controlling tip clearance includes a casing surrounding the turbine blade, a cooling plate installed in a groove, formed in a circumferential direction in the casing, and contracted by cold air supplied thereto, the cooling plate having at least one fin formed on an outer peripheral surface thereof, and a ring segment mounted radially inside the cooling plate.

Abstract: A semiconductor package is provided. The semiconductor package includes a connection structure, a semiconductor chip, and a connection metal. The connection structure includes a redistribution layer and a connection via layer. The semiconductor chip is disposed on the connection structure, and includes a connection pad. The connection metal is disposed on the connection structure and is electrically connected to the connection pad by the connection structure. The connection via layer includes a connection via having a major axis and a minor axis, and in a plan view, the minor axis of the connection via intersects with the connection metal.

Abstract: An apparatus for controlling tip clearance between a turbine casing and a turbine blade is provided. The apparatus for controlling tip clearance includes a casing surrounding the turbine blade, a cooling plate installed in a groove, formed in a circumferential direction in the casing, and contracted by cold air supplied thereto, the cooling plate having at least one fin formed on an outer peripheral surface thereof, and a ring segment mounted radially inside the cooling plate.

Abstract: An apparatus for controlling tip clearance between a turbine casing and a turbine blade is provided. The apparatus for controlling tip clearance includes a casing surrounding the turbine blade, a cooling plate installed in a groove and formed in a circumferential direction in the casing, the cooling plate being contracted by cold air supplied thereto, an upper plate mounted radially outside the cooling plate in the groove and having a plurality of cold air holes formed therein, a cylinder extending radially from an inner peripheral surface of the upper plate and having a plurality of cooling holes formed on a side thereof, and a ring segment mounted radially inside the cooling plate.

Abstract: A semiconductor package is provided. The semiconductor package includes a connection structure, a semiconductor chip, and a connection metal. The connection structure includes a redistribution layer and a connection via layer. The semiconductor chip is disposed on the connection structure, and includes a connection pad. The connection metal is disposed on the connection structure and is electrically connected to the connection pad by the connection structure. The connection via layer includes a connection via having a major axis and a minor axis, and in a plan view, the minor axis of the connection via intersects with the connection metal.

Abstract: Provided herein are a multi-channel receiver optical sub-assembly and a manufacturing method thereof. The multi-channel receiver optical sub-assembly includes a PLC chip having a first side into which an optical signal is received and a second side from which the received signal is outputted, with an inclined surface formed on the second side of the PLC chip at a preset angle, a PD carrier bonded onto the PLC chip and made of a glass material, and an SI-PD bonded onto the PD carrier, a lens being integrated therein. The PLC chip, the PD carrier, and the SI-PD are passively aligned by at least one alignment mark and then are bonded.

Abstract: Provided herein are a multi-channel receiver optical sub-assembly and a manufacturing method thereof. The multi-channel receiver optical sub-assembly includes a PLC chip having a first side into which an optical signal is received and a second side from which the received signal is outputted, with an inclined surface formed on the second side of the PLC chip at a preset angle, a PD carrier bonded onto the PLC chip and made of a glass material, and an SI-PD bonded onto the PD carrier, a lens being integrated therein. The PLC chip, the PD carrier, and the SI-PD are passively aligned by at least one alignment mark and then are bonded.

Abstract: Provided herein are a multi-channel receiver optical sub-assembly and a manufacturing method thereof. The multi-channel receiver optical sub-assembly includes a PLC chip having a first side into which an optical signal is received and a second side from which the received signal is outputted, with an inclined surface formed on the second side of the PLC chip at a preset angle, a PD carrier bonded onto the PLC chip and made of a glass material, and an SI-PD bonded onto the PD carrier, a lens being integrated therein. The PLC chip, the PD carrier, and the SI-PD are passively aligned by at least one alignment mark and then are bonded.

Abstract: Provided herein is a semiconductor device including a substrate; an active layer formed on top of the substrate; a protective layer formed on top of the active layer and having a first aperture; a source electrode, driving gate electrode and drain electrode formed on top of the protective layer; and a first additional gate electrode formed on top of the first aperture, wherein an electric field is applied to the active layer, protective layer and driving gate electrode due to a voltage applied to each of the source electrode, drain electrode and driving gate electrode, and the first additional gate electrode is configured to attenuate a size of the electric field applied to at least a portion of the active layer, protective layer and driving gate electrode.

Abstract: Provided herein a laser radar apparatus including a plurality of light transmission and reception modules arranged concavely in an opposite direction to a scanning direction based on a surface vertical to the scanning direction, wherein each of the plurality of light transmission and reception modules comprises a transmitter configured to deflect a laser beam and to irradiate the deflected laser beam to a target; and a receiver configured to receive the laser beam reflected from the target.